Cross talk reduction
View Patent ↗A method and apparatus for reducing cross-talk between pixels in a semiconductor based image sensor. The apparatus includes neighboring pixels separated by a homojunction barrier to reduce cross-talk, or the diffusion of electrons from one pixel to another. The homojunction barrier being deep enough in relation to the other pixel structures to ensure that cross-pixel electron diffusion is minimized.
1. A semiconductor based image sensor having pixels, comprising:
in each of the pixels, a first region having dopants of a first conductivity type disposed in a charge generation layer having dopants of a second conductivity type;
in a border region between pixels, a second region having dopants of the second conductivity type disposed in the charge generation layer, wherein the second region is deeper in the charge generation layer than the first region; and
a third region of the second conductivity type disposed in the charge generation layer, wherein the second region is at least twice as deep in the charge generation layer as the third region, wherein the first region and third region are laterally disposed in relation to one another, and wherein the first region is deeper in the charge generation layer than the third region.
2. The semiconductor based image sensor of claim 1 , wherein the first conductivity type is n-type and wherein the second conductivity type is p-type.
3. The semiconductor based image sensor of claim 1 , wherein the charge generation layer and the first region in each of the pixels form photodiodes.
4. The semiconductor based image sensor of claim 1 , wherein the border region comprises a homojunction barrier comprising the second region having dopants of the second conductivity type.
5. The semiconductor based image sensor of claim 1 , wherein the third region is part of readout circuitry for operating on signals being generated by charge carriers collected by the first region.
6. The semiconductor based image sensor of claim 1 , wherein the second region is disposed in the third region.
7. The semiconductor based image sensor of claim 6 , wherein the charge generation layer is an epitaxial layer, wherein the third region is a p-well and the second region is a p-implant.
8. The semiconductor based image sensor of claim 1 , wherein the second region is disposed in the charge generation layer outside of the third region.
9. The semiconductor based image sensor of claim 1 , further comprising a trench in the border region, wherein the second region is disposed around the trench.
10. The semiconductor based image sensor of claim 9 , wherein the charge generation layer is an epitaxial layer and wherein the third region is a p-well and the second region is a p-implant.
11. The semiconductor based image sensor of claim 1 , wherein the charge generation layer is an epitaxial layer and wherein the third region is a p-well and the second region is a p-implant.
12. The semiconductor based image sensor of claim 1 , further comprising a fourth region having dopants of the first conductivity type disposed in the third region.
13. A method, comprising:
providing a semiconductor based image sensor having neighboring pixels, wherein said pixels comprise photodiodes, each having a first region of dopants of a first conductivity type;
receiving radiation in a charge collection layer of the semiconductor based image sensor to generate electrons, wherein said charge collection layer is comprised of dopants of a second conductivity type, wherein the first region is disposed in said charge collection layer at a first depth; and
inhibiting the diffusion of electrons that are generated closer to one of the neighboring pixels than to the other of the neighboring pixels using a second region, wherein said second region is comprised of the second conductivity type different from the first conductivity type, wherein said second region has a greater depth in said charge collection layer than the first region, and a third region of the second conductivity type disposed in the charge generation layer, wherein said second region is at least twice as deep in the charge generation layer as the third region, wherein the first region and third region are laterally disposed in relation to one another, and wherein the first region has a greater depth in said charge collection layer than the third region.
14. The method of claim 13 , wherein the first conductivity type is n-type and wherein the second conductivity type is p-type.
15. The method of claim 13 , wherein the charge collection layer is an epitaxial layer and wherein the second region is a p-implant and the third region is a p-well.