Switching ratio and on-state resistance of an antifuse programmed below 5 mA and having a Ta or TaN barrier metal layer
View Patent ↗A metal-to-metal antifuse is disposed between two metal interconnect layers in an integrated circuit. An insulating layer is disposed above a lower metal interconnect layer. The insulating layer includes a via formed therethrough containing a tungsten plug in electrical contact with the lower metal interconnect layer. An antifuse material layer comprising amorphous carbon is disposed above the upper surface of the tungsten plug. The antifuse material layer is disposed between adhesion-promoting layers. A layer of a barrier metal, consisting of either tantalum or tantalum nitride, is disposed over the antifuse layer to form an upper electrode of the antifuse. An oxide or tungsten hard mask provides high etch selectivity and the possibility to etch barrier metals without affecting the dielectric constant value and mechanical properties of the antifuse.
1. A method for programming an antifuse comprising:
applying a first programming pulse of about 0.25 mA to about 0.5 mA to a first electrode of the antifuse, said antifuse comprising:
a tungsten plug disposed in a via in an insulating layer disposed above and in electrical contact with a lower metal interconnect layer forming a first electrode;
an antifuse layer disposed above an upper surface of said tungsten plug, said antifuse layer comprising a lower adhesion-promoting layer, a middle layer comprising amorphous carbon, and an upper adhesion-promoting layer; and
a layer of a barrier metal disposed over said antifuse layer forming a second electrode, said barrier metal comprising a material selected from a group consisting of at least one of tantalum and tantalum nitride; and
applying a second programming pulse of about 0.25 mA to about 0.5 mA to said second electrode of the antifuse.
2. The method of claim 1 , wherein said first programming pulse and said second programming pulse are each applied for about 10 μs.
3. The method of claim 1 , further comprising:
applying a first soaking pulse of about 2 mA to about 5 mA to said first electrode; and
applying a second soaking pulse of about 2 mA to about 5 mA to said second electrode; and
repeating applying said first soaking pulse and applying said second soaking pulse.
4. The method of claim 3 , wherein said first programming pulse and said second programming pulse are applied for about 10 μs, and said first soaking pulse and said second soaking pulse are applied for about 1 ms.
5. The method of claim 1 , wherein said applying said first programming pulse and said applying said second programming pulse are repeated at least four more times.
6. The method of claim 5 , wherein said first programming pulse and said second programming pulse are applied for about 1 ms.
7. The method of claim 5 , further comprising:
applying a first soaking pulse of about 2 mA to about 5 mA to said first electrode;
applying a second soaking pulse of about 2 mA to about 5 mA to said second electrode; and
repeating said applying said first soaking pulse and said applying said second soaking pulse.
8. The method of claim 7 , wherein said first programming pulse and said second programming pulse are applied for about 1 ms, and said first soaking pulse and said second soaking pulse are applied for about 1 ms.
9. A method for programming an antifuse comprising:
applying a first programming pulse of about 0.25 mA to about 0.5 mA to a first electrode of the antifuse, said antifuse comprising:
a tungsten plug disposed in a via in an insulating layer disposed above and in electrical contact with a lower metal interconnect layer;
a first layer of a barrier metal disposed above and in electrical contact with said tungsten plug forming a first electrode, said first layer of said barrier metal comprising a material selected from a group consisting of at least one of tantalum and tantalum nitride;
an antifuse layer disposed above an upper surface of said tungsten plug, said antifuse layer comprising a lower adhesion-promoting layer, a middle layer comprising amorphous carbon, and an upper adhesion-promoting layer;
a second layer of a barrier metal disposed over said antifuse layer forming a second electrode, said second layer of said barrier metal comprising a material selected from a group consisting of at least one of tantalum and tantalum nitride; and
a second insulating layer disposed over said first insulating layer, said antifuse layer, said first layer of said barrier metal, and said second layer of said barrier metal; and
applying a second programming pulse of about 0.25 mA to about 0.5 mA to said second electrode of the antifuse.
10. The method of claim 9 , wherein said first programming pulse and said second programming pulse are each applied for about 10 μs.
11. The method of claim 9 , further comprising:
applying a first soaking pulse of about 2 mA to about 5 mA to said first electrode;
applying a second soaking pulse of about 2 mA to about 5 mA to said second electrode; and
repeating applying said first soaking pulse and applying said second soaking pulse.
12. The method of claim 11 , wherein said first programming pulse and said second programming pulse are applied for about 10 μs, and said first soaking pulse and said second soaking pulse are applied for about 1 ms.
13. The method of claim 9 , wherein said applying said first programming pulse and said applying said second programming pulse are repeated at least four more times.
14. The method of claim 13 , wherein said first programming pulse and said second programming pulse are applied for about 1 ms.
15. The method of claim 13 , further comprising:
applying a first soaking pulse of about 2 mA to about 5 mA to said first electrode;
applying a second soaking pulse of about 2 mA to about 5 mA to said second electrode; and
repeating said applying said first soaking pulse and said applying said second soaking pulse.
16. The method of claim 15 , wherein said first programming pulse and said second programming pulse are applied for about 1 ms, and said first soaking pulse and said second soaking pulse are applied for about 1 ms.
