IP Library › Granted Patent US 7,422,973
Granted Patent B2
US 7,422,973 · App. 11/341,302 · Granted Sep 9, 2008

Method for forming multi-layer bumps on a substrate

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Quick Facts
Patent No.
US 7,422,973
App. No.
11/341,302
Granted
Sep 9, 2008
Kind
B2
Abstract

A method for forming multi-layer bumps on a substrate includes depositing an adhesive or a flux on the substrate, depositing a first metal powder on the adhesive, and melting or reflowing the adhesive and first metal powder to form first bumps. An adhesive or a flux and a second metal powder are then deposited on the first bumps, and melted to form second bumps on the first bumps to form multi-layer bumps. The multi-layer bumps are formed without the need for any wet chemicals.

Claims (34)

1. A method for forming a bump on a substrate, comprising:

depositing a first adhesive on the substrate by inkjet printing;

depositing a first metal powder on the first adhesive, wherein the first metal powder adheres to the first adhesive;

heating the first adhesive and the first metal powder to form a first bump on the substrate;

depositing a second adhesive on the first bump;

depositing a second metal powder on the second adhesive, wherein the second metal powder adheres to the second adhesive; and

heating the second adhesive and the second metal powder to form a second bump on the first bump.

2. The method for forming a bump on a substrate according to claim 1 , wherein a melting point of the second metal powder is lower than a melting point of the first metal powder.

3. The method for forming a bump on a substrate according to claim 2 , further comprising coining the first bump and the second bump into a predetermined form factor.

4. The method for forming a bump on a substrate according to claim 2 , wherein the first metal powder and the second metal powder each have a particle size between about 5 microns to about 10 microns.

5. The method for forming a bump on a substrate according to claim 4 , wherein the first metal powder comprises high lead solder and the second metal powder comprises eutectic solder.

6. The method for forming a bump on a substrate according to claim 1 , wherein heating the second adhesive and the second metal powder further comprises evaporating the second adhesive.

7. The method for forming a bump on a substrate according to claim 1 , wherein heating the first adhesive and the first metal powder further comprises evaporating the first adhesive.

8. A method for forming a bump on a substrate, comprising:

depositing a first adhesive on the substrate by:

providing a reservoir of the first adhesive;

dipping a pin into the reservoir to coat the pin with the first adhesive; and

dispensing the first adhesive onto the substrate via the pin;

depositing a first metal powder on the first adhesive, wherein the first metal powder adheres to the first adhesive; and

heating the first adhesive and the first metal powder to form a first bump on the substrate.

9. The method for forming a bump on a substrate according to claim 1 , further comprising removing an unadhered portion of the first metal powder prior to heating the first adhesive and the first metal powder.

10. The method for forming a bump on a substrate according to claim 9 , wherein the first adhesive comprises one of tin-lead solder flux, water soluble flux, and no-clean flux.

11. The method for forming a bump on a substrate according to claim 9 , wherein the first adhesive and the first metal powder are heated to a temperature of between about 300 degrees Celsius to about 350 degrees Celsius.

12. A method for forming a multi-layer connector on a substrate, comprising:

depositing a first adhesive and a first metal powder on the substrate, wherein the first adhesive is deposited on the substrate by inkjet printing;

heating the first adhesive and the first metal powder to form a first bump;

depositing a second adhesive and a second metal powder over the first bump; and

heating the second adhesive and the second metal powder to form a second bump on the first bump, wherein the first bump and the second bump form the multi-layer connector.

13. The method for forming a multi-layer connector on a substrate according to claim 12 , wherein a melting point of the second metal powder is lower than a melting point of the first metal powder.

14. The method for forming a multi-layer connector on a substrate according to claim 12 , further comprising coining the multi-layer connector into a predetermined form factor.

15. The method for forming a multi-layer connector on a substrate according to claim 12 , wherein heating the first adhesive and the first metal powder further comprises evaporating the first adhesive, and heating the second adhesive and the second metal powder further comprises evaporating the second adhesive.

16. The method for forming a multi-layer connector on a substrate according to claim 12 , further comprising removing an unadhered portion of the first metal powder prior to heating the first adhesive and the first metal powder.

17. The method for forming a multi-layer connector on a substrate according to claim 12 , wherein the first adhesive and the second adhesive comprise a flux.

18. The method for forming a multi-layer connector on a substrate according to claim 12 , wherein the first metal powder and the second metal powder each have a particle size between about 5 microns to about 10 microns.

Assignments (23)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE LISTED CHANGE OF NAME SHOULD BE MERGER AND CHANGE PREVIOUSLY RECORDED AT REEL: 040652 FRAME: 0180. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Jan 12, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 041354/0148 →
CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 040652/0180 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037518/0292 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0143 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0553 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037354/0757 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037354/0225 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →
SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030633/0424 →
SECURITY AGREEMENT Recorded May 13, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 024397/0001 →
SECURITY AGREEMENT Recorded Dec 9, 2008
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A.
Reel/Frame 021936/0772 →
SECURITY AGREEMENT Recorded Feb 2, 2007
From: FREESCALE SEMICONDUCTOR, INC.; FREESCALE ACQUISITION CORPORATION; FREESCALE ACQUISITION HOLDINGS CORP.; FREESCALE HOLDINGS (BERMUDA) III, LTD.
To: CITIBANK, N.A. AS COLLATERAL AGENT
Reel/Frame 018855/0129 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 27, 2006
From: SHIU, HEI MING; CHAU, ON LOK; LAI, GOR AMIE
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 017506/0855 →