IP Library › Assignment 025489/0184
Patent Assignment
Reel/Frame 025489/0184

Release of Security Interest

Recorded: 2010-12-14 Pages: 27
Assignor
Assignees
VISHAY DALE ELECTRONICS, INC., A DELAWARE CORPORATION
63 LANCASTER AVENUE, MALVERN, PENNSYLVANIA, 19355
VISHAY INTERTECHNOLOGY, INC., A DELAWARE CORPORATION
63 LANCASTER AVENUE, MALVERN, PENNSYLVANIA, 19355
SILICONIX INCORPORATED, A DELAWARE CORPORATION
63 LANCASTER AVENUE, MALVERN, PENNSYLVANIA, 19355
VISHAY MEASUREMENTS GROUP, INC., A DELAWARE CORPORATION
63 LANCASTER AVENUE, MALVERN, PENNSYLVANIA, 19355
VISHAY VITRAMON, INCORPORATED, A DELAWARE CORPORATION
63 LANCASTER AVENUE, MALVERN, PENNSYLVANIA, 19355
YOSEMITE INVESTMENT, INC., AN INDIANA CORPORATION
63 LANCASTER AVENUE, MALVERN, PENNSYLVANIA, 19355
Covered Properties (307)
Vertical Current Flow Field Effect Transistor
Patent: 5,164,325 →
Application: 07/107,725 →
Lightly Doped Drain Mosfet with Reduced On-Resistance
Patent: 5,237,193 →
Application: 07/210,959 →
Complementary, Isolated Dmos Ic Technology
Patent: 5,156,989 →
Application: 07/268,839 →
Gold Diffusion Thin Film Resistors and Process
Patent: 5,023,589 →
Application: 07/404,590 →
Method of Fabricating a Short-Channel Low Voltage Dmos Transistor
Patent: 4,931,408 →
Application: 07/420,971 →
Optimization of Bv and Rds-on by Graded Doping in Ldd and Other High Voltage Ic
Patent: 5,132,753 →
Application: 07/498,170 →
Method for Making a Lead Frame with Fuse and Product Made Thereby
Patent: 5,011,067 →
Application: 07/500,351 →
Thermistor
Patent: 5,160,912 →
Application: 07/579,362 →
Laser-Formed Electrical Component and Method for Making Same
Patent: 5,091,286 →
Application: 07/587,761 →
Closed Cell Transistor with Built-in Voltage Clamp
Patent: 5,136,349 →
Application: 07/597,118 →
Fuzed Solid Electrolyte Capacitor
Patent: 5,099,397 →
Application: 07/677,203 →
Molded Fuzed Solid Electrolyte Capacitor
Patent: 5,053,927 →
Application: 07/677,204 →
Method for Fabricating a High Voltage Mos Transistor
Patent: 5,132,235 →
Application: 07/678,578 →
Electrical Resistors and Methods of Making Same
Patent: 5,206,623 →
Application: 07/695,044 →
Lightly-Doped Drain Mosfet with Improved Breakdown Characteristics
Patent: 5,386,136 →
Application: 07/697,356 →
Trench Dmos Power Transistor with Field-Shaping Body Profile and Three-Dimensional Geometry
Patent: 5,298,442 →
Application: 07/762,103 →
Mos Transistor with a Charge Induced Drain Extension
Patent: 5,243,212 →
Application: 07/802,352 →
Touch Panel and Method for Controlling Same
Patent: 5,179,369 →
Application: 07/806,143 →
High Voltage Mos Transistor with Reduced Parasitic Current Gain
Patent: 5,218,228 →
Application: 07/849,723 →
Threshold Adjustment in Fabricating Vertical Dmos Devices
Patent: 5,248,627 →
Application: 07/854,162 →
Driver Circuit for Sinking Current to Two Supply Voltages
Patent: 5,296,765 →
Application: 07/855,377 →
Bulk Metal Chip Resistor
Patent: 5,287,083 →
Application: 07/860,403 →
Power Device with Buffered Gate Shield Region
Patent: 5,430,314 →
Application: 07/873,423 →
Low on-Resistance Power Mos Technology
Patent: 5,304,831 →
Application: 07/881,589 →
Monolythic Multilayer Chip Inductor and Method for Making Same
Patent: 5,302,932 →
Application: 07/881,856 →
Isolated Dmos Ic Technology
Patent: 5,485,027 →
Application: 07/904,402 →
Vertical Current Flow Field Effect Transistor with Thick Insulator Over Non-Channel Areas
Patent: 5,298,781 →
Application: 07/910,864 →
Field Effect Trench Transistor Having Lightly Doped Epitaxial Region on the Surface Portion Thereof
Patent: 5,910,669 →
Application: 07/918,954 →
High Voltage Transistor Having Edge Termination Utilizing Trench Technology
Patent: 5,430,324 →
Application: 07/918,996 →
Trenched Dmos Transistor Fabrication Using Six Masks
Patent: 5,316,959 →
Application: 07/928,909 →
Low Temperature Oxide Layer Over Field Implant Mask
Patent: 5,328,866 →
Application: 07/949,288 →
Method of Making Vertical Current Flow Field Effect Transistor
Patent: 5,576,245 →
Application: 07/978,201 →
Bicmos Structure
Patent: 5,422,508 →
Application: 08/026,930 →
Method for Forming a Bicdmos
Patent: 5,374,569 →
Application: 08/026,932 →
Short Channel Trenched Dmos Transistor
Patent: 5,341,011 →
Application: 08/031,798 →
Lightly-Doped Drain Mosfet with Improved Breakdown Characteristics
Patent: 5,374,843 →
Application: 08/040,684 →
Method for Reducing on Resistance and Improving Current Characteristics of a Mosfet
Patent: 5,306,656 →
Application: 08/046,058 →
Dmos Power Transistors with Reduced Number of Contacts Using Integrated Body-Source Connections
Patent: 5,410,170 →
Application: 08/047,723 →
Threshold Adjustment in Vertical Dmos Devices
Patent: 5,465,000 →
