Method of fabricating conductive lines with silicide layer
View Patent ↗A method of fabricating conductive lines is described. A substrate having a polysilicon layer thereon is provided. A mask layer having an opening that exposes the polysilicon layer is formed on the polysilicon layer. Then, spacers are formed on the sidewalls of the mask layer. Using the mask layer and the spacers as a mask, a portion of the polysilicon layer is removed until the substrate is exposed. After that, an insulating layer that completely fills the opening is formed over the substrate. The insulating layer has an etching selectivity different from the mask layer. Thereafter, the mask layer is removed to expose the polysilicon layer and then a metal silicide layer is formed on the upper surface of the polysilicon layer.
1. A method of fabricating conductive lines, comprising:
providing a substrate having a polysilicon layer thereon;
forming a mask layer on the polysilicon layer, wherein the mask layer has an opening that exposes a portion of the polysilicon layer;
forming spacers on the sidewalls of the opening and above the polysilicon layer;
removing a portion of the polysilicon layer using the spacers and the mask layer as a mask;
forming an insulating layer over the substrate to fill the opening, wherein the insulating layer has an etching selectivity different from the mask layer;
removing the mask layer, and the spacers not being removed so as to expose a portion of the polysilicon layer not covered by the spacers; and
forming a silicide layer on the exposed portion of the polysilicon layer.
2. The method of claim 1 , wherein the step of forming a silicide layer on the upper surface of the polysilicon layer comprises:
forming a metallic layer over the substrate;
performing an annealing process so that a portion of the metallic layer reacts with silicon to form the suicide layer; and
removing the metallic layer not participated in the reaction.
3. The method of claim 2 , wherein the material constituting the metallic layer comprises a refractory metal.
4. The method of claim 3 , wherein the material constituting the metallic layer is selected from a group consisting of cobalt, nickel, tungsten and titanium.
5. The method of claim 1 , wherein the material constituting the insulating layer comprises silicon nitride and the material constituting the mask layer comprises silicon oxide.
6. The method of claim 1 , wherein the material constituting the insulating layer comprises silicon oxide and the material constituting the mask layer comprises silicon nitride.
7. The method of claim 1 , wherein the step of forming the insulating layer over the substrate to fill the opening comprises:
forming an insulating material layer over the substrate; and
removing the insulating material layer outside the opening using the mask layer as a stop layer.
8. The method of claim 7 , wherein the step of removing the insulating material layer outside the opening using the mask layer as a stop layer comprises performing a chemical/mechanical polishing operation.
9. The method of claim 1 , wherein the spacers and the mask layer are fabricated using materials having different etching selectivity.