IP Library Granted Patent US 7,907,090
Granted Patent B2
US 7,907,090 · App. 11/759,523 · Granted Mar 15, 2011

Ceramic dielectric formulation for broad band UHF antenna

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Quick Facts
Patent No.
US 7,907,090
App. No.
11/759,523
Granted
Mar 15, 2011
Kind
B2
Abstract

A dielectric ceramic composition has a dielectric constant, K, of at least 200 and a dielectric loss, DF, of 0.0006 or less at 1 MHz. The dielectric ceramic composition may be formed by sintering by firing in air without a controlled atmosphere. The dielectric ceramic composition may have a major component of 92.49 to 97.5 wt. % containing 60.15 to 68.2 wt. % strontium titanate, 11.02 to 23.59 wt. % calcium titanate and 7.11 to 21.32 wt. % barium titanate; and a minor component of 2.50 to 7.51 wt. % containing 1.18 to 3.55 wt. % calcium zirconate, 0.50 to 1.54 wt. % bismuth trioxide, 0.2 to 0.59 wt. % zirconia, 0.02 to 0.07 wt. % manganese dioxide, 0.12 to 0.35 wt. % zinc oxide, 0.12 to 0.35 wt. % lead-free glass frit, 0.24 to 0.71 wt. % kaolin clay and 0.12 to 0.35 wt. % cerium oxide. UHF antennas and monolithic ceramic components may use the dielectric ceramic composition.

Claims (22)

1. A broad band UHF antenna comprised of a dielectric ceramic composition containing more than 50 wt. % of a non-ferroelectric material, the dielectric ceramic composition having a dielectric constant, K, of at least 200 and a dielectric loss, DF, of 0.0006 or less at 1 MHz.

2. The broad band UHF antenna of claim 1 wherein the dielectric ceramic composition is formed into a sintered body by firing.

3. The broad band UHF antenna of claim 1 , wherein the dielectric ceramic composition has a dielectric constant, K, of at least 300 and a dielectric loss, DF, of 0.0005 or less at 1 MHz.

4. The broad band UHF antenna of claim 1 , wherein the dielectric ceramic composition is in the form of a monolithic ceramic component.

5. A dielectric ceramic composition having a dielectric constant, K, of at least 200 and a dielectric loss, DF, of 0.0006 or less at 1 MHz, and having a major component of 92.49 to 97.5 wt. % containing 60.15 to 66.80 wt. % strontium titanate, 11.02 to 23.59 wt. % calcium titanate and 7.11 to 21.32 wt. % barium titanate; and a minor component of 2.50 to 7.51 wt. % containing 1.18 to 3.55 wt. % calcium zirconate, 0.50 to 1.54 wt. % bismuth trioxide, 0.2 to 0.59 wt. % zirconia, 0.02 to 0.07 wt. % manganese dioxide, 0.12 to 0.35 wt. % zinc oxide, 0.12 to 0.35 wt. % lead-free glass frit, 0.24 to 0.71 wt. % kaolin clay and 0.12 to 0.35 wt. % cerium oxide.

6. A broad band UHF antenna comprised of the dielectric ceramic composition of claim 5 .

7. An electronic device comprised of the broad band UHF antenna of claim 6 .

8. A monolithic ceramic component comprised of the dielectric ceramic composition of claim 5 .

9. A ceramic dielectric material consisting essentially of a major component of 92.49 to 97.5 wt. % containing 60.15 to 66.80 wt.

10. The ceramic dielectric material of claim 9 wherein the dielectric ceramic material is formed into a sintered body by firing.

11. A broad band UHF antenna comprised of the ceramic dielectric material of claim 9 sintered into a substrate.

12. An electronic device comprised of the broad band UHF antenna of claim 11 .

13. A method of manufacturing, comprising: providing a ceramic dielectric material consisting essentially of a major component of 92.49 to 97.5 wt. % containing 60.15 to 66.80 wt. % strontium titanate, 11.02 to 23.59 wt. % calcium titanate and 7.11 to 21.32 wt. % barium titanate, and a minor component of 2.50 to 7.51 wt. % containing 1.18 to 3.55 wt. % calcium zirconate, 0.50 to 1.54 wt. % bismuth trioxide, 0.2 to 0.59 wt. % zirconia, 0.02 to 0.07 wt. % manganese dioxide, 0.12 to 0.35 wt. % zinc oxide, 0.12 to 0.35 wt. % lead-free glass frit, 0.24 to 0.71 wt. % kaolin clay and 0.12 to 0.35 wt. % cerium oxide; and firing the ceramic dielectric material.

14. The method of claim 13 wherein the step of firing the ceramic dielectric material is firing the ceramic dielectric material to sinter into a substrate.