Application: 08/062,370 →
Disconnect Switch Circuit to Power Head Retract in Hard Disk Drive Memories
Patent: 5,508,874 →
Application: 08/062,503 →
Push-Pull Output Stage for Driving Motors Which Generates Auxiliary Voltage Supply
Patent: 5,377,094 →
Application: 08/062,504 →
Contact Geometry for Improved Lateral Mosfet
Patent: 5,412,239 →
Application: 08/062,507 →
Head-Retract Circuit for Moving Media Storage Apparatus
Patent: 5,455,496 →
Application: 08/062,968 →
Apparatus for Generating Positive and Negative Supply Rails from Operating Motor Control Circuit
Patent: 5,459,654 →
Application: 08/062,969 →
Floating Drive Technique for Reverse Battery Protection
Patent: 5,539,610 →
Application: 08/067,365 →
Junction-Isolated Floating Diode
Patent: 5,414,292 →
Application: 08/067,372 →
Structure and Fabrication of Power Mosfets, Including Termination Structures
Patent: 5,404,040 →
Application: 08/096,135 →
Metal Crossover in High Voltage Ic with Graduated Doping Control
Patent: 5,426,325 →
Application: 08/101,886 →
Low Threshold Voltage Epitaxial Dmos Technology
Patent: 5,479,037 →
Application: 08/131,114 →
Bidirectional Current Blocking Mosfet for Battery Disconnect Switching
Patent: 5,536,977 →
Application: 08/159,900 →
Bidirectional Blocking Lateral Mosfet with Improved On-Resistance
Patent: 5,420,451 →
Application: 08/160,539 →
Gate Drive Technique for a Bidirectional Blocking Lateral Mosfet
Patent: 5,510,747 →
Application: 08/160,560 →
Low on-Resistance Power Mos Technology
Patent: 5,429,964 →
Application: 08/180,265 →
Method of Making Bicdmos Structures
Patent: 5,416,039 →
Application: 08/225,270 →
Bicdmos Structures
Patent: 5,426,328 →
Application: 08/226,419 →
Low Temperature Oxide Layer Over Field Implant Mask
Patent: 5,439,842 →
Application: 08/236,299 →
Method of Making Power Device with Buffered Gate Shield Region
Patent: 5,445,978 →
Application: 08/242,519 →
Trenched Dmos Transistor with Channel Block at Cell Trench Corners
Patent: 5,468,982 →
Application: 08/253,527 →
Reliability Test Method for Semiconductor Trench Devices
Patent: 5,486,772 →
Application: 08/268,755 →
Threshold Adjustment in Field Effect Semiconductor Devices
Patent: 5,648,288 →
Application: 08/281,314 →
Method for Fabricating a Short Channel Trenched Dmos Transistor
Patent: 5,474,943 →
Application: 08/289,358 →
Voltage Converter with Frequency Shift Protection Against Overload Current
Patent: 5,528,483 →
Application: 08/295,271 →
Method of Making Lightly-Doped Drain Dmos with Improved Breakdown Characteristics
Patent: 5,514,608 →
Application: 08/318,027 →
Bidirectinal Blocking Lateral Mosfet with Improved On-Resistance
Patent: 5,451,533 →
Application: 08/318,323 →
Bicdmos Process Technology
Patent: 5,559,044 →
Application: 08/323,950 →
Protective Circuit for Protecting Load Against Excessive Input Voltage
Patent: 5,585,991 →
Application: 08/325,860 →
Electrostatic Discharge Protection Device for Integrated Circuit
Patent: 5,545,909 →
Application: 08/326,172 →
Voltage Regulator Having Improved Stability
Patent: 5,559,424 →
Application: 08/326,408 →
Flyback Power Converter with Spike Compensator Circuit
Patent: 5,517,397 →
Application: 08/350,521 →
Surface Mount Resistor and Method for Making Same
Patent: 5,604,477 →
Application: 08/350,960 →
Structure and Fabrication of Power Mosfets, Including Termination Structures
Patent: 5,521,409 →
Application: 08/362,674 →
Lateral Power Mosfet Having Metal Strap Layer to Reduce Distributed Resistance
Patent: 5,767,546 →
Application: 08/367,388 →
Vertical Power Mosfet Having Thick Metal Layer to Reduce Distributed Resistance
Patent: 5,665,996 →
Application: 08/367,486 →
Low-Side Bidirectional Battery Disconnect Switch
Patent: 5,689,209 →
Application: 08/367,515 →
Trench Field Effect Transistor with Reduced Punch-Through Susceptibility and Low Rdson
Patent: 5,558,313 →
Application: 08/386,895 →
Band Gap Voltage Compensation Circuit
Patent: 5,596,265 →
Application: 08/388,535 →
Output Control Circuit for a Voltage Regulator
Patent: 5,506,496 →
Application: 08/389,705 →
Punch-Through Field Effect Transistor
Patent: 5,592,005 →
Application: 08/415,009 →
Method for Making Termination Structure for Power Mosfet
Patent: 5,597,765 →
Application: 08/423,588 →
Method of Making a Trench Mosfet with Multi-Resistivity Drain to Provide Low on-Resistance by Varying Dopant Concentration in Epitaxial Layer
Patent: 5,674,766 →
Application: 08/429,414 →
Method for Fabricating High Voltage Transistor Having Trenched Termination
Patent: 5,605,852 →
Application: 08/444,336 →
Surface Mount and Flip Chip Technology for Total Integrated Circuit Isolation
Patent: 5,753,529 →
Application: 08/444,660 →
