Method for exposing a substrate with a beam
A method is disclosed in which the speed of the substrate carrier system 50 is changed during exposure depending on the exposure pattern density. The substrate carrier system 50 defines a track curve 60 , whereby the exposure pattern is exposed within a band (62 1 , 62 2 , . . . 62 3 ) around the track curve.
1 . Method for exposing on a substrate 6 with a beam system 35 and a substrate carrier system 50 , wherein the speed of the substrate carrier system 50 is changed depending on an exposure pattern density during exposure.
2 . Method according to claim 1 , wherein the substrate carrier system 50 defines a track curve 62 1 , 62 2 , . . . 62 n , and wherein the exposure pattern is exposed within a band 60 around the track curve 62 1 , 62 2 , . . . 62 n .
3 . Method according to claim 1 , wherein the beam system 35 exhibits a primary deflection system 25 and a micro deflection system 23 , whereby the primary deflection system pre-positions the beam 32 within the track curve 62 1 , 62 2 , . . . 62 n in partial working fields 6 a , and the micro deflection system 23 fine positions the beam 32 within each partial working field 6 a in order to produce an exposure pattern there.
4 . Method according to one of claims 1 , wherein the track curve 60 is a strip on the substrate 6 , and which exhibits a surface that is smaller than that of the substrate 6 itself.
5 . Method according to claim 4 , wherein the track curve 60 lies along a plane that is parallel to the surface of the substrate 6 .
6 . Method according to claim 1 , wherein the change in speed with which the track curve 60 is defined is determined in advance based on the exposure pattern density, depending on parameters of the substrate carrier system 50 and on parameters of the beam system 35 .
7 . Method according to claim 4 , wherein the parameters of the substrate carrier system 50 comprise the maximum permissible acceleration and the minimum and maximum speed of the substrate system 50 .
8 . Method according to claim 4 , wherein the parameters of the beam system 35 comprise the response time and deflection range of the deflection systems and the overhead time of the electronic control system 39 .
9 . Method according to one of claims 1 , wherein the positional correction lag-time of the substrate carrier system and of the beam system are determined dependent on the local speed of the substrate system for precise positioning of the exposure pattern on the substrate.
10 . Method according to one of claims 1 , wherein the beam is a corpuscular beam.
11 . Method according to claim 10 , wherein the corpuscular beam is an electron beam.
12 . Method according to one of claims 1 , wherein the substrate is a mask for semiconductor production.
13 . Method according to one of claims 1 , wherein the substrate is a wafer.