Semiconductor device with a via hole having a diameter at the surface larger than a width of a pad electrode
View Patent ↗The invention is directed to a semiconductor device having a penetrating electrode and a manufacturing method thereof in which reliability and a yield of the semiconductor device are enhanced. A semiconductor substrate is etched to form a via hole from a back surface of the semiconductor substrate to a pad electrode. This etching is performed under an etching condition such that an opening diameter of the via hole at its bottom is larger than a width of the pad electrode. Next, a second insulation film is formed on the back surface of the semiconductor substrate including in the via hole 16 , exposing the pad electrode at the bottom of the via hole. Next, a penetrating electrode and a wiring layer are formed, being electrically connected with the pad electrode exposed at the bottom of the via hole 16 . Furthermore, a protection layer and a conductive terminal are formed. Finally, the semiconductor substrate is cut and separated in semiconductor dies by dicing.
1. A semiconductor device comprising:
a semiconductor die comprising a first insulation film disposed on a front surface thereof; and
a pad electrode disposed on part of the first insulation film,
wherein the semiconductor die has a via hole formed from a back surface of the semiconductor die toward the pad electrode, and a diameter of the via hole at the front surface is larger than a width of the pad electrode.
2. The semiconductor device of claim 1 , wherein a diameter of the via hole at a middle portion thereof is smaller than the width of the pad electrode and smaller than the diameter of the via hole at the front surface.
3. The semiconductor device of claim 1 , further comprising a second insulation film disposed on the back surface of the semiconductor die and on a sidewall of the via hole, a penetrating electrode disposed on the second insulation film in the via hole and electrically connected with the pad electrode, a wiring layer electrically connected with the penetrating electrode and extending onto the second insulation film on the back surface of the semiconductor die, and a protection layer disposed on the back surface of the semiconductor die so as to cover at least part of the wiring layer.
4. The semiconductor device of claim 3 , further comprising a conductive terminal disposed on the wiring layer not covered by the protection layer.
5. The semiconductor device of claim 1 , further comprises a supporting body disposed on the semiconductor die.
6. The semiconductor device of claim 5 , wherein the supporting body is made of a glass or a tape.
7. A semiconductor device comprising:
a semiconductor die comprising a first insulation film disposed on a front surface thereof; and
a pad electrode disposed on part of the first insulation film,
wherein the semiconductor die has a via hole formed from a back surface of the semiconductor die toward the pad electrode, and at least part of a rim portion of the via hole at the front surface extends beyond an area of the front surface covered by the pad electrode.
8. The semiconductor device of claim 7 , further comprises a supporting body disposed on the semiconductor die.
9. The semiconductor device of claim 8 , wherein the supporting body is made of a glass or a tape.