Method of producing a conductive layer including two metal nitrides

1. A method for producing a capacitor, comprising the steps of:

providing a substrate;

depositing, on a surface of said substrate, a first conductive layer comprised of at least two different metal nitrides by depositing two of the at least two metal nitrides simultaneously on the substrate, to form a first electrode;

depositing a dielectric layer on the first electrode; and

depositing a second conductive layer on the dielectric layer to form a second electrode.

2. The method of claim 1 , wherein the at least two different metal nitrides deposited simultaneously on the substrate forms a layer that comprises at least two different metals as the first conductive layer.

3. The method of claim 1 , wherein two of the at least two different metal nitrides comprise hafnium nitride and titanium nitride formed simultaneously on the substrate.

4. The method of claim 3 , wherein the hafnium nitride and the titanium nitride are deposited in a ratio of two thirds titanium nitride to one third hafnium nitride.

5. A method for producing a capacitor, comprising the steps of:

providing a first substrate;

depositing a first conductive layer over the first substrate to form a first electrode;

depositing a dielectric layer on the first electrode; and

depositing a second conductive layer on the dielectric layer to form a second electrode;

wherein the deposition of the first conductive layer comprises the steps:

depositing a first metal nitride layer on a surface of said substrate;

depositing a second metal nitride layer on a surface of said first metal nitride layer, wherein the second metal nitride layer directly contacts the first metal nitride layer, and wherein the first and second metal nitride layers are different from one another; and

depositing a third metal nitride layer on a surface of said second metal nitride layer, wherein the third metal nitride layer directly contacts the second metal nitride layer, and wherein the second and third metal nitride layers are different from one another.

6. The method of claim 5 , comprising depositing said first, second and third nitride layers of the first electrode by means of an ALD process.

7. The method of claim 5 , wherein said first metal nitride layer comprises titanium nitride.

8. The method of claim 7 , wherein said second metal nitride layer comprises hafnium nitride;

the chemical composition of said third metal nitride layer corresponds to the chemical composition of said first metal nitride layer; and

the first and third metal nitride layer comprising titanium nitride containing no grain structures.

9. The method of claim 8 , wherein the first and third metal nitride layers are less than 5 nm thick and the second metal nitride layer is less than 1 nm thick.

10. The method of claim 5 , wherein said second metal nitride layer comprises hafnium nitride.

11. The method of claim 5 , wherein the chemical composition of said third metal nitride layer corresponds to the chemical composition of said first metal nitride layer.

12. The method of claim 5 , comprising repeating the steps of depositing said second metal nitride layer on said surface of said first metal nitride layer and depositing said third metal nitride layer on said surface of said second metal nitride layer.

13. The method of claim 5 , wherein at least one of said first, second or third metal layers is less than 5 nm thick.

14. The method of claim 5 , wherein at least one of said first, second or third metal layers is less than 1 nm thick.

15. The method of claim 5 , wherein at least one of said first, second, or third metal nitride layers comprises hafnium nitride and titanium nitride.

16. The method of claim 5 , wherein a second substrate is deposited over the second conductive layer.

17. The method of claim 16 , wherein first and third metal nitride layers are less than 5 nm thick and the second metal nitride layer is less than 1 nm thick.

18. The method of claim 17 , wherein the mean surface roughness of the first metal nitride layer is less than 1 nm.

19. The method of claim 18 , wherein the mean surface roughness of the third metal nitride layer is less than 1 nm.