Roughened high refractive index layer/LED for high light extraction
View Patent ↗A light emitting diode (LED) includes a p-type layer of material, an n-type layer of material and an active layer between the p-type layer and the n-type layer. A roughened layer of transparent material is adjacent one of the p-type layer of material and the n-type layer of material. The roughened layer of transparent material has a refractive index close to or substantially the same as the refractive index of the material adjacent the layer of transparent material, and may be a transparent oxide material or a transparent conducting material. An additional layer of conductive material may be between the roughened layer and the n-type or p-type layer.
1. A vertical light emitting diode (LED), said LED comprising:
a plurality of semiconductor layers, comprising:
a p-type layer of material;
an n-type layer of material; and
an active layer between the p-type layer and the n-type layer;
a roughened layer of transparent oxide material comprising a flat bottom surface adjacent to said plurality of semiconductor layers, wherein said roughened layer of transparent oxide material has a refractive index of within approximately ±0.3 of the refractive index of said plurality of semiconductor layers, said roughened layer of transparent oxide material arranged on a primary emission surface of said LED;
a cavity within said roughened layer of transparent oxide material;
a first contact disposed within said cavity and surrounded by said roughened layer of transparent oxide material, wherein said first contact and said flat bottom surface of said roughened layer are in direct contact and planar with one end of said plurality of semiconductor layers; and
a second contact in electrical contact with the opposite end of said plurality of semiconductor layers;
wherein the roughened layer of transparent oxide material comprises at least one of ZnO, MgO, In 2 O 3 , PbO, ZnSnO, NiO and indium tin oxide (ITO); and
wherein the roughened layer of transparent oxide material comprises a roughened layer of transparent conducting oxide material.
2. The LED of claim 1 wherein the roughened layer of transparent oxide material is adjacent the n-type layer of material.
3. The LED of claim 2 wherein said first contact is a n-type contact.
4. The LED of claim 1 wherein the roughened layer of transparent conducting oxide material comprises at least one of ZnO, In 2 O 3 and indium tin oxide (ITO).
5. The LED of claim 1 wherein the roughened layer of transparent oxide material is adjacent the p-type layer of material.
6. The LED of claim 5 wherein said first contact is a p-type contact.
7. A vertical geometry light emitting diode (LED), said LED comprising:
a plurality of semiconductor layers, comprising:
a first layer of doped semiconductor material;
a second layer of doped semiconductor material;
an active layer sandwiched between said first and second layers of doped semiconductor material;
a first contact on and in direct contact with one of said first and second layers of doped semiconductor material; and
a second contact on the other of said first and second layers of doped semiconductor material, wherein said first and second contacts are on opposite sides of said plurality of semiconductor layers; and
a separate roughened layer of transparent oxide material comprising a flat bottom surface adjacent and planar with one of the plurality of semiconductor layers, wherein said roughened layer of transparent oxide material has a refractive index of within approximately ±0.3 of the refractive index of the adjacent one of the plurality of semiconductor layers, said roughened layer of transparent oxide material arranged on a primary emission surface of said LED,
wherein said first contact is surrounded by said roughened layer of transparent oxide material;
wherein the roughened layer of transparent oxide material comprises at least one of ZnO, MgO, In 2 O 3 , PbO, ZnSnO, NiO and indium tin oxide (ITO); and
wherein the roughened layer of transparent oxide material comprises a roughened layer of transparent conducting oxide material.
8. A vertical light emitting diode (LED), said LED comprising:
a plurality of semiconductor layers, comprising:
a first layer of doped semiconductor material comprising a planar surface;
a second layer of doped semiconductor material also comprising a planar surface;
an active layer sandwiched between said first and second layers of doped semiconductor material;
a separate roughened layer of transparent oxide material comprising a flat bottom surface on and in direct contact with the planar surface of one of said first and second layers of doped semiconductor material, said roughened layer of transparent oxide material comprising an index of refraction ±0.3 of said plurality of semiconductor layers; and
a first contact in direct contact with one of said semiconductor layers and surrounded by said roughened layer of transparent oxide material;
wherein the roughened layer of transparent oxide material comprises at least one of ZnO, MgO, In 2 O 3 , PbO, ZnSnO, NiO and indium tin oxide (ITO); and
wherein the roughened layer of transparent oxide material comprises a roughened layer of transparent conducting oxide material.
9. The LED of claim 8 further comprising said first contact in electrical contact with said first layer of doped semiconductor material and a second contact in electrical contact with said second layer of doped semiconductor material on a side of said LED opposite from said first contact, wherein said LED has vertical geometry with said first and second contacts on opposite sides of said plurality of semiconductor layers.
10. A vertical light emitting diode (LED), said LED comprising:
a plurality of semiconductor layers, comprising:
a p-type layer of material;
an n-type layer of material; and
an active layer between the p-type layer and the n-type layer;
a roughened layer comprising indium tin oxide (ITO) and further comprising a flat bottom surface adjacent and planar with a primary emission surface of said LED, wherein said roughened layer of ITO has a refractive index within approximately ±0.3 of the refractive index of said p-type layer;
a cavity within said roughened layer of ITO, a first contact disposed within said cavity, wherein said first contact and said roughened layer of ITO are in direct contact with said p-type layer, and a second contact in electrical contact with the said n-type layer; and
wherein the roughened layer comprises a transparent and conductive roughened layer.
11. A vertical light emitting diode (LED), said LED comprising:
a plurality of semiconductor layers, comprising:
a p-type layer of material;
an unroughened n-type layer of material; and
an active layer between the p-type layer and the re-type layer;
a roughened layer comprising indium tin oxide (ITO) and further comprising a flat bottom surface adjacent and planar with a primary emission surface of said LED, wherein said roughened layer of ITO has a refractive index of within approximately ±0.3 of the refractive index of said n-type layer; and
a cavity within said roughened layer of ITO, a first contact disposed within said cavity, wherein said first contact and said roughened layer of ITO are in direct contact with said n-type layer, and a second contact in electrical contact with the said p-type layer;
wherein the roughened layer comprises a transparent and conductive layer.