Memory cell, method for the production thereof and use of a composition therefor

1. A memory cell comprising:

a first electrode;

a second electrode; and

an active layer which is arranged between the first and the second electrode, the active layer comprising the following components:

a) a compound selected from the group consisting of

in which R 1 and R 4 , independently of one another, have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO 2 , in which R 1 and R 2 , R 2 and R 3 , R 3 and R 4 together may form a ring,

(b) a compound of the general formula II:

in which R 5 to R 7 , independently of one another, may have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —NH 2 , —N(alkyl) 2 , —N(aryl) 2 , —N(heteroaryl) 2 , —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO 2 , in which R 5 and R 6 or R 7 and R 8 together may form a ring.

2. The memory cell of claim 1 , wherein the ratio of the components (a) to the component (b) has a value of 5:1 to 1:5.

3. The memory cell of claim 1 , wherein the memory cell is applied to a substrate selected from the group consisting of silicon, germanium, gallium arsenide, gallium nitride, any desired compound of silicon, germanium or gallium, a polymer, ceramic, glass and metal.

4. The memory cell of claim 1 , wherein the thickness of the active material is between 20 and 2000 nm.

5. The memory cell of claim 4 , wherein the thickness of the active material is between 20 and 200 nm.

6. The memory cell of claim 1 , wherein the first or the second electrode consist of copper, aluminum, aluminum-copper, aluminum-silicon-copper, titanium, tantalum, tungsten, titanium nitride, TiW, TaW, WN, WCN or tantalum nitride and combinations thereof.

7. The memory cell of claim 1 , wherein the first and the second electrode consist of copper, aluminum, aluminum-copper, aluminum-silicon-copper, titanium, tantalum, tungsten, titanium nitride, TiW, TaW, WN, WCN or tantalum nitride and combinations thereof.

8. The memory cell of claim 1 , wherein the first electrode is rotated by 40° to 140°, relative to the second electrode.

9. The memory cell of claim 1 , wherein the first electrode is rotated by substantially 90°, relative to the second electrode.

10. A memory cell comprising:

a first electrode a second electrode; and

an active layer which is arranged between the first and the second electrode, the active layer comprising the following components:

a) a compound selected from the group consisting of

in which R 1 and R 4 , independently of one another, have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO 2 , in which R 1 and R 2 , R 2 and R 3 , R 3 and R 4 together may form a ring,

(b) a compound of the general formula II:

in which R 5 to R 7 , independently of one another, have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —NH 2 , —N(alkyl) 2 , —N(aryl) 2 , —N(heteroaryl) 2 , —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO 2 ,

in which R 5 and R 6 or R 7 and R 8 together may form a ring.

11. The memory cell of claim 10 , wherein the amount by weight of the polymer, based on the total amount of the active material, is in the range between 0 and 80 percent by weight.

12. The memory cell of claim 10 , wherein the polymer is a film-forming carrier material.

13. The memory cell of claim 10 , wherein the polymer is selected from the group consisting of polyether, polyether sulfones, polyacrylates, polyether sulfides, polyether ketones, polyquinolines, polyquinoxalines, polybenzoxazoles, polybenzimidazoles and polyimides.

14. A method for the production of a memory cell, comprising:

providing a substrate;

structuring a first electrode; and

depositing a layer containing the components

a) a compound selected from the group consisting of

in which R 1 and R 4 , independently of one another, have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO 2 , in which R 1 and R 2 , R 2 and R 3 and/or R 3 and R 4 together may form a ring,

and

(b) a compound of the general formula II:

in which R 5 to R 7 , independently of one another, have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —NH 2 , —N(alkyl) 2 , —N(aryl) 2 , —N(heteroaryl) 2 , —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO 2 ,

in which R 5 and R 6 or R 7 and R 8 together may form a ring;

depositing a second electrode onto the active material.

15. The method of claim 14 , wherein the deposition of components (a) and (b) is effected by means of vacuum vapor deposition.

16. The method of claim 14 , wherein deposition of the active material is effected by spin coating of a solution containing components (a), (b) and (c).

17. A method for the production of a memory cell, comprising:

providing a substrate;

structuring a first electrode; and

depositing a layer containing the components

a) a compound selected from the group consisting of

in which R 1 and R 4 , independently of one another, have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO 2 , in which R 1 and R 2 , R 2 and R 3 and/or R 3 and R 4 together may form a ring,

and

(b) a compound of the general formula II:

in which R 5 to R 7 , independently of one another, have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —NH 2 , —N(alkyl) 2 , —N(aryl) 2 , —N(heteroaryl) 2 , —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO 2 ,

in which R 5 and R 6 or R 7 and R 8 together may form a ring; and

(c) a polymer,

deposition of a second electrode onto the active material.

18. The method of claim 14 , wherein the deposition of components (a) and (b) is effected by means of vacuum vapor deposition.

19. The method of claim 14 , wherein deposition of the active material is effected by spin coating of a solution containing components (a), (b) and (c).

20. The use of a composition for the production of a semiconductor element, the composition comprising the following components:

a) a compound selected from the group consisting of

in which R 1 and R 4 , independently of one another, have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO 2 , in which R 1 and R 2 , R 2 and R 3 , R 3 and R 4 together may form a ring,

(b) a compound of the general formula II:

in which R 5 to R 7 , independently of one another, have the following meaning: —H, -alkyl, -aryl, -heteroaryl, —O-alkyl, —O-aryl, —O-heteroaryl, —NH 2 , —N(alkyl) 2 , —N(aryl) 2 , —N(heteroaryl) 2 , —SH, —S-alkyl, —S-aryl, —S-heteroaryl, —CO-alkyl, —CO-aryl, —CO-heteroaryl, —CS-alkyl, —CS-aryl, —CS-heteroaryl, -halogen, —CN and/or —NO 2 ,

in which R 5 and R 6 or R 7 and R 8 together may form a ring.

21. The use of the composition of claim 20 , the composition further comprising a polymer.