Method of Making a Field Effect Trench Transistor Having Lightly Doped Epitaxial Region on the Surface Portion Thereof
Patent: 5,532,179 →
Application: 08/447,484 →
Voltage-Clamped Power Accumulation-Mode Mosfet
Patent: 5,856,692 →
Application: 08/459,054 →
Bidirectional Blocking Accumulation-Mode Trench Power Mosfet
Patent: 5,661,322 →
Application: 08/459,559 →
Method for Forming a Lateral Mos Transistor Having Lightly Doped Drain Formed Along with Other Transistors in the Same Substrate
Patent: 5,541,125 →
Application: 08/463,165 →
Mos Transistor Having Adjusted Threshold Voltage Formed Along with Other Transistors
Patent: 5,618,743 →
Application: 08/463,417 →
Method for Forming a Bipolar Transistor Having Selected Breakdown Voltage
Patent: 5,541,123 →
Application: 08/463,647 →
Pmos Transistors with Different Breakdown Voltages Formed in the Same Substrate
Patent: 5,583,061 →
Application: 08/464,435 →
Method for Forming a Zener Diode Region and an Isolation Region
Patent: 5,547,880 →
Application: 08/464,978 →
Methodfor Forming a Elecrostatic Discharge Protection Device for Ineg- Rated Circuit
Patent: 5,677,205 →
Application: 08/472,943 →
Method of Forming a Lateral Field Effect Transistor Having Reduced Drain-to-Source On-Resistance
Patent: 5,750,416 →
Application: 08/479,308 →
Pwm Multiplexed Solenoid Driver
Patent: 5,621,604 →
Application: 08/480,469 →
Threshold Adjustment in Field Effect Semiconductor Devices
Patent: 5,726,477 →
Application: 08/482,341 →
Method of Making a Trench Mosfet with Heavily Doped Delta Layer to Provide Low On-Resistance
Patent: 5,688,725 →
Application: 08/482,357 →
Electrostatic Discharge Protection Device for Integrated Circuit
Patent: 5,654,574 →
Application: 08/486,280 →
Gas-Based Substrate Deposition Protection
Patent: 5,925,411 →
Application: 08/487,789 →
High Density Trenched Dmos Transistor
Patent: 5,689,128 →
Application: 08/533,814 →
Trenched Dmos Transistor with Buried Layer for Reduced on-Resistance and Ruggedness
Patent: 5,629,543 →
Application: 08/537,157 →
Switching Device Including Poer Mosfet with Internal Power Supply Circuit
Patent: 5,726,594 →
Application: 08/538,105 →
Bidirectional Current Blocking Mosfet for Battery Disconnect Switching Including Protection Against Reverse Connected Battery Charger
Patent: 5,682,050 →
Application: 08/541,345 →
Multiple Gated Mosfet for Use in Dc-Dc Converter
Patent: 5,616,945 →
Application: 08/542,611 →
Separate Circuit Devices in an Intra-Package Configuration and Assembly Techniques
Patent: 6,066,890 →
Application: 08/556,369 →
Bidirectional Blocking Lateral Mosfet with Improved On-Resistance
Patent: 5,612,566 →
Application: 08/569,334 →
Low Voltage Mosfet with Low on-Resistance and High Breakdown Voltage
Patent: 5,939,752 →
Application: 08/570,876 →
Quiet Commutation Circuit for an Electric Motor
Patent: 5,825,145 →
Application: 08/573,802 →
Closed-Loop Frequency-to-Current Converter with Integrable Capacitances
Patent: 5,736,879 →
Application: 08/594,676 →
Commutation Delay Generator for a Multiphase Brushless Dc Motor
Patent: 5,767,643 →
Application: 08/595,812 →
Trenched Dmos Transistor Fabrication Using Seven Masks and Having Thick Termination Region Oxide
Patent: 5,639,676 →
Application: 08/603,047 →
Surface Mount and Flip Chip Technology for Total Integrated Circuit Isolation
Patent: 5,757,081 →
Application: 08/603,512 →
Trenched Dmos Transistor with Lightly Doped Tub
Patent: 5,821,583 →
Application: 08/610,563 →
Rapid Charging Technique for Lithium Ion Batteries
Patent: 5,670,862 →
Application: 08/615,517 →
Vertical Power Mosfet Having Reduced Sensitivity to Variations in Thickness of Epitaxial Layer
Patent: 5,814,858 →
Application: 08/616,393 →
Trenched Dmos Transistor Having Thick Field Oxide in Termination Region
Patent: 5,578,851 →
Application: 08/625,639 →
Edge Termination Structure for Power Mosfet
Patent: 5,614,751 →
Application: 08/632,052 →
Surface Mount and Flip Chip Technology with Diamond Film Passivation for Total Integrated Circuit Isolation
Patent: 5,767,578 →
Application: 08/634,957 →
Gate Drive Technique for a Bidirectional Blocking Lateral Mosfet
Patent: 5,731,732 →
Application: 08/636,258 →
Method of Blocking Biderectional Flow of Current
Patent: 5,747,891 →
Application: 08/636,367 →
Fabrication of High-Density Trench Dmos Using Sidewall Spacers
Patent: 5,904,525 →
Application: 08/646,593 →
Method for Forming an Isolation Structure and a Bipolar Transistor on a Semiconductor Substrate
Patent: 5,648,281 →
Application: 08/647,073 →
Three-Terminal Power Mosfet Switch for Use as Synchronous Rectifier or Voltage Clamp
Patent: 5,744,994 →
Application: 08/648,266 →
Pseudo-Schottky Diode
Patent: 5,818,084 →
Application: 08/648,334 →
