IP Library Granted Patent US 7,412,870
Granted Patent B2
US 7,412,870 · App. 11/293,030 · Granted Aug 19, 2008

Method and apparatus for dynamic impact testing

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Quick Facts
Patent No.
US 7,412,870
App. No.
11/293,030
Granted
Aug 19, 2008
Kind
B2
Abstract

A method and apparatus wherein a material or object to be tested is placed on a base support. A stopper assembly having a stopper tip on one end in contact with the test material or object, and a washer on the opposite end attached to a rod. A projectile is propelled with a selected level of force along the rod and impacts the washer, which transmits the force of impact through the stopper tip to the test material or object. The level of propelling force, the mass of the projectile, the construction of the stopper assembly and the location of impact on the test material or object may be precisely adjusted to simulate real-life impacts.

Claims (49)

1. An apparatus for performing dynamic impact tests, the apparatus comprising:

a projectile for delivering a desired impact force;

a stopper for transmitting the desired impact force to a predetermined location on a semiconductor target, wherein the projectile delivers the desired impact force by striking a first end of the stopper; and

a guide for directing the projectile to the stopper, the guide having a proximal end releasably attached to the first end of the stopper and a distal end, wherein

a second end of the stopper comprises a stopper tip for directing the desired impact force to the semiconductor target when the stopper tip is placed in substantial contact with the semiconductor target at the predetermined location.

2. The apparatus of claim 1 , and further comprising a base for securing the semiconductor target.

3. The apparatus of claim 1 , wherein the distal end is elevated relative to the proximal end, and the guide includes a release mechanism operative to release the projectile from a selected release point between the proximal end and the distal.

4. The apparatus of claim 3 , wherein mass of the projectile is selectable to provide the desired impact force.

5. The apparatus of claim 3 , wherein the release point is selected to provide the desired impact force.

6. The apparatus of claim 1 , wherein the guide is located in a substantially horizontal plane, and wherein the projectile is accelerated to a desired velocity from the distal end in the direction of the proximal end.

7. The apparatus of claim 1 , and further comprising a propeller for accelerating the projectile.

8. The apparatus of claim 7 , wherein the propeller accelerates using one or more energy sources, the sources including gravitational, electric, magnetic, electromagnetic, vacuum, hydraulic, pneumatic, mechanical spring, explosive, combustive and chemically reactive sources.

9. The apparatus of claim 1 , wherein the stopper tip comprises a stopper body and a tip end, the tip end being constructed from a material selected to provide a desired coefficient of restitution between the stopper tip and the semiconductor target.

10. The apparatus of claim 1 , wherein the stopper tip is configured to transmit the desired impact force to a selected area defining the predetermined location, the selected area having a desired shape and a desired size.

11. An apparatus for performing dynamic impact tests, the apparatus comprising:

a projectile for delivering a desired impact force; and

a stopper for transmitting the desired impact force to a predetermined location on a semiconductor target, wherein the semiconductor target comprises a semiconductor wafer and the projectile delivers the desired impact force by striking a first end of the stopper and

wherein a second end of the stopper comprises a stopper tip for directing the desired impact force to the semiconductor target when the stopper tip is placed in substantial contact with the semiconductor target at the predetermined location.

12. An apparatus for performing dynamic impact tests, the apparatus comprising:

a projectile for delivering a desired impact force; and

a stopper for transmitting the desired impact force to a predetermined location on a semiconductor target, wherein the semiconductor target comprises one or more integrated circuit die and the projectile delivers the desired impact force by striking a first end of the stopper, and

wherein a second end of the stopper comprises a stopper tip for directing the desired impact force to the semiconductor target when the stopper tip is placed in substantial contact with the semiconductor target at the predetermined location.

13. An apparatus for performing dynamic impact tests, the apparatus comprising:

a projectile for delivering a desired impact force; and

a stopper for transmitting the desired impact force to a predetermined location on a semiconductor target, wherein the semiconductor target comprises an integrated circuit and the projectile delivers the desired impact force by striking a first end of the stopper, and

wherein a second end of the stopper comprises a stopper tip for directing the desired impact force to the semiconductor target when the stopper tip is placed in substantial contact with the semiconductor target at the predetermined location.

14. A method for performing dynamic impact testing, comprising the steps of:

establishing contact between a stopper and a predetermined location on a semiconductor material;

accelerating a projectile to obtain a desired velocity, wherein the projectile has an adjustable mass;

striking the stopper with the projectile to obtain an impact force, wherein the stopper transmits the impact force to the predetermined location;

repeating the steps of establishing, accelerating, and striking a selected number of times; and

adjusting the mass of the projectile prior to each repetition.

15. The method of claim 14 , and further comprising adjusting the desired velocity prior to each repeating.

16. The method of claim 14 , and further comprising replacing the semiconductor material prior to each repeating.

17. A method for performing dynamic impact testing, comprising the steps of:

establishing contact between a stopper and a predetermined location on a semiconductor material;

accelerating a projectile to obtain a desired velocity;

striking the stopper with the projectile to obtain an impact force, wherein the stopper transmits the impact force to the predetermined location; and

inspecting the semiconductor material for impact damage, wherein inspecting includes

capturing an image of the semiconductor material after each impact, and

processing the image to identify impact damage.

18. A dynamic impact testing method, comprising:

establishing a contact between the tip of a stopper and a predetermined location on a surface of a test object;

when the contact is established, causing a projectile to strike the stopper at a velocity calculated to deliver a desired impact force to the test object at the predetermined location; and

selectively repeating the steps of establishing and causing the projectile to strike, wherein selectively repeating includes

performing a predetermined number of repetitions of the steps of establishing and causing the projectile to strike, and

changing at least one of the velocity of the projectile and the mass of the projectile before each repetition, and wherein

the stopper is configured to receive the desired impact force from the projectile and deliver the desired impact force to the predetermined location.

19. The dynamic impact testing method of claim 18 , wherein selectively repeating includes repeating the steps of establishing and causing the projectile to strike until the test object suffers structural failure.

Assignments (5)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 038620, FRAME 0087 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064070/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT PATENT NUMBER 5859768 AND TO RECITE COLLATERAL AGENT ROLE OF RECEIVING PARTY IN THE SECURITY INTEREST PREVIOUSLY RECORDED ON REEL 038620 FRAME 0087. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Aug 25, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 039853/0001 →
RELEASE OF SECURITY INTEREST Recorded May 6, 2016
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT AND COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 038631/0345 →
RELEASE OF SECURITY INTEREST Recorded May 6, 2016
From: JPMORGAN CHASE BANK, N.A. (ON ITS BEHALF AND ON BEHALF OF ITS PREDECESSOR IN INTEREST, CHASE MANHATTAN BANK)
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 038632/0074 →
SECURITY INTEREST Recorded Apr 15, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 038620/0087 →