Integrated circuit and method for reading from resistance memory cells
View Patent ↗A method and apparatus for reading from a memory arrangement, in particular, for reading from a CBRAM or another memory arrangement based on resistively switching memory cells includes charging a bit line to a voltage value, discharging the bit line by a cell resistance, and subsequently assessing a resulting voltage difference in a measuring device, in particular, a differential sense amplifier.
1. A method for reading from a memory arrangement including at least one memory cell in which a resistance value between two poles of the memory cell reflects a memory state of the memory cell, the method comprising:
connecting one of the two poles to a charge source with a first potential;
connecting the other of the two poles to a conductor having a second potential, which lies below the potential of the charge source; and
measuring the potential of the conductor, further comprising:
determining a positive threshold voltage that when applied to the two poles of the memory cell, as seen statistically, causes a resistance change that characterizes a change in the memory state of the memory cell; and
determining a negative threshold voltage that when applied to the two poles of the memory cell, as seen statistically, causes a resistance change that characterizes a change in the memory state of the memory cell,
wherein the first and second potentials are selected such that the magnitude of their difference does not exceed the sum formed from the magnitude of the positive threshold voltage and the magnitude of the negative threshold voltage.
2. The method as claimed in claim 1 , wherein the first and second potentials are selected such that the magnitude of their difference is less than ⅔ and greater than ⅓.
3. The method as claimed in claim 1 , wherein the first and second potentials are selected such that the magnitude of their difference is equal to ½ of the sum formed from the magnitude of the positive threshold voltage and the magnitude of the negative threshold voltage.
4. A method for reading from a memory arrangement including at least one memory cell in which a resistance value between two poles of the memory cell reflects a memory cell, the method comprising:
connecting one of the two poles to a charge source with a first potential;
connecting the other of the two poles to a conductor having a second potential, which lies below the potential of the charge source; and
measuring the potential of the conductor, wherein the potential of the conductor is measured by a two-pole differential amplifier, one pole of the two-pole differential amplifier being connected to the conductor and the other pole of the two-pole differential amplifier being held at a third potential between the first and second potentials.
5. A method for reading from a memory arrangement including at least one memory cell in which a resistance value between two poles of the memory cell relfects a memory state of the memory cell, the method comprising:
connecting one of the two poles to a charge source with a first potential;
connecting the other of the two poles to conductor having a second potential, which lies below the potential of the charge source; and
measuring the potential of the conductor, wherein said method further comprises:
determining the magnitude of a harmful current that when the flow of the harmful current via the two poles of the memory cell, as seen statistically, causes a resistance change that characterizes a change in the memory state of the memory cell,
wherein the current flow of the current source or sink is restricted to a value less than below the magnitude of the harmful current.
6. A method for reading from a memory arrangement including at least one memory cell in which a resistance value between two poles of the memory cell reflects a memory state of the memory cell, the method comprising:
connecting one of the two poles to a charge source with a first potential;
connecting the other of the two poles to a conductor having a second potential, which lies below the potential of the charge source; and
measuring the potential of the conductor, wherein said method further comprises:
determining the magnitude of a destructive current that when the flow of the destructive current via the two poles of the memory cell, as seen statistically, causes permanent damage to the memory cell,
wherein the current flow of the current source or sink is restricted to a value less than the magnitude of the destructive current.
7. A method reading from a memory arrangement including at least one memory cell in which a resistance value between two poles of the memory cell reflects a memory state of the memory cell, the method comprising:
connecting one of the two poles to a charge source with a first potential;
connecting the other of the two poles to a conductor having a second potential, which lies below the potential of the charge source; and
measuring the potential of the conductor, wherein said method further comprises:
ascertaining a presumable memory state of the memory cell based on a measurement result of the measurement, the measurement being effected after a predetermined time after the other of the two poles has been brought to the second potential by connection to the conductor.
8. A method for reading from a memory arrangement including at least one memory cell in which a resistance value between two poles of the memory cell reflects a memory state of the memory cell, the method comprising:
connecting one of the two poles to a charge source with a first potential;
connecting the other of the two poles to a conductor having a second potential, which lies below the potential of the charge source; and
measuring the potential of the conductor, wherein said method further comprises:
connecting the conductor to a measuring device; and
releasing the connection of the conductor to the measuring device directly prior to measuring.
