Method of making a multi-bit non-volatile memory (NVM) cell and structure
View Patent ↗A multi-bit non volatile memory cell includes a first floating gate sidewall spacer structure and a second floating gate sidewall spacer structure physically separated from the first floating gate sidewall spacer structure. Each floating gate sidewall spacer structure stores charge for logically storing a bit. The floating gate sidewall spacer structures are formed adjacent to a patterned structure by sidewall spacer formation processes from a layer of floating gate material (e.g. polysilicon). A control gate is formed over the floating gate sidewall spacer structures by forming a layer of control gate material and then patterning the layer of control gate material.
1. A method for forming a semiconductor device comprising:
forming first structure over a substrate;
forming a first floating gate sidewall spacer structure adjacent to a first side wall of the first structure and a second floating gate sidewall spacer structure adjacent to a second sidewall of the first structure; and
forming a control gate structure over the first floating gate sidewall spacer structure and over the second floating gate sidewall spacer structure;
wherein the forming the first floating gate sidewall spacer structure and the second floating gate sidewall spacer structure includes forming a third sidewall spacer structure surrounding the first structure, wherein the third sidewall spacer structure includes the first floating gate sidewall spacer structure and the second floating gate sidewall spacer structure.
2. The method of claim 1 wherein the forming the control gate includes:
forming a layer of control gate material over the substrate including over the third sidewall spacer structure;
patterning the layer of control gate material to form the control gate structure;
wherein the patterning the layer of control gate material includes removing portions of the third sidewall spacer structure to physically separate the first floating gate sidewall spacer structure and the second floating gate sidewall spacer structure.
3. The method of claim 1 further comprising:
removing portions of the third sidewall spacer structure to physically separate the first floating gate sidewall spacer structure and the second floating gate sidewall spacer structure.
4. The method of claim 1 further comprising:
removing the first structure prior to the forming the control gate structure.
5. The method of claim 1 further comprising:
removing a first portion of the first structure prior to the forming the control gate structure wherein a second portion of the first structure remains;
wherein the forming the control gate structure includes forming the control gate structure over the second portion after the removing the first portion.
6. The method of claim 5 wherein the first structure includes a layer of a first material over a layer of a second material, wherein the first portion is the layer of the first material and the second portion is the layer of the second material.
7. The method of claim 1 wherein the first structure includes dielectric material.
8. The method of claim 1 wherein the first floating gate sidewall spacer structure and the second floating gate sidewall spacer structure include polysilicon.
9. The method of claim 1 wherein the semiconductor device includes a non volatile memory cell including a control gate, a first floating gate, and a second floating gate, wherein:
the control gate includes the control gate structure;
the first floating gate includes the first floating gate sidewall spacer structure;
the second floating gate includes the second floating gate sidewall spacer structure;
the first floating gate is configured to store charge for storing a first logical bit;
the second floating gate is configured to store charge for storing a second logical bit;
wherein the control gate controls read, write, and erase operations of the first floating gate and the second floating gate.
10. A method of forming a semiconductor device, the method comprising:
forming a first structure over a substrate, the first structure including a first sidewall and a second sidewall opposing the first sidewall;
forming a layer of floating gate material over the substrate and over the first structure;
anisotropically etching the layer of floating gate material, wherein the anisotropically etching leaves a first sidewall spacer structure of the floating gate material adjacent to the first sidewall and a second sidewall spacer structure of the floating gate material adjacent to the second sidewall;
forming a layer of control gate material over the substrate, the first sidewall spacer structure, and the second sidewall spacer structure;
patterning the layer of control gate material, wherein the patterning leaves a control gate structure including a first portion over the first sidewall spacer structure and a second portion over the second sidewall spacer structure;
wherein the anisotropically etching leaves a third sidewall spacer structure surrounding the first structure, the third sidewall spacer structure including the first sidewall spacer structure and the second sidewall spacer structure, the method further comprising:
removing portions of the third sidewall spacer structure to physically separate the first sidewall spacer structure and the second sidewall spacer structure.
11. The method of claim 10 wherein the removing portions is performed during the patterning of the layer of control gate material.
12. The method of claim 10 further comprising:
forming a layer of dielectric material over the first sidewall spacer structure and over the second sidewall spacer structure prior to the forming the layer of control gate material.