Wire bond and redistribution layer process
View Patent ↗A manufacturing method of a semiconductor device with a copper redistribution line, a copper inductor and aluminum wire bond pads and the integration of the resulting device with an integrated circuit on a single chip, resulting in the decreased size of the chip.
1. A method of connecting exposed wire bond pads of a semiconductor apparatus to external connection lines comprising the steps of:
providing a semiconductor substrate, the substrate including a plurality of devices, some of which are electrically connected, some of which are ESD protection devices and some of which are filtering devices;
disposing a plurality of layers over the semiconductor substrate, at least one of the layers and a top layer being insulating layers and at least another of the layers being a conducting aluminum layer, the conducting aluminum layer including aluminum wiring that electrically interconnects at least some of the plurality of devices, a plurality of internal wire bond pads and a plurality of external wire bond pads;
disposing a copper redistribution line located within an insulating redistribution layer over the top layer, the copper redistribution line interconnecting at least some of the internal wire bond pads and including a copper inductor therein;
removing vertical portions of the insulating redistribution layer and corresponding vertical portions of the insulating layer in order to expose the plurality of external wire bond pads yet maintain the copper redistribution line and the copper inductor covered; and
filling each of the vertical portions with a conducting material to connect the external wire bond pads to the external connection lines.
2. The method of claim 1 wherein the copper inductor has an impedance in the range from 3 nanohenries to 50 nanohenries.
3. The method of claim 2 wherein the filtering devices operate in a range of 3 gigahertz to 10 gigahertz.
4. The method of claim 3 wherein the ESD protection devices provide ESD protection in a range of +/−15 kilo electron volt to +/−30 kilo electron volt.
5. A method of connecting a semiconductor substrate to external connection lines comprising
in a first manufacturing operation:
providing a plurality of devices on a semiconductor substrate, including a plurality of electrically connected devices, one or more ESD protection devices and one or more filtering devices;
disposing a plurality of layers over the semiconductor substrate, including at least one insulating layer, a top insulating layer and a conducting layer, the conducting layer including aluminum wiring that electrically interconnects at least some of the plurality of electrically connected devices, a plurality of internal wire bond pads and a plurality of external wire bond pads;
disposing an insulating redistribution layer over the top layer, wherein copper redistribution line is provided within the insulating redistribution layer for interconnecting at least some of the internal wire bond pads and wherein a copper inductor is provided within the insulating redistribution layer;
removing vertical portions of the insulating redistribution layer and corresponding vertical portions of one or more of the at least one insulating layer and the top insulating layer in order to expose the plurality of external wire bond pads while maintaining insulation of the copper redistribution line and the copper inductor and
in a second manufacturing operation different from and subsequent to the first manufacturing operation filling each of the vertical portions with a conducting material to connect the external wire bond pads to the external connection lines.
6. The method of claim 5 wherein the copper inductor has an impedance of at least 3 nanohenries.
7. The method of claim 6 wherein the impedance is less than 50 nanohenries.
8. The method of claim 5 wherein the filtering devices include a device that operates an operating frequency greater than 3 gigahertz.
9. The method of claim 8 wherein the operating frequency is less than 10 gigahertz.
10. The method of claim 5 wherein the ESD protection devices provide at least 15 kilo electron volt of protection.
11. The method of claim 10 wherein the ESD protection devices provide up to +/−30 kilo electron volt of protection.