Memory device with multistage sense amplifier
View Patent ↗A memory device with a multistage sense amplifier is disclosed. According to one aspect, a memory device has a memory cell array having at least one memory cell, at least one sense amplifier. Binary data signals read out from the memory cell are amplified and evaluated. The binary data signals can also be written back to the corresponding memory cell. Furthermore, an output unit for outputting the amplified and evaluated binary data signals and a coupling device between the memory cell array and the sense amplifier are provided. The coupling device has a preamplifier unit for preamplifying the data signals read out and a bridging unit for bridging the preamplifier unit in order to provide a writing back of the binary data signals to the memory cell of the memory cell array.
1. Memory device for storing binary data signals, having:
a) a memory cell array having at least one memory cell which can be addressed via word lines and bit lines, it being possible to store the binary data signals in the form of electrical charges;
b) at least one sense amplifier, by means of which the stored binary data signals can be read out from the at least one memory cell, the binary data signals read out subsequently being amplified and evaluated by means of the sense amplifier and also being able to be written back to the corresponding memory cell;
c) an output unit for outputting the amplified and evaluated binary data signals, wherein
d) the memory device for storing binary data signals further has a coupling device connected between the memory cell array and the sense amplifier, which coupling device comprises:
d1) at least one preamplifier unit for preamplifying the data signals read out from the at least one memory cell of the memory cell array and for outputting the preamplified data signals to the sense amplifier; and
d2) a bridging unit for bridging the preamplifier unit in order to provide a writing-back of the binary data signals to the corresponding memory cells of the memory cell array, wherein the bridging unit has at least one multiplexing unit, which can be activated with a write signal and which is provided separately for each data line.
2. Device according to claim 1 , wherein the at least one sense amplifier and the at least one preamplifier unit are provided as a multistage amplifier device.
3. Device according to claim 1 , wherein the preamplifier unit is designed as a multistage amplifier.
4. Method for storing and reading out binary data signals in and from a memory cell array comprising memory cells, having the following steps of:
a) addressing at least one memory cell of the memory cell array via word lines and bit lines;
b) storing the binary data signals in the form of electrical charges in the at least one addressed memory cell of the memory cell array;
c) reading out the stored binary data signals from at least one memory cell addressed for the read-out via at least one data line by means of a sense amplifier;
d) amplifying the data signals read out by means of the sense amplifier; and
e) outputting the amplified binary data signals by means of an output unit, wherein the method further has the following steps of:
f) preamplifying, prior to step d) of amplifying the binary data signals read out by means of the sense amplifier, the binary data signals read out from the at least one memory cell of the memory cell array, and outputting the preamplified binary data signals to the sense amplifier by means of a preamplifier unit provided in a coupling device connected between the memory cell array and the sense amplifier; and
g) bridging, if the binary data signals are intended to be written back to the memory cell, the preamplifier unit by means of a bridging unit provided in the coupling device connected between the memory cell array and the sense amplifier, wherein
g1) at least one multiplexing unit is provided in the bridging unit, which multiplexing unit is activated with a write signal;
g2) each data line is switched through by means of a separate multiplexing unit; and
g3) a bridging of the preamplifier unit in order to provide a rewriting of the binary data signals to the memory cells of the memory cell array is carried out by means of the bridging unit in a manner dependent on the write signal fed to the bridging unit.
5. Method according to claim 4 , wherein the data signals read out are evaluated in the sense amplifier prior to step e) of outputting the amplified binary data signals by means of the output unit.
6. Method according to claim 4 , wherein the binary data signals read out from the at least one addressed memory cell by means of the sense amplifier are no longer written back to the corresponding memory cell of the memory cell array after read-out.
7. Method according to claim 6 , wherein the binary data signals stored in the at least one addressed memory cell of the sense amplifier are provided only for a single read-out.
8. Method according to claim 4 , wherein without a bridging of the preamplifier unit by means of the bridging unit provided in the coupling device connected between the memory cell array and the sense amplifier, a writing back of the binary data signals from the sense amplifier to the corresponding memory cells of the memory cell array is prevented.