Clocked standby mode with maximum clock frequency

1. A method for controlling a voltage generator for a memory device comprising:

providing a first clock signal and a second clock signal;

selectively enabling the voltage generator in conjunction with the first clock signal when a period of the first clock signal is less than a period of the second clock signal; and

selectively enabling the voltage generator in conjunction with the second clock signal when the period of the second clock signal is less than the period of the first clock signal.

2. The method of claim 1 , wherein either a rising edge of the first clock signal or a rising edge of the second clock signal enables the generator.

3. The method of claim 1 , wherein the period of the second clock signal is chosen such that the voltage output by the generator does not fall below a threshold level while the generator is disabled.

4. The method of claim 1 , wherein a period of the first clock signal and a period of the second clock signal are binary multiples of each other.

5. The method of claim 1 , wherein the first clock signal is generated in conjunction with an access to one or more locations of the memory device.

6. A memory device comprising:

a voltage generation circuit configured to generate an output voltage;

a control circuit configured to selectively enable the voltage generation circuit by:

receiving a first clock signal and a second dock signal;

selectively enabling the voltage generation circuit in conjunction with the first clock signal when a period of the first clock signal is less than a period of the second clock signal; and

selectively enabling the voltage generation circuit in conjunction with the second clock signal when the period of the second clock signal is less than the period of the first clock signal.

7. The memory device of claim 6 , wherein either a rising edge of the first clock signal or a rising edge of the second clock signal enables the voltage generation circuit.

8. The memory device of claim 6 , wherein the period of the second clock signal is chosen such that the voltage output by the voltage generation circuit does not fall below a threshold level while the voltage generation circuit is disabled.

9. The memory device of claim 6 , wherein a period of the first clock signal and a period of the second clock signal are binary multiples of each other.

10. The memory device of claim 6 , wherein the first clock signal is generated in conjunction with an access to one or more locations of the memory device.

11. A method for controlling a clocked standby mode of a memory device comprising:

providing a first clock signal and a signal clock signal;

determining whether a period of the first clock signal is less than or equal to a period of the second clock signal;

if the period of the first clock signal is less than or equal to the period of the second clock signal, generating a docked standby mode control signal based on the first clock signal;

if the period of the first clock signal is not less than or equal to the period of the second clock signal, generating the clocked standby mode control signal based on the second clock signal.

12. The method of claim 11 , where the clocked standby mode control signal selectively enables and disables a voltage generation circuit.

13. The method of claim 11 , wherein the period of the second clock signal is chosen such that a voltage output by the voltage generation circuit does not fall below a threshold level while the voltage generation circuit is disabled.

14. The method of claim 11 , wherein the clocked standby mode control signal is a clock signal, and wherein generating the clocked standby mode control signal based on a selected clock signal comprises detecting a rising edge of the selected clock signal and generating a pulse for the clocked standby mode control signal.

15. The method of claim 14 , wherein the pulse is a low logic value, and wherein the pulse enables a circuit of the memory device.

16. An apparatus comprising:

a circuit;

a control circuit configured to generate a clocked standby mode control signal for selectively enabling the circuit by:

receiving a first clock signal and a second clock signal;

determining whether a period of the fist clock signal is less then or equal to a period of the second clock signal;

if the period of the first clock signal is less than or equal to the period of the second clock signal, generating a clocked standby mode control signal based on the first clock signal;

if the period of the first clock signal is not less than or equal to the period of the second clock signal, generating the clocked standby mode control signal based on the second clock signal.

17. The apparatus of claim 16 , wherein the clocked standby mode control signal is a clock signal, and wherein generating the clocked standby mode control signal based on a selected clock signal comprises detecting a rising edge of the selected clock signal and generating a pulse for the clocked standby mode control signal.

18. The apparatus of claim 17 , wherein the pulse is a low logic value, and wherein the pulse enables the circuit.

19. A memory device comprising:

A means for generating a voltage;

a means for selectively enabling the means for generating by:

receiving a first clock signal and a second clock signal;

selectively enabling the means for generating in conjunction with the first clock signal when a period of the first clock signal is less than a period of the second clock signal; and

selectively enabling the means for generating in conjunction with the second clock signal when the period of the second clock signal is less than the period of the first clock signal.