9. A method for reading from a memory arrangement including at least one memory cell in which a resistance value between two poles of the memory cell reflects a memory state of the memory cell, the method comprising:
connecting one of the two poles to a charge sink with a first potential;
connecting the other of the two poles to a conductor having a second potential, which lies above the potential of the charge sink; and
measuring the potential of the conductor, wherein said method further comprises;
determining a positive threshold voltage that when applied to the two poles of the memory cell, as seen statistically, causes a resistance change that characterizes a change in the memory state of the memory cell; and
determining a negative threshold voltage that when applied to the two poles of the memory cell, as seen statistically, causes a resistance change that characterizes a change in the memory state of the memory cell,
wherein the first and second potentials are selected such that the magnitude of their difference does not exceed the sum formed from the magnitude of the positive threshold voltage and the magnitude of the negative threshold voltage.
10. The method as claimed in claim 9 , wherein the first and second potentials are selected such that the magnitude of their difference is less than ⅔ and greater than ⅓.
11. The method as claimed in claim 9 , wherein the first and second potentials are selected such that the magnitude of their difference is equal to ½ of the sum formed from the magnitude of the positive threshold voltage and the magnitude of the negative threshold voltage.
12. A method for reading from a memory arrangement including at least one memory cell in which a resistance value between two poles of the memory cell reflects a memory state of the memory cell, the method comprising:
connecting one of the two poles to a charge sink with a first potential;
connecting the other of the two poles to a conductor having a second potential, which lies above the potential of the charge sink; and
measuring the potential of the conductor, wherein the potential of the conductor is measured by a two-pole differential amplifier, one pole of the two-pole differential amplifier being connected to the conductor and the other pole of the two-pole differential amplifier being held at a third potential between the first and second potentials.
13. A method for reading from a memory arrangement including at least one memory cell in which a resistance value between two poles of the memory cell reflects a memory state of the memory cell, the method comprising:
connecting one of the two poles to a charge sink with a first potential;
connecting the other of the two poles to a conductor having a second potential, which lies above the potential of the charge sink; and
measuring the potential of the conductor, wherein said method further comprises:
determining the magnitude of a harmful current that when the flow of the harmful current via the two poles of the memory cell, as seen statistically, causes a resistance change that characterizes a change in the memory state of the memory cell,
wherein the current flow of the current source or sink is restricted to a value less than below the magnitude of the harmful current.
14. A method for reading from a memory arrangement including least one memory cell in which a resistance value between two poles of the memory cell reflects a memory state of the memory cell, the method comprising:
connecting one of the two poles to a charge sink with a first potential;
connecting the other of the two poles to a conductor having a second potential, which lies above the potential of the charge sink; and
measuring the potential of the conductor, wherein said method further comprises:
determining the magnitude of a destructive current that when the flow of the destructive current via the two poles of the memory cell, as seen statistically, causes permanent damage to the memory cell,
wherein the current flow of the current source or sink is restricted to a value less than the magnitude of the destructive current.
15. A method for reading from a memory arrangement including at least one memory cell in which a resistance value between two poles of the memory cell reflects a memory state of the memory cell, the method comprising;
connecting one of the two poles to a charge sink with a first potential;
connecting the other of the two poles to a conductor having a second potential, which lies above the potential of the charge sink; and
measuring the potential of the conductor, wherein said method further comprises:
ascertaining a presumable memory state of the memory cell based on a measurement result of the measurement, the measurement being effected after a predetermined time after the other of the two poles has been brought to the second potential by connection to the conductor.
16. A method for reading from a memory arrangement including at least one memory cell in which a resistance value between two poles of the memory cell reflects a memory state of the memory cell, the method comprising:
connecting one of the two poles to a charge sink with a first potential;
connecting the other of the two poles to a conductor having a second potential, which lies above the potential of the charge sink; and
measuring the potential of the conductor, wherein said method further comprises:
connecting the conductor to a measuring device; and
releasing the connection of the conductor to the measuring device directly prior to measuring.