Four-Terminal Power Mosfet Switch Having Reduced Threshold Voltage and On-Resistance
Patent: 5,689,144 →
Application: 08/649,747 →
Long Channel Trench-Gated Power Mosfet Having Fully Depleted Body Region
Patent: 5,998,834 →
Application: 08/651,232 →
Trench Field Effect Transistor with Reduced Punch-Through Susceptibility and Low Rdson
Patent: 5,981,344 →
Application: 08/658,115 →
Monolithic Thick Film Inductor
Patent: 5,986,533 →
Application: 08/665,788 →
Method for Fabricating an Mos Capacitor Using Zener Diode Region
Patent: 5,643,820 →
Application: 08/667,219 →
Trench Mosfet with Multi-Resistivity Drain to Provide Low On-Resistance
Patent: 5,895,952 →
Application: 08/701,035 →
Synchronous Current Sharing Pulse Width Modulator
Patent: 5,808,453 →
Application: 08/701,114 →
Zener Diodes on the Same Wafer with Bicdmos Structures
Patent: 5,751,054 →
Application: 08/705,910 →
Apparatus and Method for Conformally Coating a Capacitor
Patent: 5,888,590 →
Application: 08/710,364 →
Low Profile Inductor/Transformer Component
Patent: 5,760,669 →
Application: 08/736,333 →
Trenched Field Effect Transistor with Pn Depletion Barrier
Patent: 5,917,216 →
Application: 08/742,326 →
Method of Fabricating a Field Effect Transistor
Patent: 6,090,716 →
Application: 08/767,708 →
Dmos Power Transistor with Reduced Number of Contacts Using Integrated Body-Source Connections
Patent: 5,866,931 →
Application: 08/777,636 →
Vertical Power Mosfet Having Thick Metal Layer to Reduce Distributed Resistance
Patent: 6,066,877 →
Application: 08/779,176 →
Doped Sintered Tantalum Pellets with Nitrogen in a Capacitor
Patent: 5,825,611 →
Application: 08/790,293 →
Low-Side Bidirectional Battery Disconnect Switch
Patent: 6,590,440 →
Application: 08/800,972 →
Multiple Gated Mosfet for Use in Dc-Dc Converter
Patent: 5,973,367 →
Application: 08/828,474 →
Trench-Gated Schottky Diode with Integral Clamping Diode
Patent: 6,078,090 →
Application: 08/832,012 →
Trench-Gated Power Mosfet with Protective Diode
Patent: 5,998,836 →
Application: 08/846,688 →
Trench Dmos Power Transistor with Field-Shaping Body Profile and Three-Dimensional Geometry
Patent: 6,627,950 →
Application: 08/851,608 →
Method of Forming Electrostatic Discharge Protection Device for Integrated Circuit
Patent: 5,877,534 →
Application: 08/873,781 →
Method of Makng Monolithic Thick Film Inductor
Patent: 5,970,604 →
Application: 08/881,480 →
Bidirectional Trench Gated Power Mosfet with Submerged Body Bus Extending Underneath Gate Trench
Patent: 5,877,538 →
Application: 08/884,826 →
Method of Making Low Threshold Voltage Epitaxial Dmos Technology
Patent: 5,770,503 →
Application: 08/895,004 →
Trench Mosfet with Heavily Doped Delta Layer to Provide Low on Resistance
Patent: 6,008,520 →
Application: 08/895,497 →
Safety Switch for Lithium Ion Battery
Patent: 5,909,103 →
Application: 08/899,001 →
Method and Apparatus for Providing Gate Drive Voltage to Switching Device
Patent: 5,909,139 →
Application: 08/907,216 →
Integrated Circuit Die Having Thick Bus to Reduce Distributed Resistance
Patent: 5,945,709 →
Application: 08/907,276 →
High Self Resonant Frequency Multilayer Inductor and Method for Making Same
Patent: 5,880,662 →
Application: 08/915,875 →
Low Resistance Power Mosfet or Other Device Containing Silicon-Germanium Layer
Patent: 6,239,463 →
Application: 08/919,386 →
Trench- Gated Power Mosfet with Protective Diode Having Adjustable Breakdown Voltage
Patent: 5,998,837 →
Application: 08/919,523 →
Trench-Gated Mosfet with Bidirectional Voltage Clamping
Patent: 6,049,108 →
Application: 08/920,330 →
Planar Dmos Transistor Fabricated by a Three Mask Process
Patent: 5,923,979 →
Application: 08/922,672 →
Thick Film Low Value High Frequency Inductor, and Method of Making the Same
Patent: 5,922,514 →
Application: 08/936,193 →
Three-Terminal Power Mosfet Switch for Use as Synchronous Rectifier or Voltage Clamp
Patent: 5,929,690 →
Application: 08/937,941 →
Trench-Gated Mosfet with Integral Temperature Detection Diode
Patent: 6,046,470 →
Application: 08/946,613 →
Short Circuit Protected Dc-Dc Converter Using Disconnect Switching and Method of Protecting Load Against Short Circuits
Patent: 6,031,702 →
Application: 08/956,257 →
Trench-Gated Power Mosfet with Protective Diode
Patent: 6,140,678 →
Application: 08/962,867 →
Method of Making Punch-Through Field Effect Transistor
Patent: 6,069,043 →
Application: 08/962,885 →
High Current, Low Profile Inductor
Patent: 6,204,744 →
Application: 08/963,224 →
High Density Trench Dmos Transistor with Trench Bottom Implant
Patent: 5,929,481 →
Application: 08/964,419 →
Method of Fabricating Vertical Power Mosfet Having Low Distributed Resistance
Patent: 6,043,125 →
Application: 08/966,553 →
