IP Library Granted Patent US 7,294,920
Granted Patent B2
US 7,294,920 · App. 11/186,840 · Granted Nov 13, 2007

Wafer-leveled chip packaging structure and method thereof

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Quick Facts
Patent No.
US 7,294,920
App. No.
11/186,840
Granted
Nov 13, 2007
Kind
B2
Abstract

This invention relates to a wafer-leveled chip packaging method, comprising the steps of: providing a wafer; attaching at least one first chip to the wafer; forming a first insulating layer on the wafer; forming a plurality of first conductive vias penetrating the first insulating layer, wherein parts of the first conductive vias are electrically connected with the first chip; forming a conductive pattern layer on the surface of the first insulating layer wherein the conductive pattern layer is electrically connected with the first conductive vias; forming a plurality of through holes penetrating the wafer; filling a second insulating layer in the through holes; and forming a plurality of second conductive vias in the second insulating layer, wherein the second conductive vias are electrically connected with the first conductive vias.

Claims (10)

1. A wafer-leveled chip package structure, comprising:

a wafer having a first surface, on which an integrated circuit pattern and a plurality of pads are formed, and a plurality of through holes penetrating said wafer;

a plurality of first chips each having at least one pad on said first surface of said wafer, wherein said pads being mounted on the surface of said first chip which is opposed to said wafer;

a first insulating layer formed on said first surface of said wafer, having a plurality of first conductive vias penetrating said first insulating layer, wherein said first insulating layer covers said first chips and said integrated circuit pattern of said wafer; and

a conductive pattern layer formed on a surface opposed to said wafer of said first insulating layer, and said conductive pattern layer is electrically connected with said first conductive vias;

wherein a second insulating layer is filled in said through holes and at least one second conducting via passes through said second insulating layer, parts of said first conductive vias are connected with said pads of said wafer, parts of said first conductive vias are connected with said pads of said first chips and part of said first conductive vias are connected with said second conductive vias in said through holes.

2. The wafer-leveled chip package structure of claim 1 , further comprising a third insulating layer having a pattern formed on a surface of said first conductive pattern layer which is opposed to said first insulating layer, wherein said third insulating layer protects said first conductive pattern layer.

3. The wafer-leveled chip package structure of claim 2 , further comprising a plurality of solder balls or needle pins formed in said third insulating layer, wherein said solder balls or needle pins are electrically connected with said first conductive pattern layer.

4. The wafer-leveled chip package structure of claim 2 , further comprising a plurality of second chips each having at least one pad on said third insulating layer, wherein said pad is disposed on the surface of said second chip which is opposed to the said third insulating layer.

5. The wafer-leveled chip package structure of claim 1 , further comprising a plurality of solder balls or needle pins soldered to said second conductive vias.

Assignments (9)
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS CORPORATION
To: INVENSAS LLC
Reel/Frame 073941/0814 →
CHANGE OF NAME Recorded Nov 24, 2025
From: INVENSAS LLC
To: ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
Reel/Frame 073508/0745 →
RELEASE OF SECURITY INTEREST Recorded Jun 11, 2020
From: ROYAL BANK OF CANADA
To: TESSERA, INC.; INVENSAS BONDING TECHNOLOGIES, INC. (F/K/A ZIPTRONIX, INC.); FOTONATION CORPORATION (F/K/A DIGITALOPTICS CORPORATION AND F/K/A DIGITALOPTICS CORPORATION MEMS); INVENSAS CORPORATION; TESSERA ADVANCED TECHNOLOGIES, INC; DTS, INC.; DTS LLC; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
Reel/Frame 052920/0001 →
SECURITY INTEREST Recorded Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.; VEVEO, INC.; INVENSAS CORPORATION; INVENSAS BONDING TECHNOLOGIES, INC.; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
SECURITY INTEREST Recorded Dec 2, 2016
From: INVENSAS CORPORATION; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; ZIPTRONIX, INC.; DIGITALOPTICS CORPORATION; DIGITALOPTICS CORPORATION MEMS; DTS, LLC; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: ROYAL BANK OF CANADA, AS COLLATERAL AGENT
Reel/Frame 040797/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT ADDRESS OF RECEIVING PARTY PREVIOUSLY RECORDED ON REEL 028708, FRAME 0649. Recorded Aug 22, 2012
From: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
To: INVENSAS CORPORATION
Reel/Frame 028832/0560 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 1, 2012
From: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
To: INVENSAS CORPORATION
Reel/Frame 028708/0649 →
CORRECTIVE COVERSHEET TO CORRECT INVENTOR CHING-WEN HSIAO GIVEN NAME FROM CHIN TO CHLNG PREVIOUSLY RECORDED ON REEL 016808, FRAME 0467. Recorded Oct 5, 2007
From: CHEN, SHOU-LUNG; HSIAO, CHING-WEN; CHEN, YU-HUA; KO, JENG-DAR; TZENG, CHIH-MING; LIN, JYH-RONG; YU, SHAN-PU
To: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Reel/Frame 019981/0244 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 22, 2005
From: CHEN, SHOU-LUNG; HSIAO, CHIN-WEN; CHEN, YU-HUA; KO, JENG-DAR; TZENG, CHIH-MING; LIN, JYH-RONG; YU, SHAN-PU
To: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Reel/Frame 016808/0467 →