17. A method for programming an antifuse comprising:
applying a first programming pulse of about 0.25 mA to about 0.5 mA to a first electrode of the antifuse, said antifuse comprising:
a first layer of a barrier metal disposed on a surface forming a first electrode, said first layer of said barrier metal comprising a material selected from a group consisting of at least one of tantalum and tantalum nitride;
an antifuse layer disposed on said first layer of said barrier metal comprising a lower adhesion-promoting layer, a middle layer comprising amorphous carbon, and an upper adhesion-promoting layer; and
a second layer of a barrier metal disposed over said antifuse layer forming a second electrode, said second layer of said barrier metal comprising a material selected from a group consisting of at least one of tantalum and tantalum nitride; and
applying a second programming pulse of about 0.25 mA to about 0.5 mA to said second electrode of the antifuse.
18. The method of claim 17 , wherein said first programming pulse and said second programming pulse are each applied for about 10 μs.
19. The method of claim 17 , further comprising:
applying a first soaking pulse of about 2 mA to about 5 mA to said first electrode;
applying a second soaking pulse of about 2 mA to about 5 mA to said second electrode; and
repeating applying said first soaking pulse and applying said second soaking pulse.
20. The method of claim 19 , wherein said first programming pulse and said second programming pulse are applied for about 10 μs, and said first soaking pulse and said second soaking pulse are applied for about 1 ms.
21. The method of claim 17 , wherein said applying said first programming pulse and said applying said second programming pulse are repeated at least four more times.
22. The method of claim 21 , wherein said first programming pulse and said second programming pulse are applied for about 1 ms.
23. The method of claim 21 , further comprising:
applying a first soaking pulse of about 2 mA to about 5 mA to said first electrode;
applying a second soaking pulse of about 2 mA to about 5 mA to said second electrode; and
repeating said applying said first soaking pulse and said applying said second soaking pulse.
24. The method of claim 23 , wherein said first programming pulse and said second programming pulse are applied for about 1 ms, and said first soaking pulse and said second soaking pulse are applied for about 1 ms.
25. A method for programming an antifuse comprising:
applying a first low current programming pulse to a first electrode of the antifuse, said antifuse comprising:
a tungsten plug disposed in a via in an insulating layer disposed above and in electrical contact with a lower metal interconnect layer;
a first layer of a barrier metal disposed above and in electrical contact with said tungsten plug forming a first electrode, said first layer of said barrier metal comprising a material selected from a group consisting of at least one of tantalum and tantalum nitride;
an antifuse layer disposed above an upper surface of said tungsten plug, said antifuse layer comprising a lower adhesion-promoting layer, a middle layer comprising amorphous carbon, and an upper adhesion-promoting layer;
a second layer of a barrier metal disposed over said antifuse layer forming a second electrode, said second layer of said barrier metal comprising a material selected from a group consisting of at least one of tantalum and tantalum nitride; and
a second insulating layer disposed over said first insulating layer, said antifuse layer, said first layer of said barrier metal, and said second layer of said barrier metal;
applying a second low current programming pulse to said second electrode;
applying a first high current soaking pulse to said first electrode; and
applying a second high current soaking pulse to said second electrode.
26. A method for programming an antifuse comprising:
applying a first low current programming pulse to a first electrode of the antifuse, said antifuse comprising:
a tungsten plug disposed in a via in an insulating layer disposed above and in electrical contact with a lower metal interconnect layer;
a first layer of a barrier metal disposed above and in electrical contact with said tungsten plug forming a first electrode, said first layer of said barrier metal comprising a material selected from a group consisting of at least one of tantalum and tantalum nitride;
an antifuse layer disposed above an upper surface of said tungsten plug, said antifuse layer comprising a lower adhesion-promoting layer, a middle layer comprising amorphous carbon, and an upper adhesion-promoting layer;
a second layer of a barrier metal disposed over said antifuse layer forming a second electrode, said second layer of said barrier metal comprising a material selected from a group consisting of at least one of tantalum and tantalum nitride; and
a second insulating layer disposed over said first insulating layer, said antifuse layer, said first layer of said barrier metal, and said second layer of said barrier metal;
applying a second low current programming pulse to said second electrode;
applying a first high current soaking pulse to said first electrode; and
applying a second high current soaking pulse to said second electrode.
27. A method for programming an antifuse comprising:
applying a first low current programming pulse to a first electrode of the antifuse, said antifuse comprising:
a first layer of a barrier metal disposed on a surface forming a first electrode, said first layer of said barrier metal comprising a material selected from a group consisting of at least one of tantalum and tantalum nitride;
an antifuse layer disposed on said first layer of said barrier metal comprising a lower adhesion-promoting layer, a middle layer comprising amorphous carbon, and an upper adhesion-promoting layer; and
a second layer of a barrier metal disposed over said antifuse layer forming a second electrode, said second layer of said barrier metal comprising a material selected from a group consisting of at least one of tantalum and tantalum nitride;
applying a second low current programming pulse to said second electrode;
applying a first high current soaking pulse to said first electrode; and
applying a second high current soaking pulse to said second electrode.