Process for producing a mask

1. A process for producing a mask, the process comprising:

providing layout data for a semiconductor layout;

fractionating the layout data to create control data for a pattern generator;

identifying slivers derived during the fractionating step;

calculating second control data from an enlarged imaging of the slivers;

carrying out a first exposure using the control data; and

carrying out a second exposure using the second data, the second exposure being carried out with a lower exposure dose as compared to the first exposure.

2. The process according to claim 1 , and further comprising transferring the control data and the second control data to the pattern generator, wherein the first exposure and the second exposure are carried out by the pattern generator.

3. The process according to claim 2 , wherein the first exposure and the second exposure are carried out using an electron beam.

4. The process according to claim 1 , wherein a critical sliver width a 1 is converted into an enlarged sliver width a 2 in the second control data with an enlargement factor n according to a 2 =n·a 1 and an exposure dose D 2 in the second exposure step is carried out reduced by an attenuation factor d where D 2 =d·D 1 with respect to an exposure dose D 1 in the first exposure step, where d=ƒ(n).

5. The process according to claim 4 , wherein the attenuation factor d=ƒ(n) is calculated from a linear function

d

=

1

x

·

n

,

where 1≦x≦2.

6. The process according to claim 5 , wherein the enlargement factor is

1

2

≤

n

≤

10.

7. The process according to claim 6 , wherein the enlargement factor is

2

3

≤

n

≤

3.

8. The process according to claim 4 , wherein the enlargement factor is

1

2

≤

n

≤

10.

9. The process according to claim 8 , wherein the enlargement factor is

2

3

≤

n

≤

3.

10. A process for manufacturing a semiconductor device, the process comprising:

providing layout data for a semiconductor layout;

fractionating the layout data to create first control data, the first control data representing shapes greater than a minimum size;

identifying slivers derived during the fractionating step, the slivers being shapes smaller than the minimum size;

calculating second control data by enlarged images of the slivers;

forming a pattern on a mask by carrying out a first exposure using the first control data and carrying out a second exposure using the second control data, the second exposure being carried out with a lower exposure dose as compared to the first exposure; and

producing a semiconductor component using the mask.

11. The process according to claim 10 , and further comprising transferring the control data and the second control data to the pattern generator, wherein the first exposure and the second exposure are carried out by the pattern generator.

12. The process according to claim 11 , wherein the first exposure and the second exposure are carried out using an electron beam.

13. The process according to claim 10 , wherein a critical sliver width a 1 is converted into an enlarged sliver width a 2 in the second control data with an enlargement factor n according to a 2 =n·a 1 and an exposure dose D 2 in the second exposure step is carried out reduced by an attenuation factor d where D 2 =d·D 1 with respect to an exposure dose D 1 in the first exposure step, where d=ƒ(n).

14. The process according to claim 13 , wherein the attenuation factor d=ƒ(n) is calculated from a linear function

d

=

1

x

·

n

,

where 1≦x≦2.

15. The process according to claim 14 , wherein the enlargement factor is

1

2

≤

n

≤

10.

16. The process according to claim 15 , wherein the enlargement factor is

2

3

≤

n

≤

3.

17. The process according to claim 13 , wherein the enlargement factor is

1

2

≤

n

≤

10.

18. The process according to claim 17 , wherein the enlargement factor is

2

3

≤

n

≤

3.

19. The process according to claim 10 , wherein the layout data represents one exposure plane of the semiconductor component.