17. An intergrated circuit for reading from a memory arrangement including at least one memory cell in which a resistance value between two poles of the memory cell reflects a memory state of the memory cell, the intergrated circuit comprising:
a charge source with a first potential for connecting to one of the two poles;
a conductor having a second potential, which lies below the potential of the charge source, for connecting to the other of the two poles; and
a measuring device for measuring the potential of the conductor, wherein said intergrated circuit further comprises:
a capacitive coupling device that brings the conductor to the second potential by a voltage pulse.
18. An intergrated circuit for reading from a memory arrangement including at least one memory cell in which a resistance value between two poles of the memory cell reflects a memory state of the memory cell, the integrated circuit comprising:
a charge source with a first potential for connecting to one of the two poles;
a conductor having a second potential, which lies below the potential of the charge source, for connecting to the other of the two poles; and
a measuring device for measuring the potential of the conductor, wherein:
the first and second potentials are selected such that the magnitude of their difference does not exceed the sum formed from the magnitude of a predetermined positive threshold voltage and the magnitude of a predetermined negative threshold voltage,
the positive threshold voltage is a positive voltage that when applied to the two poles of the memory cell, as seen statistically, causes a resistance change that characterizes a change in the memory state of the memory cell, and
the negative threshold voltage is a negative voltage that when applied to the two poles of the memory cell, as seen statistically, causes a resistance change that characterizes a change in the memory state of the memory cell.
19. An intergrated circuit for reading from a memory arrangement including at least one memory cell in which a resistance value between two poles of the memory cell reflects a memory state of the memory cell, the intergrated circuit comprising;
a charge source with a first potential for connecting to one of the two poles;
a conductor having a second potential, which lies below the potential of the charge source, for connecting to the other of the two poles; and
a measuring device for measuring the potential of the conductor, wherein said intergrated circuit further comprises:
a two-pole differential amplifier for measuring the potential of the conductor,
wherein one pole of the differential amplifier is connected to the conductor, and the other pole of the differential amplifier is held at a third potential between the first and second potentials.
20. An intergrated circuit for reading from a memory arrangement including at least one memory cell in which a resistance value between two poles of the memory cell reflects a memory state of the memory cell, the intergrated circuit comprising;
a charge source with a first potential for connecting to one of the two poles;
a conductor having a second potential, which lies below the potential of the charge source, for connecting to the other of the two pole; and
a measuring device for measuring the potential of the conductor, wherein said intergrated circuit further comprises:
a device that restricts the current flow of the current source or sink to a value less than a predetermined magnitude of a harmful current,
wherein the harmful current is a current of a magnitude that its flow via the two poles of the memory cell, as seen statistically, causes a resistance change that characterizes a change in the memory state of the memory cell.
21. An intergrated circuit for reading from a memory arrangement including at least one memory cell in which a resistance value between two poles of the memory cell relfects a memory state of the memory cell, the intergrated circuit comprising:
a charge source with a first potential for connecting to one of the two poles;
a conductor having a second potential, which lies below the potential of the charge source, for connecting to the other of the two poles; and
a measuring device for measuring the potential of the conductor, wherein said intergrated circuit further comprises:
a device that restricts the current flow of the current source or sink to a value less than a predetermined magnitude of a destructive current,
wherein the destructive current is a current of a magnitude that its flow via the two poles of the memory cell, as seen statistically, causes a permanent damage to the memory cell.
22. An intergrated circuit for reading from a memory arrangement including at least one memory cell in which a resistance value between two poles of the memory cell reflects a memory state of the memory cell, the intergrated circuit comprising:
a charge source with a first potential for connecting to one of the two poles;
a conductor having a second potential, which lies below the potential of the charge source, for connecting to the other of the two poles; and
a measuring device for measuring the potential of the conductor, wherein said intergrated circuit further comprises:
a device for determining a presumable memory state of the memory cell based on a measurement result of the measurement,
wherein the measuring device measures after a predetermined time after the other of the two poles has been brought to the second potential by connection to the conductor.
