IP Library Granted Patent US 8,049,340
Granted Patent B2
US 8,049,340 · App. 11/277,188 · Granted Nov 1, 2011

Device for avoiding parasitic capacitance in an integrated circuit package

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Quick Facts
Patent No.
US 8,049,340
App. No.
11/277,188
Granted
Nov 1, 2011
Kind
B2
Abstract

An integrated circuit package substrate includes a first and an additional electrically conductive layer separated from each other by an electrically insulating layer, a contact pad formed in the first electrically conductive layer for making a direct connection between the integrated circuit package substrate and a printed circuit board, and a cutout formed in the additional electrically conductive layer wherein the cutout encloses an area that completely surrounds the contact pad for avoiding parasitic capacitance between the additional electrically conductive layer and the printed circuit board.

Claims (30)

1. An integrated circuit package substrate comprising:

a first and a second electrically conductive layer separated from each other by an electrically insulating layer with no intermediate conductive layer therebetween;

a plurality of rows of contact pads formed in the first electrically conductive layer for making a direct connection between the integrated circuit package substrate and a printed circuit board; and

a plurality of cutouts formed in the second electrically conductive layer for reducing parasitic capacitance between the second electrically conductive layer and the first electrically conductive layer, wherein each cutout encloses an electrically insulating area within the second electrically conductive layer, and wherein each electrically insulating area completely overlaps a corresponding one of the contact pads formed in the first electrically conductive layer such that there is substantially no overlap of the rows of contact pads with metal in the second electrically conductive layer.

2. The integrated circuit package substrate of claim 1 further comprising transmit and receive rows of ball pads as the contact pads operable with the second electrically conductive layer for converting a serial data stream to or from a parallel data stream, the second electrically conductive layer being a routing layer including routing traces, the cutouts being arranged in rows corresponding to the rows of ball pads.

3. The integrated circuit package substrate of claim 1 wherein the cutouts have the same dimensions as the contact pads.

4. The integrated circuit package substrate of claim 1 , further comprising a third electrically conductive layer separated from the second electrically conductive layer by a second electrically insulating layer, the third electrically conductive layer including a plurality of cutouts each of which encloses an electrically insulating area and completely overlaps one of the contact pads, the contact pads forming transmit and receive rows, the cutouts in the second and third electrically conductive layers being arranged in rows corresponding to the transmit and receive rows such that there is substantially no overlap of the rows of contact pads with metal in the third electrically conductive layer.

5. The integrated circuit package substrate of claim 4 , wherein the second electrically conductive layer comprises a routing layer electrically connected with the first electrically conductive layer and wherein the third electrically conductive layer comprises a ground return metal layer.

6. The integrated circuit package substrate of claim 1 , wherein the second electrically conductive layer comprises a routing layer electrically connected with the first electrically conductive layer, the cutouts being arranged in rows corresponding to and aligned with the rows of contact pads.

7. An integrated circuit package substrate, comprising:

a first layer comprising a plurality of rows of electrical contacts;

a routing metal layer comprising a plurality of routing traces, the electrical contacts in the first layer being electrically connected with the respective routing traces;

a dielectric layer between the first layer and the routing metal layer with no intermediate conductive layer therebetween; and

a plurality of cutouts in the routing metal layer for reducing parasitic capacitance between the first layer and the routing metal layer, the cutouts respectively overlapping the electrical contacts and having the same or larger dimensions as the electrical contacts such that there is substantially no overlap of the rows of contact pads with metal in the routing metal layer.

8. The integrated circuit package substrate of claim 7 , wherein the cutouts are arranged in rows corresponding to the rows of electrical contacts, each of the cutouts completely overlapping a corresponding one of the electrical contacts.

9. The integrated circuit package substrate of claim 8 , further comprising a ground return metal layer and a second dielectric layer between the routing metal layer and the ground return metal layer, the ground return metal layer including a plurality of cutouts respectively overlapping the electrical contacts for reducing parasitic capacitance between the first layer and the ground return metal layer such that there is substantially no overlap of the rows of contact pads with metal in the ground return metal layer.

10. The integrated circuit package substrate of claim 8 , wherein the rows of electrical contacts include transmit rows and receive rows operable with the routing metal layer for converting a serial data stream to or from a parallel data stream.

