IP Library Granted Patent US 7,534,162
Granted Patent B2
US 7,534,162 · App. 11/221,375 · Granted May 19, 2009

Grooved platen with channels or pathway to ambient air

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Quick Facts
Patent No.
US 7,534,162
App. No.
11/221,375
Granted
May 19, 2009
Kind
B2
Abstract

A polish pad ( 120 ) and platen ( 130 ) assembly for use in chemical mechanical polishing of semiconductor devices includes a platen ( 130 ) having a grooved or channeled surface ( 136 ) which is sealed from the processing environment by an ungrooved portion ( 131 ) at the periphery of the platen ( 130 ). In addition, the platen ( 130 ) includes one or more passageways ( 132 ) that provide a pathway to ambient or sub-ambient environment. The combination of the sealing region ( 131 ) and the passageway(s) ( 132 ) prevent liquids, vapors or other undesirable contaminants from infiltrating between the pad and platen, and also vent trapped air pockets between the pad and platen.

Claims (22)

1. A method for performing chemical mechanical polishing, comprising;

assembling a polishing pad assembly by applying a polishing pad to an upper surface of a platen having a groove pattern by applying an air permeable porous material inside the groove pattern, where the groove pattern does not extend to any peripheral edge of the upper surface of the platen and is vented to an external environment; and

performing chemical mechanical polishing of a wafer structure by placing the polishing pad assembly in polishing contact with the wafer structure.

2. The method of claim 1 , where assembling a polishing pad assembly comprises sealing a peripheral edge of the polishing pad to the peripheral edge of the upper surface of the platen to prevent contaminants from the chemical mechanical polishing from infiltrating between the platen and the polishing pad.

3. The method of claim 1 , further comprising forming at least one passageway in the platen to connect the groove pattern with the external environment, such that air trapped between the platen and the polishing pad is able to vent through the passageway without allowing contaminants from the chemical mechanical polishing to infiltrate between the platen and the polishing pad.

4. The method of claim 3 , where the passageway is formed with an air permeable hydrophobic material that releases air without letting contaminants from the chemical mechanical polishing to enter in between the polishing pad and platen.

5. The method of claim 1 , further comprising forming the groove pattern in the platen by machining grooves into the platen.

6. The method of claim 1 , further comprising forming the groove pattern in the platen by molding, casting or machining the platen.

7. The method of claim 1 , where assembling a polishing pad assembly comprises:

adhesively affixing the polishing pad to the upper surface of the platen; and

venting any air trapped between the platen and the polishing pad through the groove pattern and a passageway formed in the platen without allowing contaminants from the chemical mechanical polishing to infiltrate between the platen and the polishing pad.

8. A method for performing chemical mechanical polishing, comprising;

assembling a polishing pad assembly by applying a polishing pad to an upper surface of a platen having a groove pattern which does not extend to any peripheral edge of the upper surface of the platen and which is vented to an external environment;

forming at least one passageway in the platen with an air permeable hydrophobic material to connect the groove pattern with the external environment, such that air trapped between the platen and the polishing pad is able to vent through the air permeable hydrophobic material in the passageway without allowing contaminants from the chemical mechanical polishing to infiltrate between the platen and the polishing pad; and

performing chemical mechanical polishing of a wafer structure by placing the polishing pad assembly in polishing contact with the wafer structure.

9. The method of claim 8 , where assembling a polishing pad assembly comprises sealing a peripheral edge of the polishing pad to the peripheral edge of the upper surface of the platen to prevent contaminants from the chemical mechanical polishing from infiltrating between the platen and the polishing pad.

10. The method of claim 8 , further comprising forming the groove pattern in the platen by machining grooves into the platen.

11. The method of claim 8 , further comprising forming the groove pattern in the platen by molding, casting or machining the platen.

12. The method of claim 8 , where assembling a polishing pad assembly comprises:

adhesively affixing the polishing pad to the upper surface of the platen; and

venting any air trapped between the platen and the polishing pad through the groove pattern and a passageway formed in the platen without allowing contaminants from the chemical mechanical polishing to infiltrate between the platen and the polishing pad.

13. The method of claim 8 , further comprising applying an air permeable porous material inside the groove pattern.

Assignments (22)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 17, 2018
From: NXP USA, INC.
To: VLSI TECHNOLOGY LLC
Reel/Frame 045084/0184 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE LISTED CHANGE OF NAME SHOULD BE MERGER AND CHANGE PREVIOUSLY RECORDED AT REEL: 040652 FRAME: 0180. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Jan 12, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 041354/0148 →
CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 040652/0180 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037518/0292 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037354/0225 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037354/0823 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0143 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0553 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →
SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030633/0424 →
SECURITY AGREEMENT Recorded May 13, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 024397/0001 →
SECURITY AGREEMENT Recorded Sep 23, 2009
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A.
Reel/Frame 023273/0099 →