IP Library Granted Patent US 7,304,378
Granted Patent B2
US 7,304,378 · App. 11/208,246 · Granted Dec 4, 2007

Aluminum/ceramic bonding substrate

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,304,378
App. No.
11/208,246
Granted
Dec 4, 2007
Kind
B2
Abstract

There is provided an aluminum/ceramic bonding substrate having a high reliability to high-temperature heat cycles. An aluminum member of an aluminum alloy having a Vickers hardness of 35 to 45 is bonded to a ceramic substrate having a flexural strength of 500 to 600 MPa in three-point bending. The ceramic substrate is made of high-strength aluminum nitride, silicon nitride, alumina containing zirconia, or high-purity alumina. The aluminum alloy is an aluminum alloy containing silicon and boron, or an aluminum alloy containing copper.

Claims (15)

1. An aluminum/ceramic bonding substrate comprising:

a ceramic substrate having a flexural strength of 450 MPa or more in three-point bending; and

an aluminum member bonded to said ceramic substrate, said aluminum member having a Vickers hardness of 32 to 49,

wherein said aluminum member is made of an aluminum alloy containing contains 0.6 to 3.0 wt % of silicon and 0.01 to 1.0 wt % of boron.

2. An aluminum/ceramic bonding substrate as set forth in claim 1 , wherein said Vickers hardness of said aluminum member is in the range of from 35 to 45.

3. An aluminum/ceramic bonding substrate as set forth in claim 1 , wherein said flexural strength of said ceramic substrate is 470 MPa or more.

4. An aluminum/ceramic bonding substrate as set forth in claim 1 , wherein said flexural strength of said ceramic substrate is 500 MPa or more.

5. An aluminum/ceramic bonding substrate as set forth in claim 1 , wherein said aluminum alloy contains 1.0 to 2.0 wt % of silicon and 0.03 to 0.05 wt % of boron.

6. An aluminum/ceramic bonding substrate as set forth in claim 1 , wherein said ceramic substrate is made of a ceramic selected from the group consisting of aluminum nitride, silicon nitride, alumina containing zirconia, and high-purity alumina.

7. An aluminum/ceramic bonding substrate as set forth in claim 1 , wherein said aluminum member directly contacts said ceramic substrate to be bonded thereto.

8. An aluminum/ceramic bonding substrate as set forth in claim 1 , wherein said aluminum member is bonded to said ceramic substrate via a brazing material.

9. An aluminum/ceramic bonding substrate as set forth in claim 1 , which is used as a circuit board for mounting thereon a semiconductor chip.

10. An aluminum/ceramic bonding substrate as set forth in claim 9 , wherein said semiconductor chip is made of SiC, AlGaN or GaN.

11. An aluminum/ceramic bonding substrate as set forth in claim 1 , which is used as a circuit board for an inverter or converter.

12. An aluminum/ceramic bonding substrate as set forth in claim 1 , which is used as a circuit board for automotive parts.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 11, 2008
From: DOWA HOLDINGS CO., LTD.
To: DOWA METALTECH CO., LTD.
Reel/Frame 020354/0632 →
CHANGE OF NAME Recorded Nov 5, 2007
From: DOWA MINING CO., LTD.
To: DOWA HOLDINGS CO., LTD.
Reel/Frame 020121/0161 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 19, 2005
From: OSANAI, HIDEYO
To: DOWA MINING CO., LTD.
Reel/Frame 016910/0698 →