Folded Ramp Capacitance Circuit with Current Source and Comparator Circuit
Patent: 5,955,903 →
Application: 08/979,837 →
Electrostatic Discharge Protection Circuit
Patent: 6,060,752 →
Application: 09/002,179 →
Portable Computer Containing Bidirectional Current Blocking Mosfet for Battery Disconnect Switching
Patent: 6,087,740 →
Application: 09/006,774 →
Pseudo-Schottky Diode
Patent: 6,476,442 →
Application: 09/037,557 →
Power Mosfet Including Internal Power Supply Circuitry
Patent: 6,087,862 →
Application: 09/041,368 →
Method for Doping Sintered Tantalum Pellets with Nitrogen
Patent: 6,010,660 →
Application: 09/064,475 →
Vertical Dmos Field Effect Transistor with Conformal Buried Layer for Reduced On-Resistance
Patent: 6,072,216 →
Application: 09/071,729 →
Multi-Tap Thin Film Inductor
Patent: 6,159,817 →
Application: 09/074,185 →
Thick Film Low Value High Frequency Inductor, and Method of Making the Same
Patent: 6,215,387 →
Application: 09/080,494 →
Vertical Trench-Gated Power Mosfet Having Stripe Geometry and High Cell Density
Patent: 6,204,533 →
Application: 09/089,250 →
Ic Chip Package with Directly Connected Leads
Patent: 6,249,041 →
Application: 09/089,310 →
Method for Doping Sintered Tantalum and Niobium Pellets with Nitrogen
Patent: 6,185,090 →
Application: 09/146,685 →
Tantalum Chip Capacitor and Method
Patent: 6,238,444 →
Application: 09/167,690 →
Method of Forming Trench Power Mosfet
Patent: 6,096,608 →
Application: 09/186,216 →
Trench Mosfet Having Improved Breakdown and on-Resistance Characteristics
Patent: 6,084,264 →
Application: 09/200,197 →
Surface Mounted Four Terminal Resistor
Patent: 5,999,085 →
Application: 09/247,490 →
Method of Fabricating Lateral Power Mosfet Having Metal Strap Layer to Reduce Distributed Resistance
Patent: 6,159,841 →
Application: 09/264,602 →
Inductor Coil Structure
Patent: 6,198,375 →
Application: 09/271,748 →
Method of Forming Vertical Planar Dmosfet with Self-Aligned Contact
Patent: 6,277,695 →
Application: 09/293,380 →
Power Mosfet Having Voltage-Clamped Gate
Patent: 6,172,383 →
Application: 09/306,003 →
Chip Scale Surface Mount Packages for Semiconductor Device and Process of Fabricating the Same
Patent: 6,316,287 →
Application: 09/395,094 →
Process of Fabricating a Chip Scale Surface Mount Package for Semiconductor Device
Patent: 6,271,060 →
Application: 09/395,095 →
Rf Modem Utilizing Saw Resonator and Correlator and Communications Transceiver Constructed Therefrom
Patent: 6,535,545 →
Application: 09/419,824 →
High Density Trench-Gated Power Mosfet
Patent: 6,348,712 →
Application: 09/428,299 →
Surface Mount Resistor
Patent: 6,184,775 →
Application: 09/441,434 →
Thick Film Low Value High Frequency Inductor, and Method of Making the Same
Patent: 6,201,215 →
Application: 09/448,676 →
Semiconductor Die Package Including Cup-Shaped Leadframe
Patent: 6,744,124 →
Application: 09/468,249 →
Method for Making Formed Surface Mount Resistor
Patent: 6,510,605 →
Application: 09/471,617 →
Method for Making Overlay Surface Mount Resistor
Patent: 6,401,329 →
Application: 09/471,622 →
Monolithic Heat Sinking Resistor
Patent: 6,181,234 →
Application: 09/474,448 →
Barrier Accumulation Mode Mosfet
Patent: 6,285,060 →
Application: 09/476,320 →
Method of Operation of Punch-Through Field Effect Transistor
Patent: 6,444,527 →
Application: 09/481,135 →
Publication: US 2002/0055232
Method and Apparatus for Delivering Power Simultaneously to Rechargeable Battery and Electronic Device
Patent: 6,300,744 →
Application: 09/502,546 →
Method for Doping Sintered Tantalum and Niobium Pellets with Nitrogen
Patent: 6,410,083 →
Application: 09/514,221 →
Vertical Structure and Process for Semiconductor Wafer-Level Chip Scale Packages
Patent: 6,392,290 →
Application: 09/545,287 →
Method for Making Inductor Coil Structure
Patent: 6,449,829 →
Application: 09/546,859 →
Method for Making a High Current Low Profile Inductor
Patent: 6,460,244 →
Application: 09/547,155 →
Surface Mounted Four Terminal Resistor
Patent: 39,660 →
Application: 09/568,937 →
Method for Centering Capacitor in Mold
Patent: 6,368,364 →
Application: 09/577,745 →
Precision High-Frequency Capacitor Formed on Semiconductor Substrate
Patent: 6,538,300 →
Application: 09/661,483 →
Rf Modem and Communications Transceiver Utilizing Saw Device and Pulse Shaping
Patent: 6,970,496 →
Application: 09/688,300 →
Overlay Surface Mount Resistor
Patent: 6,441,718 →
Application: 09/715,252 →
Thick Film Low Value High Frequency Inductor, and Method of Making the Same
Patent: 6,391,526 →
Application: 09/722,853 →
Sintered Tantalum and Niobium Capacitor Pellets Doped with Nitrogen, and Method of Making the Same
Patent: 6,447,570 →
Application: 09/726,866 →
Publication: US 2002/0101645