11. The integrated circuit package substrate of claim 8 , wherein the electrical contacts are ball pads having the same dimensions as the cutouts.

12. An integrated circuit package substrate, comprising:

a first layer comprising a plurality of rows of electrical contacts;

a plurality of electrically conductive layers disposed immediately proximate the first layer;

a plurality of dielectric layers separating, respectively, the electrically conductive layers and the first layer from each other, and

a plurality of rows of cutouts formed in each of the plurality of the electrically conductive layers, each of the cutouts overlapping a corresponding one of the electrical contacts for reducing parasitic capacitance between the electrically conductive layers and the first layer such that there is substantially no overlap of the rows of electrical contacts with metal in the plurality of electrically conductive layers.

13. The integrated circuit package substrate of claim 12 , wherein each of the cutouts completely overlaps a corresponding one of the electrical contacts.

14. The integrated circuit package substrate of claim 13 , wherein the electrically conductive layers comprise at least a ground return metal layer and a routing metal layer, the routing metal layer comprising a plurality of routing traces, the electrical contacts in the first layer being electrically connected with the respective routing traces using electrically conductive vias.

15. The integrated circuit package substrate of claim 14 , wherein each of the cutouts has the same or larger dimensions as a corresponding electrical contact with which it overlaps.

16. The integrated circuit package substrate of claim 12 , wherein the electrical contacts comprise transmit rows and receive rows, and the electrically conductive layers are operable to convert a serial data stream to or from a parallel data stream.

17. The integrated circuit package substrate of claim 16 , wherein each cutout completely overlaps a corresponding one of the electrical contacts.

18. The integrated circuit package of claim 16 , wherein the electrical contacts comprise ball pads, the cutouts having the same dimensions as the ball pads.

19. The integrated circuit package substrate of claim 18 , further comprising a plurality of vias electrically connected, respectively, to the ball pads and routing traces within the cutouts for respectively connecting the vias to one of the electrically conductive layers.

Assignments (11)
RELEASE OF SECURITY INTEREST Recorded Apr 15, 2022
From: CORTLAND CAPITAL MARKET SERVICES LLC
To: HILCO PATENT ACQUISITION 56, LLC; BELL SEMICONDUCTOR, LLC; BELL NORTHERN RESEARCH, LLC
Reel/Frame 059723/0382 →
SECURITY INTEREST Recorded Feb 1, 2018
From: HILCO PATENT ACQUISITION 56, LLC; BELL SEMICONDUCTOR, LLC; BELL NORTHERN RESEARCH, LLC
To: CORTLAND CAPITAL MARKET SERVICES LLC, AS COLLATERAL AGENT
Reel/Frame 045216/0020 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 17, 2017
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.; BROADCOM CORPORATION
To: BELL SEMICONDUCTOR, LLC
Reel/Frame 044886/0766 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS Recorded Feb 3, 2017
From: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 041710/0001 →
PATENT SECURITY AGREEMENT Recorded Feb 11, 2016
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
Reel/Frame 037808/0001 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS (RELEASES RF 032856-0031) Recorded Feb 2, 2016
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: LSI CORPORATION; AGERE SYSTEMS LLC
Reel/Frame 037684/0039 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 3, 2015
From: LSI CORPORATION
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 035390/0388 →
CHANGE OF NAME Recorded Jun 6, 2014
From: LSI LOGIC CORPORATION
To: LSI CORPORATION
Reel/Frame 033102/0270 →
PATENT SECURITY AGREEMENT Recorded May 8, 2014
From: LSI CORPORATION; AGERE SYSTEMS LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 032856/0031 →
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNOR'S FIRST NAME FROM AMIR TO AMAR PREVIOUSLY RECORDED ON REEL 017365 FRAME 0406. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNOR'S INTEREST. Recorded Apr 10, 2006
From: AMIN, AMAR
To: LSI LOGIC CORPORATION
Reel/Frame 017447/0377 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 22, 2006
From: HALL, JEFFREY; NIKOUKARY, SHAWN; AMIN, AMIR; JENKINS, MICHAEL
To: LSI LOGIC CORPORATION
Reel/Frame 017365/0406 →