Semiconductor module for making electrical contact with a connection device via a rewiring device
View Patent ↗The present invention provides a semiconductor module having: a semiconductor device ( 10 ) having a contact device ( 11 ) for making electrical contact with a connection device ( 17; 20 ) via a rewiring device ( 15, 15′, 15 ″); and a carrier device ( 12, 13, 14 ) for mechanically coupling the semiconductor device ( 10 ) to a connection device ( 17 ), the carrier device ( 12, 13, 14 ) having a gradient between a first modulus of elasticity at the semiconductor device ( 10 ) and a second, higher modulus of elasticity at the connection device ( 17; 20 ). The present invention likewise provides a method for producing a semiconductor module.
1. Semiconductor module having:
a semiconductor device having a contact device for making electrical contact with a connection device via a rewiring device; and
a carrier device for mechanically coupling the semiconductor device to the connection device, the carrier device comprising a subunit arranged between the semiconductor device and the connection device, wherein the subunit has a gradient between a first modulus of elasticity at the semiconductor device and a second, higher modulus of elasticity at the connection device.
2. Semiconductor module according to claim 1 , characterized in that the subunit of the carrier device has at least two non-conductive layers.
3. Semiconductor module according to claim 1 , characterized in that the gradient of the modulus of elasticity has a stepped or linear profile.
4. Semiconductor module according to claim 2 , characterized in that a patterned or large-area, conductive layer is provided at least between two layers.
5. Semiconductor module according to claim 1 , characterized in that a rewiring device which is electrically conductively connected to the contact device of the semiconductor device is one of provided on the carrier device and provided within the carrier device.
6. Semiconductor module according to claim 4 , characterized in that the connection device has elastic contact elevations which are electrically contact-connected to the rewiring device.
7. Semiconductor module according to claim 1 , characterized in that the connection device has solder balls.
8. Semiconductor module according to claim 1 , characterized in that the first modulus of elasticity of the carrier device is less than 5 MPa and the second modulus of elasticity of the carrier device is greater than 50 MPa.
9. Semiconductor module according to claim 1 , characterized in that the carrier device has silicone as a covering layer.
10. Semiconductor module according to claim 1 , characterized in that the side areas of the carrier device have a finite slope.
11. Semiconductor module according to claim 1 , characterized in that the semiconductor device is formed by a memory device.
12. The semiconductor module of claim 2 , wherein the subunit of the carrier device has three non-conductive layers.
13. The semiconductor module of claim 2 , wherein a furthest one of the at least two non-conductive layers that is furthest from the semiconductor device is at least partially covered by a surface of the rewiring device facing the semiconductor device.
14. The semiconductor module of claim 6 , wherein the elastic contact elevations have a contact tip.
15. The semiconductor module of claim 7 , wherein the solder balls are for connection to a printed circuit board.
16. The semiconductor module of claim 9 , wherein the carrier device further includes epoxy resin as a further covering layer.
17. The semiconductor module of claim 15 , wherein the carrier device further includes a patterned solder resist layer.
18. The semiconductor module of claim 10 , wherein the finite slope is less than 4.
19. The semiconductor device of claim 11 , wherein the memory device is a DRAM.