IP Library Granted Patent US 7,247,735
Granted Patent B2
US 7,247,735 · App. 11/041,632 · Granted Jul 24, 2007

Octupolar molecules used as organic semiconductors

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Quick Facts
Patent No.
US 7,247,735
App. No.
11/041,632
Granted
Jul 24, 2007
Kind
B2
Abstract

In the case of the materials according to the invention, the charge carrier mobility in the correspondingly prepared films is achieved if the molecules are composed in such a way that side chains—consisting of conjugated aromatic or heteroaromatic systems—are attached in direct conjugation to a central aromatic or heteroaromatic ring so that the total molecule acquires an octupolar structure. This octupolar structure permits an effective π-π interaction of the molecules with one another in a manner such that stacking of a plurality of molecules along an imaginary axis (central ring) can take place and various stacks from among these stacks can interact with one another by intermeshing of the side chains. The electronic properties of the materials are determined both by the arrangement of the molecules in a layer and by the molecular design. The type of side chains and of the central ring which is electronically coupled to the side chains and ideally reinforces the effects in comparison with side chains considered in isolation is important for this purpose.

Claims (36)

1. An octupolar compound of the following general formula, the octupolar molecule being present in the form of stacks or molecular clusters:

in which X is CH;

in which Y is CH or N;

in which Z is O, S or N—R, in which R may be H, alkyl or aryl;

in which n is 2–6;

in which m is 0;

R 1 is n-alkyl, sec-alkyl, tert-alkyl, fluoroalkyl and/or perfluoroalkyl;

R 2 is H, halogen, n-alkyl, sec-alkyl, tert-alkyl, cycloalkyl, fluoroalkyl, perfluoroalkyl, aryl, fluoroaryl, perfluoroaryl, alkoxy, fluoroalkoxy, aryloxy, fluoroaryloxy, perfluoroalkoxy and/or perfluoroaryloxy;

R 3 is H, halogen, n-alkyl, sec-alkyl, tert-alkyl, cycloalkyl, fluoroalkyl, perfluoroalkyl, aryl, fluoroaryl, perfluoroaryl, alkoxy, fluoroalkoxy, aryloxy, fluoroaryloxy, perfluoroalkoxy and/or perfluoroaryloxy.

2. The compound as claimed in claim 1 , wherein n=3–6.

3. The compound as claimed in claim 1 , wherein Z is S.

4. The compound as claimed in claim 1 , wherein R1 is an n-alkyl, n-fluoroalkyl and/or n-perfluoroalkyl radical.

5. The compound as claimed in claim 4 , wherein R1 has 1–18 carbon atoms.

6. The compound as claimed in claim 1 , wherein R2 is an H, alkyl, fluoroalkyl and/or perfluoroalkyl radical.

7. The compound as claimed in claim 1 , wherein R2 is an n-alkyl, n-fluoroalkyl and/or n-perfluoroalkyl radical.

8. The compound as claimed in claim 1 , wherein R2 has 1–18 carbon atoms.

9. The compound as claimed in claim 1 , wherein the compound is selected from the group consisting of:

1,3,5-Tris[5-(5″-ethyl)-2,2′:5′,2″-terthiophenyl]benzene

1,3,5-Tris[5-(5′-hexyl)-2,2′-bithienyl]benzene

and 1,3,5-Tris[-(5′″-ethyl)-2,2′:5′,2″:5″,2′″-quartthiophenyl]benzene

10. A method for preparing an organic semiconductor, the method comprising:

(a) providing a plurality of octupolar compounds of the following general formula:

in which X is CH;

in which Y is CH or N;

in which Z is O, S or N—R, in which R may be H, alkyl or aryl;

in which n is 2–6;

in which m is 0;

R 1 is n-alkyl, sec-alkyl, tert-alkyl, fluoroalkyl and/or perfluoroalkyl;

R 2 is H, halogen, n-alkyl, sec-alkyl, tert-alkyl, cycloalkyl, fluoroalkyl, perfluoroalkyl, aryl, fluoroaryl, perfluoroaryl, alkoxy, fluoroalkoxy, aryloxy, fluoroaryloxy, perfluoroalkoxy, perfluoroaryloxy;

R 3 is H, halogen, n-alkyl, sec-alkyl, tert-alkyl, cycloalkyl, fluoroalkyl, perfluoroalkyl, aryl, fluoroaryl, perfluoroaryl, alkoxy, fluoroalkoxy, aryloxy, fluoroaryloxy, perfluoroalkoxy, perfluoroaryloxy; and

(b) arranging the octupolar compounds as stacks or molecular clusters, whereby an organic semiconductor is prepared.

11. The method of claim 10 , wherein the semiconductor is a p-semiconductor or an n-semiconductor.

12. The method of claim 10 , wherein the semiconductor is in a transistor.

13. The method of claim 12 , wherein the transistor is a in field effect transistor.

14. The compound as claimed in claim 5 , wherein R1 has 2–8 carbon atoms.

15. The compound of claim 8 , wherein R2 has 2–8 carbon atoms.

Assignments (5)
CORRECTIVE ASSIGNMENT TO CORRECT THE PATENT 7105729 PREVIOUSLY RECORDED AT REEL: 036827 FRAME: 0885. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Jul 26, 2017
From: INFINEON TECHNOLOGIES AG
To: POLARIS INNOVATIONS LIMITED
Reel/Frame 043336/0694 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 9, 2015
From: INFINEON TECHNOLOGIES AG
To: POLARIS INNOVATIONS LIMITED
Reel/Frame 036827/0885 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 8, 2015
From: QIMONDA AG
To: INFINEON TECHNOLOGIES AG
Reel/Frame 035623/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 12, 2010
From: INFINEON TECHNOLOGIES AG
To: QIMONDA AG
Reel/Frame 023768/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 21, 2005
From: HALIK, MARCUS; KLAUK, HAGEN; SCHMID, GUENTER
To: INFINEON TECHNOLOGIES AG
Reel/Frame 016131/0436 →