Coaxial waveguide microstructures having an active device and methods of formation thereof
View Patent ↗Provided are coaxial waveguide microstructures. The microstructures include a substrate and a coaxial waveguide disposed above the substrate. The coaxial waveguide includes: a center conductor; an outer conductor including one or more walls, spaced apart from and disposed around the center conductor; one or more dielectric support members for supporting the center conductor in contact with the center conductor and enclosed within the outer conductor; and a core volume between the center conductor and the outer conductor, wherein the core volume is under vacuum or in a gas state. Also provided are methods of forming coaxial waveguide microstructures by a sequential build process and hermetic packages which include a coaxial waveguide microstructure.
1. A coaxial waveguide microstructure, comprising:
a substrate having a planar region;
a coaxial waveguide disposed above the substrate, comprising:
a center conductor;
an outer conductor comprising one or more walls, spaced apart from and disposed around the center conductor, wherein each of the outer conductor walls is disposed over the planar region;
one or more dielectric support members for supporting the center conductor in contact with the center conductor and enclosed within the outer conductor; and
a core volume between the center conductor and the outer conductor, wherein the core volume is under vacuum or in a gas state; and
an active device.
2. The coaxial waveguide microstructure of claim 1 , wherein the active device is bonded to the coaxial waveguide.
3. The coaxial waveguide microstructure of claim 1 , wherein the outer conductor comprises a first sidewall, and a plurality of the dielectric support members have a first end portion thereof embedded in the first sidewall.
4. The coaxial waveguide microstructure of claim 1 , wherein the one or more dielectric support members are in the form of support posts having a first end thereof on an inner surface of the outer conductor and a second end thereof in contact with the center conductor.
5. The coaxial waveguide microstructure of claim 1 , wherein the coaxial waveguide has a generally rectangular coaxial structure.
6. The coaxial waveguide microstructure of claim 1 , wherein the substrate is a semiconductor substrate.
7. The coaxial waveguide microstructure of claim 6 , wherein the semiconductor substrate is a silicon substrate.
8. The coaxial waveguide microstructure of claim 6 , wherein the semiconductor substrate is a gallium arsenide substrate.
9. A coaxial waveguide microstructure, comprising:
a substrate;
a plurality of coaxial waveguides disposed above the substrate in a stacked arrangement, each waveguide comprising:
a center conductor;
an outer conductor comprising one or more walls, spaced apart from and disposed around the center conductor;
one or more dielectric support members for supporting the center conductor in contact with the center conductor and enclosed within the outer conductor; and
a core volume between the center conductor and the outer conductor, wherein the core volume is under vacuum or in a gas state; and
an active device.
10. The coaxial waveguide microstructure of claim 9 , wherein the active device is bonded to a said coaxial waveguide.
11. The coaxial waveguide microstructure of claim 9 , wherein the outer conductor comprises a first sidewall, and a plurality of the dielectric support members have a first end portion thereof embedded in the first sidewall.
12. The coaxial waveguide microstructure of claim 9 , wherein the one or more dielectric support members are in the form of support posts having a first end thereof on an inner surface of the outer conductor and a second end thereof in contact with the center conductor.
13. The coaxial waveguide microstructure of claim 9 , wherein a via joins together a plurality of the coaxial waveguides.
14. The coaxial waveguide microstructure of claim 9 , wherein the substrate is a semiconductor substrate.
15. The coaxial waveguide microstructure of claim 14 , wherein the semiconductor substrate is a silicon substrate.
16. The coaxial waveguide microstructure of claim 14 , wherein the semiconductor substrate is a gallium arsenide substrate.
17. A hermetic package, comprising:
a coaxial waveguide microstructure, comprising:
a substrate;
a coaxial waveguide disposed above the substrate, comprising:
a center conductor;
an outer conductor comprising one or more walls, spaced apart from and disposed around the center conductor;
one or more dielectric support members for supporting the center conductor in contact with the center conductor and enclosed within the outer conductor; and
a core volume between the center conductor and the outer conductor, wherein the core volume is under vacuum or in a gas state; and
an active device.
18. The hermetic package of claim 17 , wherein the active device is bonded to the coaxial waveguide.
19. The hermetic package of claim 17 , wherein the substrate is a semiconductor substrate.
20. The hermetic package of claim 19 , wherein the semiconductor substrate is a gallium arsenide substrate.