15. The method of claim 14 wherein the substrate is associated with a UHF broadband antenna.

16. The method of claim 13 wherein the dielectric ceramic composition having a dielectric constant, K, of at least 200 and a dielectric loss, DF, of 0.0006 or less at 1 MHz.

17. The method of claim 13 wherein the dielectric ceramic composition having a dielectric constant, K, of at least 300 and a dielectric loss, DF, of 0.0005 or less at 1 MHz.

18. The method of claim 13 further comprising forming a monolithic ceramic component from the ceramic dielectric material.

19. The method of claim 13 wherein the step of firing the ceramic dielectric material includes firing the ceramic dielectric material to form a sintered body.

20. A dielectric ceramic composition, comprising: 60.15 to 66.80 wt. % strontium titanate, 11.02 to 23.59 wt. % calcium titanate, 7.11 to 21.32 wt. % barium titanate, 1.18 to 3.55 wt. % calcium zirconate, 0.50 to 1.54 wt.

21. A broad band UHF antenna comprised of the dielectric ceramic composition of claim 20 .

22. An electronic device comprised of the broad band UHF antenna of claim 21 .

Assignments (9)
RELEASE OF SECURITY INTEREST Recorded Jul 17, 2019
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: VISHAY DALE ELECTRONICS, INC.; DALE ELECTRONICS, INC.; VISHAY INTERTECHNOLOGY, INC.; SILICONIX INCORPORATED; VISHAY SPRAGUE, INC.; VISHAY TECHNO COMPONENTS, LLC; VISHAY EFI, INC.; VISHAY VITRAMON, INC.; SPRAGUE ELECTRIC COMPANY
Reel/Frame 049826/0312 →
RELEASE OF SECURITY INTEREST Recorded Jul 17, 2019
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: VISHAY DALE ELECTRONICS, INC.; VISHAY INTERTECHNOLOGY, INC.; SILICONIX INCORPORATED
Reel/Frame 049785/0771 →
SECURITY AGREEMENT Recorded Sep 5, 2013
From: VISHAY INTERTECHNOLOGY, INC.; VISHAY DALE ELECTRONICS, INC.; SILICONIX INCORPORATED
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 031170/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 3, 2011
From: BERSHADSKY, ELI; KRAVCHIK, MARINA; KATRARO, REUVEN; BEN-BASSAT, DAVID; ALON, DANI
To: VISHAY INTERTECHNOLOGY, INC.
Reel/Frame 025740/0282 →
SECURITY AGREEMENT Recorded Jan 21, 2011
From: VISHAY INTERTECHNOLOGY, INC.; VISHAY DALE ELECTRONICS, INC.; SILICONIX INCORPORATED; VISHAY SPRAGUE, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 025675/0001 →
RELEASE OF SECURITY INTEREST Recorded Dec 14, 2010
From: COMERICA BANK, AS AGENT, A TEXAS BANKING ASSOCIATION (FORMERLY A MICHIGAN BANKING CORPORATION)
To: VISHAY SPRAGUE, INC., SUCCESSOR-IN-INTEREST TO VISHAY EFI, INC. AND VISHAY THIN FILM, LLC, A DELAWARE CORPORATION; VISHAY DALE ELECTRONICS, INC., A DELAWARE CORPORATION; VISHAY INTERTECHNOLOGY, INC., A DELAWARE CORPORATION; SILICONIX INCORPORATED, A DELAWARE CORPORATION; VISHAY MEASUREMENTS GROUP, INC., A DELAWARE CORPORATION; VISHAY GENERAL SEMICONDUCTOR, LLC, F/K/A GENERAL SEMICONDUCTOR, INC., A DELAWARE LIMITED LIABILITY COMPANY; VISHAY VITRAMON, INCORPORATED, A DELAWARE CORPORATION; YOSEMITE INVESTMENT, INC., AN INDIANA CORPORATION
Reel/Frame 025489/0184 →
SECURITY AGREEMENT Recorded Mar 2, 2010
From: VISHAY SPRAGUE, INC., SUCCESSOR IN INTEREST TO VISHAY EFI, INC. AND VISHAY THIN FILM, LLC; VISHAY DALE ELECTRONICS, INC.; VISHAY INTERTECHNOLOGY, INC.; SILICONIX INCORPORATED; VISHAY MEASUREMENTS GROUP, INC.
To: COMERICA BANK, AS AGENT
Reel/Frame 024006/0515 →
MERGER Recorded May 15, 2008
From: VISHAY VITRAMON, INCORPORATED
To: VISHAY SPRAGUE, INC.
Reel/Frame 020951/0047 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 7, 2007
From: BERSHADSKY, ELI; KRAVCHIK, MARINA; KATRARO, REUVEN; BEN-BASSAT, DAVID; ALON, DANI
To: VISHAY INTERTECHNOLOGY, INC.
Reel/Frame 019396/0012 →