Granted Patent B1

US 7,205,583 · App. 11/317,213 · Granted Apr 17, 2007

Abstract

Claims (30)

1. A thyristor, comprising:

a semiconductor substrate of a first conductivity type having first and second surfaces;

a first doped region of a second conductivity type extending from the first surface into the semiconductor substrate, the first doped region having a vertical boundary in the semiconductor substrate, wherein a portion of the vertical boundary has a first notch; and

a second doped region of the first conductivity type extending from the first surface into the first doped region.

2. The thyristor of claim 1 , further including a third doped region of the second conductivity type extending from the second surface into the semiconductor substrate, the third doped region having a vertical boundary.

3. The thyristor of claim 2 , further including a fourth doped region of the first conductivity extending from the second surface into the third doped region.

4. The thyristor of claim 3 , further including a fifth doped region of the first conductivity type extending from the first surface into the first doped region, the fifth doped region laterally spaced apart from the second doped region.

5. The thyristor of claim 4 , wherein the portion of the vertical boundary of the first doped region that has the first notch is vertically adjacent the second doped region and wherein the first notch and the second doped region cooperate to form a gain enhancement region in the first doped region.

6. The thyristor of claim 4 , wherein the portion of the vertical boundary of the first doped region that has the first notch is vertically adjacent the fifth doped region and wherein the first notch and the fifth doped region cooperate to form a gain enhancement region in the first doped region.

7. The thyristor of claim 3 , further including a fifth doped region of the first conductivity type extending from the second surface into the third doped region, the fifth doped region laterally spaced apart from the fourth doped region.

8. The thyristor of claim 7 , wherein the portion of the vertical boundary of the first doped region that has the first notch is vertically adjacent the second doped region and wherein the first notch and the second doped region cooperate to form a gain enhancement region in the first doped region.

9. The thyristor of claim 7 , further including a sixth doped region of the first conductivity type extending from the first surface into the semiconductor substrate, wherein the portion of the vertical boundary of the first doped region that has the first notch is vertically adjacent the sixth doped region and wherein the first notch and the sixth doped region cooperate to form a gain enhancement region in the first doped region.

10. The thyristor of claim 4 , further including a doped extension region of the first conductivity type extending from the second doped region into the first doped region.

11. The thyristor of claim 4 , wherein the doped extension region of the first conductivity type is adjacent the portion of the vertical boundary of the first doped region that has the first notch.

12. The thyristor of claim 4 , further including a doped extension region of the first conductivity type extending from the fifth doped region.

13. The thyristor of claim 12 , wherein the doped extension region of the first conductivity type is adjacent the portion of the vertical boundary of the first doped region that has the first notch.

14. The thyristor of claim 3 , wherein a portion of the vertical boundary of the third doped region has a second notch.

15. The thyristor of claim 14 , wherein the portion of the vertical boundary of the third doped region that has the second notch is vertically adjacent the fourth doped region and wherein the second notch and the fourth doped region cooperate to form a gain enhancement region in the second doped region.

16. The thyristor of claim 15 , further including a doped extension region of the first conductivity type extending from the fourth doped region into the third doped region.

17. The thyristor of claim 16 , wherein the notch in the vertical boundary of the third doped region is adjacent the doped extension region of the first conductivity type extending from the fourth doped region.

18. The thyristor of claim 4 , further including:

a sixth doped region of the second conductivity type extending from the first surface into the first doped region; and

a seventh doped region of the second conductivity type extending from the first surface into the first doped region.

19. The thyristor of claim 18 , further including an eighth doped region of the first conductivity type extending from the second surface into the third doped region.

20. A method for manufacturing a thyristor, comprising:

providing a semiconductor substrate of a first conductivity type, the semiconductor substrate having first and second surfaces;

forming a first doped region of a second conductivity type in the semiconductor substrate, the first doped region extending from the first surface into the semiconductor substrate and having a vertical boundary in the semiconductor substrate, wherein a portion of the vertical boundary has a notch; and

forming a second doped region of the first conductivity type in the semiconductor substrate, the second doped region extending from the first surface into the first doped region.

21. The method of claim 20 , further including forming a third doped region of the second conductivity type in the semiconductor substrate, the third doped region extending from the second surface into the semiconductor substrate and having a vertical boundary in the semiconductor substrate.

22. The method of claim 21 , wherein forming the third doped region includes forming the third doped region to have a notch in a portion of the vertical boundary.

Assignments (7)