Integrated semiconductor circuit and method for testing the same
View Patent ↗Integrated semiconductor circuits, in particular, dynamic random access memories include a multiplicity of generator circuits for generating internal voltage levels from an externally applied supply voltage. During testing, the internal voltage levels are altered by the output voltage generated at the output of the generator circuit being adapted to an externally applied test voltage. If the test voltage is outside a tolerance range, the semiconductor circuit maybe destroyed. A protection circuit connected in parallel with the generator circuit limits the output voltage.
1. A method for testing a multiplicity of integrated semiconductor circuits, the method comprising:
a) providing the multiplicity of integrated semiconductor circuits, each integrated semiconductor circuit having a generator circuit and a protection circuit and an automatic test machine;
b) connecting the multiplicity of integrated semiconductor circuits to the automatic test machine;
c) predefining a value of the reference voltage for the multiplicity of semiconductor circuits by the automatic test machine;
d) generating an output voltage dependent on the value of the reference voltage by a generator circuit of the multiplicity of semiconductor circuits;
e) switching a current path contained in the protection circuit to the conducting state, if the output voltage exceeds a predetermined threshold value to limit the output voltage of the generator circuit;
f) measuring a power consumption of the semiconductor circuits;
g) predefining a smaller-magnitude value of the reference voltage and repeating steps d) to f), if the measured power consumption is greater than a predefined threshold value; and
h) conducting a functional test for the multiplicity of semiconductor circuits.
2. The method as claimed in claim 1 , wherein the functional test is conducted repeatedly at different ambient temperatures.
3. The method as claimed in claim 1 , wherein an automatic test machine has a multiplicity of outputs and generates, at a respective one of the outputs, a test voltage predefined by a test program.
4. The method as claimed in claim 3 , wherein connecting the multiplicity of semiconductor circuits to the automatic test machine includes connecting the terminal for predefining the value of the reference voltage to one of the multiplicity of outputs of the automatic test machine.
5. The method as claimed in claim 4 , wherein the terminals for predefining the value of the reference voltage are connected to a common output of the automatic test machine.
6. The method as claimed in claim 4 , wherein switching the current path to the conducting state includes activating a switching element of the protection circuit connected between the output and the reference terminal.
7. The method as claimed in claim 1 , wherein the automatic test machine has a multiplicity of inputs and varies the value of a test voltage generated at one of the outputs in a manner dependent on the test program and the value of a measurement voltage present at one of the inputs.
8. The method as claimed in claim 6 , the method further comprising:
connecting a current measuring device to one of the outputs of the automatic test machine by a first terminal, the current measuring device being connected to each of the multiplicity of integrated semiconductor circuits by a second terminal, the current measuring being connected to one of the inputs of the automatic test machine by a third terminal, the current measuring device generating a measurement voltage dependent on a current flowing between the first terminal and the second terminal at the third terminal.
9. The method as claimed in claim 7 , wherein generating an output voltage corresponding to the predefined voltage value includes comparing a value of the output voltage with the predefined voltage value, whereby a comparison result is determined, and tracking the output voltage in a manner dependent on the comparison result.