IP Library Granted Patent US 7,622,313
Granted Patent B2
US 7,622,313 · App. 11/193,926 · Granted Nov 24, 2009

Fabrication of three dimensional integrated circuit employing multiple die panels

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Quick Facts
Patent No.
US 7,622,313
App. No.
11/193,926
Granted
Nov 24, 2009
Kind
B2
Abstract

A method of assembling an electronic device includes testing a first wafer of first die to identify the location of functional first die and dividing the first wafer into a set of panels, wherein a panel includes an M×N array of first die. A panel is bonded to a panel site of a second wafer to form a panel stack wherein a panel site defines an M×N array of second die in the second wafer. The panel stack is sawed into a devices comprising a first die bonded to a second die. Dividing the first wafer into panels may be done according statically or dynamically (to maximize the number of panels having a yield exceeding a specified threshold). Binning of the panels and panel sites according to functional die patterns may be performed to preferentially bond panels to panel sites of the same bin.

Claims (32)

1. A method of assembling of an electronic device, comprising:

testing a first wafer comprising a plurality of first sets of dies to identify the location of functional first sets of dies within the first wafer;

dividing the first wafer into a plurality of first sets of multiple-die panels, wherein each panel includes an M×N array of the first die wherein each panel of the first set of multiple-die panels includes a plurality of first sets of dies;

categorizing the plurality of first sets of multiple-die panels into a first plurality of bins based on a predetermined yield pattern associated with the first wafer;

bonding the first set of multiple-die panels to panel sites of a second wafer to form a panel stack, wherein the panel sites include an M×N array of second sets of dies, wherein bonding includes testing and categorizing the panel sites of the second wafer into a second plurality of bins based on the predetermined yield pattern associated with the first wafer and wherein the bonding step further includes bonding the first set of multiple-die panels to the panel sites of the second wafer selectively to minimize functional mismatches; and

sawing the panel stack into a set of electronic devices, each electronic device comprising a first die bonded to a second die.

2. The method of claim 1 , wherein dividing the first wafer comprises dividing the first wafer according to a static mapping of panels in the first wafer.

3. The method of claim 1 , wherein dividing the first wafer comprises dividing the first wafer to maximize the number of panels having a panel yield exceeding a specified threshold wherein a panel yield indicates the number of functional first die in a panel.

4. The method of claim 1 wherein each bin is associated with a corresponding pattern of functional die within the panel.

5. The method of claim 1 , wherein the first die and the second die share a common dimension and wherein the M×N array includes at least three die in at least one of the array dimensions.

6. The method of claim 1 , wherein the M ×N array is selected from a group of arrays consisting of a 2×1 array and a 2×2 array and wherein the first die and the second die are of different dimensions.

7. The method of claim 1 , wherein the first wafer and the second wafer are of different dimensions.

8. The method of claim 1 , wherein the second die is a processor die and the first die is a memory die.

9. A method of assembling of an electronic device, comprising:

dividing a first wafer having a plurality of die into a set of multiple-die panels, wherein a panel includes an M×N array of a first sets of dies, wherein each panel of the set of multiple-die panels includes a plurality of the die from the first wafer;

testing a second wafer comprising a plurality of second sets of dies to identify the location of functional second sets of dies within the second wafer;

determining panel sites of the second wafer, wherein the panel sites include an M×N array of second sets of dies, wherein determining the panel sites of the second wafer comprises selecting panel sites to maximize the number of panel sites having a panel site yield exceeding a specified threshold wherein a panel site yield indicates the number of functional second sets of dies in a panel site;

binning the panel sites of the second wafer into one of multiple bins, wherein each bin is associated with a corresponding pattern of functional second die within the panel site;

bonding a panel to a panel site of a second wafer to form a panel stack; and

sawing the panel stack into a set of electronic devices, each electronic device comprising a first die bonded to a second die.

10. The method of claim 9 , wherein the first die and the second die share a common dimension and wherein the M ×N array includes at least three die in at least one of the array dimensions.

11. The method of claim 9 , wherein the M×N array is selected from a group of arrays consisting of a 2×1 array and a 2×2 array and wherein the first die and the second die are of different dimensions.

12. The method of claim 9 , wherein the first wafer and the second wafer are of different dimensions.

13. The method of claim 9 , wherein the second die is a processor die and the first die is a memory die.

14. A method of assembling an electronic device, comprising:

sawing a first wafer having a plurality of first sets of dies into a panel comprising an M×N array of first die, wherein either M or N is greater than 1, wherein each panel includes a plurality of first sets of dies;

forming a panel site by bonding the panel to a panel site of a second wafer having a plurality of second sets of dies, wherein the panel site encompasses an M×N array of the second sets of dies;

testing the first wafer to identify functional first sets of dies and testing the second wafer to identify functional second sets of dies;

selecting a panel and a corresponding panel site for bonding based upon a matching pattern of functional die in the panel and the panel site; and

sawing the panel site into a device comprising a first sets of dies from the panel bonded to a second sets of dies from the panel site.

15. The method of claim 14 , further comprising testing the first wafer to identify functional first die and discarding a panel if a percentage of functional first die is less than a specified threshold.

16. The method of claim 14 , further comprising testing the second wafer to identify functional second die and eliminating a panel site if a percentage of functional second is less than a specified threshold.

Assignments (32)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042985 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042762 FRAME 0145. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051145/0184 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051030/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0387 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050745/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042762/0145 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042985/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE LISTED CHANGE OF NAME SHOULD BE MERGER AND CHANGE PREVIOUSLY RECORDED AT REEL: 040652 FRAME: 0180. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Jan 12, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
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CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 040652/0180 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12092129 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Jul 14, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039361/0212 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
SECURITY AGREEMENT SUPPLEMENT Recorded Mar 7, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
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To: MORGAN STANLEY SENIOR FUNDING, INC.
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ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
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PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
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PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
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PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
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SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
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SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
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SECURITY AGREEMENT Recorded May 13, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 024397/0001 →
SECURITY AGREEMENT Recorded Mar 15, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A.
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SECURITY AGREEMENT Recorded Feb 2, 2007
From: FREESCALE SEMICONDUCTOR, INC.; FREESCALE ACQUISITION CORPORATION; FREESCALE ACQUISITION HOLDINGS CORP.; FREESCALE HOLDINGS (BERMUDA) III, LTD.
To: CITIBANK, N.A. AS COLLATERAL AGENT
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ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 29, 2005
From: JONES, ROBERT E.; POZDER, SCOTT K.
To: FREESCALE SEMICONDUCTOR, INC.
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