Defectivity and process control of electroless deposition in microelectronics applications
View Patent ↗Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.
1. A method for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices, the method comprising:
contacting the substrate with an electroless deposition composition comprising (a) a grain refiner comprising a grain refiner compound selected from the group consisting of a polyphosphoric acid, a polyphosphate salt, and a combination thereof wherein said grain refiner compound is a compound having a formula M (n+2) P n O (3n+1) or (MPO 3 ) n , where M represents a counter ion, and n=3 to 600; and (b) a source of deposition ions selected from the group consisting of Co ions and Ni ions.
2. The method of claim 1 wherein the grain refiner compound is ammonium polyphosphate.
3. The method of claim 1 wherein the grain refiner compound is sodium polyphosphate.
4. The method of claim 1 wherein the grain refiner compound is polyphosphoric acid.
5. The method of claim 1 wherein the grain refiner compound is present in the electroless deposition composition at a concentration between about 1 g/L and about 100 g/L.
6. The method of claim 1 wherein the grain refiner compound is present in the electroless deposition composition at a concentration between about 4 g/L and about 50 g/L.
7. The method of claim 1 wherein the electroless deposition composition further comprises a reducing agent.
8. The method of claim 1 wherein the electroless deposition composition further comprises an oxygen scavenger compound selected from the group consisting of ascorbic acid, SO 3 2− , HSO 3 − , hydroquinone, catechol, resorcinol, hydrazine, and combinations thereof.
9. The method of claim 1 wherein the electroless deposition composition further comprises a stabilizer compound selected from the group consisting of an aminobenzoic acid, an hydroxybenzoic acid, a molybdenum oxide, a vanadium oxide, a rhenium oxide, salts thereof, derivatives thereof, and combinations thereof.
10. The method of claim 1 wherein the electroless deposition composition further comprises a leveler selected from the group consisting of diphenyl oxide disulfonic acids, triethanolamine salts of lauryl sulfate, ammonium laureth sulfates, alkylbenzene sulfonates, dodecylbenzene sulfonic acids, alkyldiphenyloxide disulfonate, low molecular weight polypropylene glycol, and combinations thereof.
11. The method of claim 1 wherein the substrate is a copper metal layer located in a semiconductor integrated circuit device.
12. The method of claim 1 wherein the electroless deposition composition further comprises an oxime-based stabilizer compound selected from the group consisting of salicylaldoxime, syn-2-pyridinealdoxime, dimethylglyoxime, 1,2-cyclohexanedione dioxime, diphenyl glyoxime, pyridyl diglyoxime, and combinations thereof.
13. An electroless plating solution for plating a metal capping layer onto a metal-filled interconnect in a microelectronic device, the solution comprising:
a source of deposition ions selected from the group consisting of Co ions and Ni ions;
a reducing agent; and
a grain refiner compound selected from the group consisting of a polyphosphoric acid, a polyphosphate salt, and a combination thereof wherein said grain refiner compound is a compound having a formula M (n+2) P n O (3n+1) or (MPO 3 ) n , where M represents a counter ion, and n=2 to 600.
14. The plating solution of claim 13 wherein the grain refiner compound is ammonium polyphosphate.
15. The plating solution of claim 13 wherein the grain refiner compound is sodium polyphosphate.
16. The plating solution of claim 13 wherein the grain refiner compound is polyphosphoric acid.
17. The plating solution of claim 13 wherein the grain refiner compound is present in the electroless deposition composition at a concentration between about 1 g/L and about 100 g/L.
18. The plating solution of claim 13 wherein the grain refiner compound is present in the electroless deposition composition at a concentration between about 4 g/L and about 50 g/L.
19. The plating solution of claim 13 wherein the electroless deposition composition further comprises an oxygen scavenger compound selected from the group consisting of ascorbic acid, SO 3 2− , HSO 3 − , hydroquinone, catechol, resorcinol, hydrazine, and combinations thereof.
20. The plating solution of claim 13 wherein the electroless deposition composition further comprises a stabilizer compound selected from the group consisting of an aminobenzoic acid, an hydroxybenzoic acid, a molybdenum oxide, a vanadium oxide, rhenium oxide, salts thereof, derivatives thereof, and combinations thereof.
21. The plating solution of claim 13 wherein the electroless deposition composition further comprises a leveler selected from the group consisting of diphenyl oxide disulfonic acids, triethanolamine salts of lauryl sulfate, ammonium laureth sulfates, alkylbenzene sulfonates, dodecylbenzene sulfonic acids, alkyldiphenyloxide disulfonate, low molecular weight polypropylene glycol, and combinations thereof.
22. The electroless plating solution of claim 13 further comprising an oxime-based stabilizer compound selected from the group consisting of salicylaldoxime, syn-2-pyridinealdoxime, dimethylglyoxime, 1,2-cyclohexanedione dioxime, diphenyl glyoxime, pyridyl diglyoxime, and combinations thereof.