Chip Scale Surface Mount Package for Semiconductor Device and Process of Fabricating the Same
Patent: 6,441,475 →
Application: 09/733,823 →
Publication: US 2001/0000631
Method of Forming Termination on Chip Components
Patent: 6,541,302 →
Application: 09/758,800 →
Publication: US 2002/0090790
Fast Heat Rise Resistor Using Resistive Foil
Patent: 6,680,668 →
Application: 09/765,901 →
Publication: US 2002/0097137
Side-By-Side Coil Inductor
Patent: 6,587,025 →
Application: 09/774,854 →
Publication: US 2002/0101318
Method for Thin Film Ntc Thermistor
Patent: 6,880,234 →
Application: 09/810,206 →
Publication: US 2002/0130758
Power Chip Resistor
Patent: 7,038,572 →
Application: 09/811,844 →
Publication: US 2002/0130762
Method of Fabricating Trench-Gated Power Mosfet
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Precision Resistor Tube Feeder
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Method for Making Conductive Polymer Capacitor
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Method for Tantalum Pentoxide Moisture Barrier in Film Resistors
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Structure of making a thick film low value high frequency inductor
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Capacitor Termination Assembly
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Chip Scale Surface Mount Package for Semiconductor Device and Process of Fabricating the Same
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Process for Manufacturing Trench Gated Mosfet Having Drain/Drift Region
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Trench Mis Device with Active Trench Corners and Thick Bottom Oxide and Method of Making the Same
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Trench Mis Device with Reduced Gate-to-Drain Capacitance
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Surge Current Chip Resistor
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Method of Suppressing the Oxidation Characteristics of Nickel
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Method for Making Overlay Surface Mount Resistor
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Apparatus for Tantalum Pentoxide Moisture Barrier in Film Resistors
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Method for Making a Resistor Using Resistive Foil
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Method for Manufacturing a Power Chip Resistor
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Method of Making Trench-Gated Mosfet Having Cesium Gate Oxide Layer
Patent: 6,509,233 →
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Structures of and Methods of Fabricating Trench-Gated Mis Devices
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Trench Mis Device with Graduated Gate Oxide Layer
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Method of Fabricating Trench Mis Device with Graduated Gate Oxide Layer
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Method of Fabricating Trench Junction Barrier Rectifier
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Chip Scale Surface Mount Package for Semiconductor Device and Process of Fabricating the Same
Patent: 6,876,061 →
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Thicker Oxide Formation at the Trench Bottom by Selective Oxide Deposition
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Publication: US 2003/0235958
Self-Aligned Differential Oxidation in Trenches by Ion Implantation
Patent: 7,012,005 →
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Publication: US 2003/0235959
Precision High-Frequency Capacitor Formed on Semiconductor Substrate
Patent: 6,621,142 →
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Publication: US 2003/0057517
Precision High-Frequency Capacitor on Semiconductor Substrate
Patent: 6,621,143 →
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Publication: US 2003/0030125
Trench Mosfet Having Implanted Drain-Drift Region
Patent: 6,600,193 →
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Publication: US 2003/0008460
Flip Chip Resistor and Its Manufacturing Method
Patent: 6,727,798 →
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Publication: US 2004/0041688
Inductor Coil and Method for Making Same
Patent: 6,946,944 →
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Publication: US 2003/0016114
Method for Making Trench Mis Device with Reduced Gate-to-Drain Capacitance
Patent: 6,921,697 →
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Publication: US 2003/0062570
Semiconductor Assembly with Package Using Cup-Shaped Lead Frame
Patent: 6,909,170 →
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Method of Manufacturing a Resistor
