IP Library Granted Patent US 7,221,555
Granted Patent B2
US 7,221,555 · App. 11/264,977 · Granted May 22, 2007

Surface mount MELF capacitor

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,221,555
App. No.
11/264,977
Granted
May 22, 2007
Kind
B2
Abstract

The surface mount MELF capacitor of the present invention includes a wire and a conductive powder element electrically connected to the wire. The surface mount MELF capacitor has insulative material surrounding at least a portion of the conductive powder element and the wire extending from the conductive powder element. A first terminal is formed on the surface mount chip capacitor at the first end surface of the wire and a second terminal is formed by being electrically connected to the conductive powder element. The surface mount MELF capacitor of the present invention is created by methods which include the steps of providing a wire and placing conductive powder upon the wire. An embodiment of the present invention feeds the wire in a reel to reel system and electrophoretically deposits the conductive powder element upon the wire.

Claims (28)

1. A method of creating a surface mount MELF capacitor comprising:

providing a wire having opposite first and secondends;

forming a conductive element around the wire with the ends of the wire extending beyond the conductive powder element;

the conductive element having a cathode end, an anode end;

applying insulation material over the conductive element, and around wire ends, with the wire ends extending beyond the insulation material;

exposing a portion of the cathode end of the conductive powder element;

applying an anode layer of conductive material around the wire first end and over the insulation material adjacent the anode end of the conductive element so that the anode layer of conductive material is in electrical contact with the wire end; and

applying a cathode layer of conductive material over the exposed portion of the cathode end of the conductive element.

2. The method of claim 1 further comprising the step arranging the wire for acceptance into a reel to reel process.

3. The method of claim 1 further comprising electrophoretically depositing the powder upon the wire.

4. The method of claim 3 wherein the conductive element is from the group consisting of: Ta, Nb, Hf, Zr, Ti, V. W, Be, and Al.

5. The method of claim 3 wherein the conductive element is a substrate of a metal from the group consisting of: Ta, Nb, Hf, Zr, Ti, V, W, Be, and Al.

6. The method of claim 3 wherein the conductive element has a density between 3-8 g/cc.

7. The method of claim 3 wherein the conductive element has a capacitance-voltage between 10 CV and 150 KCV.

8. The method of claim 1 wherein the step of exposing is performed using laser cutting.

9. A method of forming a series of surface mount MELF capacitors, comprising:

providing a wire having opposite first and second ends;

forming a plurality of spaced apart surface mount MELF capacitors on the wire using a reel to reel process.

10. The method of claim 9 further comprising:

electrophoretically depositing a conductive element upon the wire, with the ends of the wire extending beyond the powder element;

forming an insulative layer around a portion of the conductive element and around the wire ends, with the wire ends extending beyond the insulative layer;

forming an anode layer around an uninsulated portion of the conductive element;

forming a cathode layer around the second end of the wire.

11. The method of claim 9 further comprising electrophoretically depositing the powder upon the wire.

12. The method of claim 9 wherein the conductive element is from the group consisting of: Ta, Nb, Hf, Zr, Ti, V, W, Be, and Al.

13. The method of claim 9 wherein the conductive element is a substrate of a metal from the group consisting of: Ta, Nb, Hf, Zr, Ti, V, W, Be, and Al.

14. The method of claim 9 wherein the conductive element has a density between 3-8 g/cc.

15. The method of claim 9 wherein the conductive element has a capacitance-voltage between 10 CV and 150 KCV.

Assignments (4)
RELEASE OF SECURITY INTEREST Recorded Jul 17, 2019
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: VISHAY DALE ELECTRONICS, INC.; DALE ELECTRONICS, INC.; VISHAY INTERTECHNOLOGY, INC.; SILICONIX INCORPORATED; VISHAY SPRAGUE, INC.; VISHAY TECHNO COMPONENTS, LLC; VISHAY EFI, INC.; VISHAY VITRAMON, INC.; SPRAGUE ELECTRIC COMPANY
Reel/Frame 049826/0312 →
SECURITY AGREEMENT Recorded Jan 21, 2011
From: VISHAY INTERTECHNOLOGY, INC.; VISHAY DALE ELECTRONICS, INC.; SILICONIX INCORPORATED; VISHAY SPRAGUE, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 025675/0001 →
RELEASE OF SECURITY INTEREST Recorded Dec 14, 2010
From: COMERICA BANK, AS AGENT, A TEXAS BANKING ASSOCIATION (FORMERLY A MICHIGAN BANKING CORPORATION)
To: VISHAY SPRAGUE, INC., SUCCESSOR-IN-INTEREST TO VISHAY EFI, INC. AND VISHAY THIN FILM, LLC, A DELAWARE CORPORATION; VISHAY DALE ELECTRONICS, INC., A DELAWARE CORPORATION; VISHAY INTERTECHNOLOGY, INC., A DELAWARE CORPORATION; SILICONIX INCORPORATED, A DELAWARE CORPORATION; VISHAY MEASUREMENTS GROUP, INC., A DELAWARE CORPORATION; VISHAY GENERAL SEMICONDUCTOR, LLC, F/K/A GENERAL SEMICONDUCTOR, INC., A DELAWARE LIMITED LIABILITY COMPANY; VISHAY VITRAMON, INCORPORATED, A DELAWARE CORPORATION; YOSEMITE INVESTMENT, INC., AN INDIANA CORPORATION
Reel/Frame 025489/0184 →
SECURITY AGREEMENT Recorded Mar 2, 2010
From: VISHAY SPRAGUE, INC., SUCCESSOR IN INTEREST TO VISHAY EFI, INC. AND VISHAY THIN FILM, LLC; VISHAY DALE ELECTRONICS, INC.; VISHAY INTERTECHNOLOGY, INC.; SILICONIX INCORPORATED; VISHAY MEASUREMENTS GROUP, INC.
To: COMERICA BANK, AS AGENT
Reel/Frame 024006/0515 →