Granted Patent B1

US 7,285,499 · App. 11/127,175 · Granted Oct 23, 2007

Abstract

Claims (39)

1. A method comprising:

forming a first material layer on a semiconductor device;

forming a photoresist layer;

patterning the photoresist layer to form at least two masks;

forming polymer spacers on adjacent side surfaces of the at least two masks using a series of intermittent sputter deposition and etch processes; and

etching the first material layer using the at least two masks and the polymer spacers to create at least one sub-lithographic space in the first material layer.

2. The method of claim 1 wherein the first material layer includes a hard mask layer.

3. The method of claim 2 further comprising:

using the etched hard mask layer to etch a second material layer beneath the hard mask layer.

4. The method of claim 2 wherein the hard mask layer comprises at least one of amorphous carbon or a low-k dielectric material, and

wherein the forming the hard mask layer includes:

forming the hard mask layer to a thickness ranging from about 100 Å to about 2,000 Å.

5. The method of claim 1 wherein the first material layer includes an antireflective coating, a polycrystalline silicon material, or a dielectric material.

6. The method of claim 1 wherein forming polymer spacers includes:

forming the polymer spacers to a height ranging from about 100 Å to about 1,000 Å and a width ranging from about 50 Å to about 1,000 Å.

7. The method of claim 1 wherein forming polymer spacers includes:

performing the series of intermittent sputter deposition and etch processes in a same etch chamber.

8. The method of claim 1 wherein the series of intermittent sputter deposition and etch processes is performed at a temperature below 100° C.

9. The method of claim 1 wherein forming polymer spacers includes:

using a first chemistry for depositing the polymer material, the first chemistry including at least one of CH 2 F 2 , CH 3 F, C 4 F 6 , or C 4 F 8 .

10. The method of claim 1 wherein a width of the sub-lithographic space ranges from about 50 Å to about 1,000 Å.

11. A method comprising:

forming a plurality of first structures on a semiconductor device;

forming spacers adjacent side surfaces of each of the plurality of first structures using a series of intermittent sputter deposition and etch processes to form a plurality of second structures; and

using the plurality of second structures to form at least one sub-lithographic opening in a material layer located below the plurality of second structures.

12. The method of claim 11 wherein the plurality of first structures comprises photoresist masks.

13. The method of claim 11 wherein the series of intermittent sputter deposition and etch processes is performed at a temperature below 100° C.

14. The method of claim 11 wherein forming spacers includes:

depositing a spacer material on the semiconductor device in an etch chamber using a first chemistry, and

etching the spacer material in the etch chamber to form the spacers using a second chemistry.

15. The method of claim 11 wherein the using includes:

using the plurality of second structures as a mask, and

etching the material layer located below the plurality of second structures to form the at least one sub-lithographic opening to a width ranging from about 50 Å to about 1,000 Å.

16. A method for forming an opening in a semiconductor device, the method comprising:

forming a plurality of first structures on a semiconductor device;

forming spacers adjacent side surfaces of each of the plurality of first structures using a series of intermittent sputter deposition and etch processes to form a plurality of second structures; and

using the plurality of second structures as a mask to form the opening in a material layer located below the plurality of second structures, the opening being formed to a width less than approximately 100 nm.

17. The method of claim 16 wherein the

series of intermittent sputter deposition and etch processes is performed in a same etch chamber.

Assignments (13)