High-reliable semiconductor device using hermetic sealing of electrodes
View Patent ↗The present invention relates to a high-reliable semiconductor device in which electrodes formed on substrates are prevented from deteriorating by sealing the electrodes with a frame member rather than a sealing material. The frame member in the present invention surrounds electrodes formed on the substrates. The inside of the frame member is vacuous or filled with a gas which does not react with the electrodes such as an inert gas and, thereby, the electrodes are prevented from deteriorating by attacks of oxygen or moisture.
1. A semiconductor device which comprises
a first substrate on which one or more electrodes are formed, a second substrate on which one or more electrodes are formed, and a frame member,
wherein each of the one or more electrodes formed on the first substrate and each of the one or more electrodes correspondingly formed on the second substrate are electrically connected;
wherein the frame member surrounds the electrodes formed on the first and the second substrates to hermetically seal these electrodes;
the first and the second substrates are bonded via the frame member; and
wherein electrical connections between each of the one or more electrodes formed on the first substrate and each of the one or more electrodes correspondingly formed on the second substrate are achieved by contacting those electrodes without bonding these electrodes.
2. The semiconductor device according to claim 1 , wherein the inside of the frame member is vacuous.
3. The semiconductor according to claim 1 , wherein the frame member encloses either of a nitrogen gas, an inert gas or a mixture thereof.
4. The semiconductor device according to claim 1 , wherein the frame member is removably bonded to at least one of the first substrate and the second substrates.
5. The semiconductor device according to claim 4 , wherein the frame member is bonded to at least one of the first and the second substrates with solder.
6. The semiconductor device according to claim 1 , wherein surfaces of the electrodes formed on the first and the second substrates are cleaned.
7. The semiconductor device according to claim 1 , wherein each of the one or more electrodes formed on the first substrate and each of the one or more electrodes correspondingly formed on the second substrate are electrically connected via elastic bumps.
8. The semiconductor device according to claim 7 , wherein a spring constant of the elastic bumps is 1000 N/in or lower.
9. The semiconductor device of claim 7 , wherein a first elastic bump on a first electrode on the first substrate is electrically connected to a second electrode on the second substrate, and wherein a height H 1 of the combination of the first bump and first electrode on the first substrate is greater than a height H 2 of a frame member on the first substrate, so that the first bump is compressed when electrically connected to the second electrode.
10. The semiconductor device according to claim 1 , wherein each of the electrodes formed on the first substrate and each of the electrodes correspondingly formed on the second substrate are electrically connected via a bumpless connection.