Semiconductor device with a peeling prevention layer
View Patent ↗The invention is directed to improvement of reliability of a semiconductor device having penetrating electrodes by preventing a protection film and an insulation film peeling. A peeling prevention layer for preventing an insulation film and a protection layer peeling is formed in corner portions of the semiconductor device. The peeling prevention layer can increase its peeling prevention effect more when formed in a vacant space of the semiconductor device other than the corner portions, for example, between ball-shaped conductive terminals. In a cross section of the semiconductor device, the peeling prevention layer is formed on the insulation film on the back surface of the semiconductor substrate, and the protection layer formed of a solder resist or the like is formed covering the insulation film and the peeling prevention layer. The peeling prevention layer has a lamination structure of a barrier seed layer and a copper layer formed thereon when formed by an electrolytic plating method.
1. A semiconductor device comprising:
a semiconductor substrate having a via hole connecting a front surface of the semiconductor substrate and a back surface of the semiconductor substrate;
a pad electrode disposed on the front surface to cover the via hole;
an insulation film covering a sidewall of the via hole and the back surface;
a penetrating electrode disposed in the via hole and connected with the pad electrode;
a peeling prevention layer disposed on the insulation film so as to be electrically isolated; and
a protection layer covering the penetrating electrode, the insulation film and the peeling prevention layer,
wherein a recess is formed in the back surface, and part of the insulation film and part of the peeling prevention layer are disposed in the recess.
2. The semiconductor device of claim 1 , wherein the peeling prevention layer comprises a copper layer.
3. A semiconductor device comprising:
a semiconductor substrate having a via hole connecting a front surface of the semiconductor substrate and a back surface of the semiconductor substrate;
a first insulation film disposed on the front surface;
a pad electrode disposed on the front surface to cover the via hole and part of the first insulation film;
a second insulation film covering a sidewall of the via hole and the back surface;
a penetrating electrode disposed in the via hole and connected with the pad electrode;
a wiring layer connected with the penetrating electrode and extending over the second insulation film on the back surface;
a peeling prevention layer disposed on the second insulation film so as to be electrically isolated;
a protection layer covering the penetrating electrode, the second insulation film, the wiring layer and the peeling prevention layer; and
a conductive terminal disposed on the wiring layer through an opening of the protection layer,
wherein the peeling prevention layer is made only of a metal or metals, and both the wiring layer and the peeling prevention layer are directly on the second insulation film.
4. The semiconductor device of claim 3 , wherein the peeling prevention layer is placed in a corner portion of the semiconductor substrate.
5. The semiconductor device of claim 3 , wherein the protection layer is divided into a plurality of regions.
6. The semiconductor device of claim 3 , wherein the peeling prevention layer comprises a copper layer.
7. A semiconductor device comprising:
a semiconductor substrate having a via hole connecting a front surface of the semiconductor substrate and a back surface of the semiconductor substrate;
a first insulation film disposed on the front surface;
a pad electrode disposed on the front surface to cover the via hole and part of the first insulation film;
a second insulation film covering a sidewall of the via hole and the back surface;
a penetrating electrode disposed in the via hole and connected with the pad electrode;
a wiring layer connected with the penetrating electrode and extending over the second insulation film on the back surface;
a peeling prevention layer disposed on the second insulation film so as to be electrically isolated;
a protection layer covering the penetrating electrode, the second insulation film, the wiring layer and the peeling prevention layer; and
a conductive terminal disposed on the wiring layer through an opening of the protection layer,
wherein a recess is formed in the back surface, and part of the second insulation film and part of the peeling prevention layer are disposed in the recess.