Patent: 6,892,443 →
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Method for Making Trench Mosfet Having Implanted Drain-Drift Region
Patent: 6,764,906 →
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Publication: US 2003/0102564
Trench Mis Device Having Implanted Drain-Drift Region and Thick Bottom Oxide and Process for Manufacturing the Same
Patent: 7,033,876 →
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Publication: US 2004/0121572
Method of Manufacturing Flip Chip Resistor
Patent: 7,089,652 →
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Publication: US 2004/0041278
High Power Resistor Having an Improved Operating Temperature Range
Patent: 7,102,484 →
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Publication: US 2004/0233032
Trench Mis Device Having Implanted Drain-Drift Region and Thick Bottom Oxide
Patent: 7,291,884 →
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Publication: US 2004/0038467
Triple-Diffused Trench Mosfet and Method of Fabricating the Same
Patent: 6,913,977 →
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Publication: US 2005/0054177
Trench Mis Device with Thick Oxide Layer in Bottom of Gate Contact Trench
Patent: 7,009,247 →
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Publication: US 2004/0166636
Method for Making High Power Resistor Having Improved Operating Temperature Range
Patent: 6,925,704 →
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High Precision Power Resistors
Patent: 7,154,370 →
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Publication: US 2004/0150505
Surface Mount Flipchip Capacitor
Patent: 6,914,770 →
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Surface Mount Melf Capacitor
Patent: 7,088,573 →
Application: 10/792,138 →
Publication: US 2005/0195553
Surface Mount Chip Capacitor
Patent: 7,085,127 →
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Publication: US 2005/0195558
Method for Making Overlay Surface Mount Resistor
Patent: 6,901,655 →
Application: 10/797,866 →
Publication: US 2004/0168304
Termination for Trench Mis Device Having Implanted Drain-Drift Region
Patent: 7,045,857 →
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Publication: US 2005/0215011
Termination for Trench Mis Device Having Implanted Drain-Drift Region
Patent: 6,927,451 →
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Super Trench Mosfet Including Buried Source Electrode and Method of Fabricating the Same
Patent: 7,183,610 →
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Publication: US 2005/0242392
Process for Manufacturing Trench Mis Device Having Implanted Drain-Drift Region and Thick Bottom Oxide
Patent: 7,435,650 →
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Publication: US 2004/0227182
Foil Strain Gage for Automated Handling and Packaging
Patent: 7,150,199 →
Application: 10/958,545 →
Publication: US 2005/0039539
Method for Manufacturing a Fast Heat Rise Resistor
Patent: 7,247,250 →
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Publication: US 2005/0224454
Method of Manufacturing a Resistor
Patent: 7,278,201 →
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Semiconductor Package Including Die Interposed Between Cup-Shaped Lead Frame and Lead Frame Having Mesas and Valleys
Patent: 7,394,150 →
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Publication: US 2006/0108671
Method of Fabricating Semiconductor Package Including Die Interposed Between Cup-Shaped Lead Frame Having Mesas and Valleys
Patent: 7,238,551 →
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Publication: US 2006/0110856
Method for Making Overlay Surface Mount Resistor
Patent: 7,278,202 →
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Publication: US 2005/0104711
Inductor Coil and Method for Making Same
Patent: 7,034,645 →
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Publication: US 2005/0122200
Method for Interwoven Spreading Codes
Patent: 7,394,845 →
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Surface Mount Electrical Resistor with Thermally Conductive, Electrically Insulative Filler and Method for Using Same
Patent: 7,190,252 →
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High Power Resistor Having an Improved Operating Temperature Range
Patent: 7,042,328 →
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Publication: US 2005/0212649
Surface Mount Capacitor and Method of Making Same
Patent: 7,161,797 →
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Process of Fabricating Termination Region for Trench Mis Device
Patent: 7,118,953 →
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Publication: US 2005/0218447
Triple-Diffused Trench Mosfet
Patent: 7,233,043 →
