Method for forming an isolating trench with a dielectric material

1. A method of forming an isolating trench of a semiconductor device with a dielectric material, comprising:

providing a substrate;

forming a trench in the substrate;

forming a hole in the substrate that is directly adjacent to the trench and connected by an opening face with the trench;

filling the hole with sacrificial material by providing a space in the hole with an opening face to the trench;

depositing dielectric material in the trench and in the space of the hole;

removing the sacrificial material of the hole; and

curing the dielectric material.

2. The method according to claim 1 , wherein the hole is filled with conductive material forming an electrical contact.

3. The method according to claim 1 , wherein the dielectric material is cured before the sacrificial material is removed.

4. The method according to claim 1 , wherein the dielectric material is chemical mechanical polished before curing the dielectric material.

5. The method according to claim 1 , wherein the recess is filled with metal constituting an electrical contact.

6. The method according to claim 1 , wherein a memory device is produced.

7. The method according to claim 1 , wherein a DRAM is produced.

8. The method according to claim 1 , wherein a liquid dielectric material is filled in the trench and the liquid dielectric material is cured before the sacrificed material is removed of the hole.

9. The method according to claim 8 , wherein the liquid material comprises particles, and the liquid dielectric material is annealed in an ambient with oxygen, such that the particles are oxidized forming an insulator.

10. The method according to claim 8 , wherein silicon particles are used and oxidized to silicon oxide.

11. The method according to claim 2 , wherein the hole is used to form an electrical contact of a capacitor that is arranged in the substrate.

12. The method according to claim 11 , wherein the capacitor is part of a memory cell.

13. The method according to claim 2 , wherein the contact is formed as a bit contact between a bit line and a transistor of a memory cell that is arranged in the substrate.

14. The method according to claim 10 , wherein a shallow trench isolation is formed with the trench filled with the dielectric material.

15. The method according to claim 1 , wherein the method is used to form a memory device.

16. The method according to claim 1 , wherein the method is used to form a logic device.

17. The method according to claim 1 , wherein the liquid dielectric material comprises particles, and the particles are chemically processed forming particles with enlarged volumes compared to the volume of the unprocessed particles.

18. The method according to claim 17 , wherein a polysilazane based liquid dielectric material is used.

19. The method according to claim 17 , wherein silicon particles are used and the silicon particles are oxidized with oxygen forming silicon oxide.

20. The method according to claim 17 , wherein a size of the particles is smaller than a tenth of width of the trench which is filled with the liquid dielectric material comprising the particles.

21. A method of forming an isolating trench on a semiconductor device with a liquid dielectric material, comprising:

providing a substrate;

forming a trench in the substrate, that is arranged between sidewalls;

forming a space in the sidewall that is directly adjacent to the trench and connected by an opening face with the trench;

depositing dielectric material in the space and in the trench;

curing the liquid dielectric material;

removing the sidewalls; and

curing the dielectric filling of the trench.