Fabrication and use of polished silicon micro-mirrors

1. A method comprising:

etching from opposite sides of a silicon wafer having a polished surface on at least one of the opposite sides, wherein etching the wafer forms silicon bars each having a parallelogram-shaped cross-section and including a portion of the polished surface;

separating the silicon bars to form discrete micro mirrors; and

mounting at least one of the separated silicon bars on a mounting surface.

2. The method of claim 1 wherein the etching includes simultaneously etching grooves from opposite sides of the silicon wafer to form the silicon bars.

3. The method of claim 1 wherein separating the silicon bars includes dicing the silicon wafer.

4. The method of claim 1 wherein the etching forms silicon bars having a non-rectangular parallelogram-shaped cross-section.

5. The method of claim 4 wherein the angle between the polished surface of the silicon bar and the mounting surface is between 90° and 180°.

6. The method of claim 4 wherein the angle between the polished surface of the silicon bar and the mounting surface is approximately 135°.

7. The method of claim 4 wherein the etching exposes a surface in the wafer, and wherein the at least one silicon bar is mounted with the exposed surface facing the mounting surface.

8. The method of claim 4 including using the polished surface of the silicon bar mounted on the mounting surface to reflect an optical signal.

9. The method of claim 4 including using the silicon bar mounted on the mounting surface as a micro-mirror.

10. The method of claim 4 including incorporating the silicon bar into an optical sub-assembly.

11. The method of claim 4 including incorporating the silicon bar into a Transmitter Optical Sub-Assembly device.

12. The method of claim 4 including incorporating the silicon bar into an assembly having an edge emitter laser for emitting an optical beam toward a polished surface of the silicon bar, wherein the optical beam is redirected by about ninety degrees upon reflection by the polished surface of the silicon bar.

13. The method of claim 4 wherein the etching includes performing an anisotropic etch.

14. The method of claim 13 wherein the etching includes using KOH as an etchant.

15. The method of claim 13 wherein the etching includes simultaneously etching from the opposite sides of the silicon wafer.

16. The method of claim 13 wherein the polished surface of the wafer is parallel to the wafer's <100> planes.

17. A method comprising:

etching from opposite sides of a silicon wafer having a polished surface on at least one of the opposite sides and subsequently dicing the wafer to form discrete silicon bars each having a parallelogram-shaped cross-section and including a portion of the polished surface, wherein the etching includes simultaneously etching grooves in opposite sides of the wafer, wherein each of a pair of grooves in opposite sides of the wafer are slightly offset from one another so that, as the etching proceeds, the two grooves are merged together to form sides of the silicon bars; and

mounting at least one of the silicon bars on a mounting surface.

18. A method comprising:

etching from opposite sides of a silicon wafer having a polished surface on at least one of the opposite sides, wherein etching the wafer forms silicon bars each having a parallelogram-shaped cross-section and including a portion of the polished surface, wherein the etching includes etching V-grooves with their longitudinal axis parallel to the wafer's <110> planes;

separating the silicon bars from one another; and

mounting at least one of the silicon bars on a mounting surface.