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Publication: US 2005/0280077
Trench Mis Device Having Implanted Drain-Drift Region and Thick Bottom Oxide
Patent: 7,326,995 →
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Publication: US 2005/0236665
Method of Suppressing the Oxidation Characteristics of Nickel
Patent: 7,208,218 →
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Publication: US 2006/0039821
Universal cassette
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Publication: US 2007/0062889
Termination for Trench Mis Device Having Implanted Drain-Drift Region
Patent: 7,268,032 →
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Publication: US 2006/0019448
Surface Mount Melf Capacitor
Patent: 7,167,357 →
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Publication: US 2006/0104007
Surface Mount Melf Capacitor
Patent: 7,221,555 →
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Surface Mount Chip Capacitor
Patent: 7,179,309 →
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Publication: US 2006/0061939
Method of Maufacturing Surface Mount Capacitor
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Surface Mount Chip Capacitor
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Method of Fabricating Trench Mis Device with Thick Oxide Layer in Bottom of Trench
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High Voltage Capacitors
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Publication: US 2007/0195484
Flux Channeled, High Current Inductor
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Inductor Coil
Patent: 7,221,249 →
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High Precision Capacitor with Standoff
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Publication: US 2007/0253143
Inductor with Thermally Stable Resistance
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Method for Making a High Current Low Profile Inductor
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Super Trench Mosfet Including Buried Source Electrode
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Ceramic Dielectric Formulation for Broad Band Uhf Antenna
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Method for Making a High Current Low Profile Inductor
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Power Resistor
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Method for Making a High Current Low Profile Inductor
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Resistor, and Method for Making Same
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Highly Coupled Inductor
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High Powered Inductors Using a Magnetic Bias
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Resistor and Method for Making Same
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Method for Making a High Current Low Profile Inductor
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Metal Strip Resistor for Mitigating Effects of Thermal Emf
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Bulk Capacitor and Method
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Metal Strip Resistor for Mitigating Effects of Thermal Emf
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Metal Strip Resistor for Mitigating Effects of Thermal Emf
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Hermetically Sealed Wet Electrolytic Capacitor
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Related Assignments (6)
Other recorded transfers of the patents in this record — the chain of ownership.
Security Agreement Mar 2, 2010
From: VISHAY SPRAGUE, INC., SUCCESSOR IN INTEREST TO VISHAY EFI, INC. AND VISHAY THIN FILM, LLC; VISHAY DALE ELECTRONICS, INC.; VISHAY INTERTECHNOLOGY, INC.; SILICONIX INCORPORATED
To: COMERICA BANK, AS AGENT
Reel/Frame 024006/0515 →
Security Agreement Jan 21, 2011
From: VISHAY INTERTECHNOLOGY, INC.; VISHAY DALE ELECTRONICS, INC.; SILICONIX INCORPORATED; VISHAY SPRAGUE, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 025675/0001 →
Assignment of Assignor's Interest Feb 15, 2011
From: VISHAY INTERTECHNOLOGY, INC.
To: VISHAY PRECISION GROUP, INC.
Reel/Frame 025809/0682 →
Security Agreement Feb 1, 2013
From: VISHAY PRECISION GROUP, INC.
To: JPMORGAN CHASE BANK
Reel/Frame 029733/0260 →
Security Interest Jun 12, 2019
From: VISHAY DALE ELECTRONICS, INC.; DALE ELECTRONICS, INC.; VISHAY DALE ELECTRONICS, LLC; VISHAY-DALE, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 049440/0876 →
Release of Security Interest Jul 17, 2019
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: VISHAY DALE ELECTRONICS, INC.; DALE ELECTRONICS, INC.; VISHAY INTERTECHNOLOGY, INC.; SILICONIX INCORPORATED
Reel/Frame 049826/0312 →