23. An apparatus for reading from a memory arrangement including at least one memory cell in which a resistance value between two poles of the memory cell reflects a memory state of the memory cell, the apparatus comprising:
a charge sink with a first potential for connecting to one of the two poles;
a conductor having a second potential, which lies above the potential of the charge sink, for connecting to the other of the two poles; and
a measuring device for measuring the potential of the conductor, wherein said apparatus further comprises:
a capacitive coupling device that brings the conductor to the second potential by a voltage pulse.
24. An apparatus for reading from a memory arrangement including at least one memory cell in which a resistance value between two poles of the memory cell reflects a memory state of the memory cell, the apparatus comprising:
a charge sink with a first potential for connecting to one of the two poles;
a conductor having a second potential, which lies above the potential of the charge sink, for connecting to the other of the two poles; and
a measuring device for measuring the potential of the conductor, wherein
the first and second potentials is selected such that the magnitude of their difference does not exceed the sum formed from the magnitude of a predetermined positive threshold voltage and the magnitude of a predetermined negative threshold voltage,
the positive threshold voltage is a positive voltage that when applied to the two poles of the memory cell, as seen statistically, causes a resistance change that characterizes a change in the memory state of the memory cell, and
the negative threshold voltage is a negative voltage that when applied to the two poles of the memory cell, as seen statistically, causes a resistance change that characterizes a change in the memory state of the memory cell.
25. An apparatus for reading from a memory arrangement including at least one memory cell in which a resistance value between two poles of the memory cell reflects a memory state of the memory cell, the apparatus comprising:
a charge sink with a first potential for connecting to one of the two poles;
a conductor having a second potential, which lies above the potential of the charge sink, for connecting to the other of the two poles; and
a measuring device for measuring the potential of the conductor, wherein said apparatus further comprises:
a two-pole differential amplifier for measuring the potential of the conductor,
wherein one pole of the differential amplifier is connected to the conductor, and the other pole of the differential amplifier is held at a third potential between the first and second potentials.
26. The apparatus as claimed in claim 25 , wherein the resistance value of the memory cell reflects a memory state that changes by applying a voltage to the two poles of the memory cell.
27. An apparatus for reading from a memory arrangement including at least one memory cell in which a resistance value between two poles of the memory cell reflects a memory state of the memory cell, the apparatus comprising:
a charge sink with a first potential for connecting to one of the two poles;
a conductor having a second potential, which lies above the potential of the charge sink, for connecting to the other of the two poles; and
a measuring device for measuring the potential of the conductor, wherein said apparatus further comprises:
a device that restricts the current flow of the current source or sink to a value less than a predetermined magnitude of a harmful current,
wherein the harmful current is a current of a magnitude that its flow via the two poles of the memory cell, as seen statistically, causes a resistance change that characterizes a change in the memory state of the memory cell.
28. An apparatus for reading from a memory arrangement including at least one memory cell in which a resistance value between two poles of the memory cell reflects a memory state of the memory cell, the apparatus comprising:
a charge sink with a first potential for connecting to one of the two poles;
a conductor having a second potential, which lies above the potential of the charge sink, for connecting to the other of the two poles; and
a measuring device for measuring the potential of the conductor, wherein said apparatus further comprises:
a device that restricts the current flow of the current source or sink to a value less than a predetermined magnitude of a destructive current,
wherein the destructive current is a current of a magnitude that its flow via the two poles of the memory cell, as seen statistically, causes a permanent damage to the memory cell.
29. An apparatus for reading from a memory arrangement including at least one memory cell in which a resistance value between two poles of the memory cell reflects a memory state of the memory cell, the apparatus comprising:
a charge sink with a first potential for connecting to one of the two poles;
a conductor having a second potential, which lies above the potential of the charge sink, for connecting to the other of the two poles; and
a measuring device for measuring the potential of the conductor, wherein said apparatus further comprises:
a device for determining a presumable memory state of the memory cell based on a measurement result of the measurement,
wherein the measuring device measures after a predetermined time after the other of the two poles has been brought to the second potential by connection to the conductor.