Trench MIS device with active trench corners and thick bottom oxide
View Patent ↗Trench MOSFETs including active corner regions and a thick insulative layer at the bottom of the trench are disclosed, along with methods of fabricating such MOSFETs. In an exemplary embodiment, the trench MOSFET includes a thick insulative layer centrally located at the bottom of the trench. A thin gate insulative layer lines the sidewall and a peripheral portion of the bottom surface of the trench. A gate fills the trench, adjacent to the gate insulative layer. The gate is adjacent to the sides and top of the thick insulative layer. The thick insulative layer separates the gate from the drain conductive region at the bottom of the trench yielding a reduced gate-to-drain capacitance making such MOSFETs suitable for high frequency applications.
1. A metal-insulator-semiconductor device, comprising:
a semiconductor substrate including a trench extending into said substrate from a surface of said substrate;
a source region of a first conductivity type adjacent to a sidewall of said trench and to said surface;
a body region of a second conductivity type opposite to said first conductivity type adjacent to said source region and to said sidewall and to a first portion of a bottom surface of said trench; and
a drain region of said first conductivity type adjacent to said body region and to a second portion of said bottom surface of said trench,
wherein said trench is lined with a first insulative layer at least along said sidewall that abuts said body region and at least along said first portion of said bottom surface that abuts said body region, and wherein said trench is lined with a second insulative layer at least along said second portion of said bottom surface of said trench, said second insulative layer being coupled to said first insulative layer and said second insulative layer being thicker than said first insulative layer.
2. The MIS device of claim 1 , further comprising a gate region coupled to said first insulative layer and said second insulative layer within said trench.
3. The MIS device of claim 2 , wherein said gate region comprises polysilicon.
4. The MIS device of claim 1 , further including a high conductivity region of said first conductivity type formed in said drain region adjacent to at least said second portion of said bottom surface of said trench.
5. The MIS device of claim 1 , wherein said first insulative layer extends to the interface between said first portion of said bottom surface and said second portion of said bottom surface.
6. The MIS device of claim 5 , wherein said body region extends to the interface between said first portion of said bottom surface and said second portion of said bottom surface.
7. The MIS device of claim 5 , wherein said body region extends to a first distance along said first portion of said bottom surface of said trench.
8. The MIS device of claim 1 , wherein said first insulative layer comprises an oxide.
9. The MIS device of claim 1 , wherein said second insulative layer comprises an oxide.
10. The MIS device of claim 1 , wherein said second insulative layer comprises a multi-layer insulative layer.
11. The MIS device of claim 1 , wherein said MIS device comprises a MOSFET.
12. A trench-gated MOSFET, comprising:
a semiconductor substrate including a trench extending into said substrate from a surface of said substrate;
a source region of a first conductivity type adjacent to a sidewall of said trench and to said surface;
a body region of a second conductivity type opposite to said first conductivity type adjacent to said source region and to said sidewall and to a peripheral portion of a bottom surface of said trench;
a drain region of said first conductivity type adjacent to said body region and to a central portion of said bottom surface of said trench,
wherein said trench is lined with a first insulative layer at least along said sidewall that abuts said body region and at least along said peripheral portion of said bottom surface that abuts said body region, and wherein said trench is lined with a second insulative layer at least along said central portion of said bottom surface of said trench, said second insulative layer being coupled to said first insulative layer and said second insulative layer being thicker than said first insulative layer; and
a gate region coupled to said first insulative layer and said second insulative layer within said trench.
13. The trench-gated MOSFET of claim 12 , wherein said gate region comprises polysilicon.
14. The trench-gated MOSFET of claim 12 , further including a high conductivity region of said first conductivity type formed in said drain region adjacent to at least said central portion of said bottom surface of said trench.
15. The trench-gated MOSFET of claim 12 , wherein said first insulative layer extends to the interface between said peripheral portion of said bottom surface and said central portion of said bottom surface.
16. The trench-gated MOSFET of claim 15 , wherein said body region extends to the interface between said peripheral portion of said bottom surface and said central portion of said bottom surface.
17. The trench-gated MOSFET of claim 15 , wherein said body region extends to a first distance along said peripheral portion of said bottom surface of said trench.
18. The trench-gated MOSFET of claim 12 , wherein said first insulative layer comprises an oxide.
19. The trench-gated MOSFET of claim 12 , wherein said second insulative layer comprises an oxide.
20. The trench-gated MOSFET of claim 12 , wherein said second insulative layer comprises multi-layer insulative layer.
21. A trench-gated MOSFET, comprising:
a semiconductor substrate including a trench extending into said substrate from a first surface of said substrate, said trench including a sidewall, a corner surface, and a central bottom surface;
a source region of a first conductivity type adjacent to said sidewall of said trench and to said first surface;
a body region of a second conductivity type opposite to said first conductivity type adjacent to said source region and to said sidewall and to said corner surface of said trench;
a drain region of said first conductivity type adjacent to said body region and to said central bottom surface of said trench,
wherein said trench is lined with a first insulative layer at least along said sidewall that abuts said body region and at least along said corner surface that abuts said body region, and wherein said trench is lined with a second insulative layer at least along said central bottom surface of said trench, said second insulative layer being coupled to said first insulative layer and said second insulative layer being thicker than said first insulative layer; and
a gate region coupled to said first insulative layer and said second insulative layer within said trench, so as to form an active corner region along at least a portion of said corner surface.
22. The trench-gated MOSFET of claim 21 , further including a high conductivity region of said first conductivity type formed in said drain region adjacent to at least said central bottom surface of said trench.
23. The trench-gated MOSFET of claim 21 , wherein said first insulative layer extends to the interface between said corner surface and said central bottom surface.
24. The trench-gated MOSFET of claim 23 , wherein said body region extends to the interface between said corner surface and said central bottom surface.
25. The trench-gated MOSFET of claim 23 , wherein said body region extends to a first distance along said corner surface of said trench.