Method for producing phase shifter masks

1. A method for producing a phase shifter mask used for 157 nm lithography, the method which comprises:

producing and processing a coating of an organic material on the phase shifter mask using an electron beam for repairing a defect of the phase shifter mask by the following steps:

detecting a defect in a phase shifter material of the phase shifter mask;

depositing a coating of a gaseous organic compound onto the phase shifter mask to thereby obtain the coating of the organic material on the phase shifter mask, the coating covering the defect over a wide area, the wide area exceeding the immediate region of the defect;

pointing the electron beam at the coating of the organic material in the immediate region of the defect and scanning the immediate region with the electron beam, thereby decomposing the coating of the organic material such that the coating is hardened in the immediate region of the defect and a diffusion of organic compounds from non-irradiated areas of the coating of the organic compound to the immediate region of the defect is initiated; and

removing the remaining coating outside the immediate region of the defect.

2. The method according to claim 1 , wherein the coating of the organic material is configured on the phase shifter mask for repairing defects in a half-tone layer of the phase shifter mask.

3. The method according to claim 1 , which comprises, after obtaining a decomposition product from the coating of the organic material, performing a UV cleaning of the phase shifter mask.

4. The method according to claim 1 , wherein the organic compound is free of silicon-organic compounds.

5. The method according to claim 1 , wherein the organic compound is an aromatic compound.