Method for fabricating a nonvolatile memory element and a nonvolatile memory element

1. A method for fabricating a nonvolatile memory element, comprising the steps of:

providing a substrate;

fabricating a nanomask structure on said substrate;

growing a self-assembled monolayer of an organic memory molecule on said substrate on a region not covered by said nanomask structure;

patterning a surface of said substrate by means of an electrode beam in order to form regions with organic memory molecules and regions without organic memory molecules; and

applying a top contact to said monolayer formed from said organic memory molecules and said nanomask.

2. The method of claim 1 , wherein said substrate is a silicon substrate.

3. The method of claim 1 , wherein said nanoparticles are at least one of a group consisting of SiO x , ZnO, and insulating metal oxide nanoparticles.

4. The method of claim 1 , comprising binding said organic memory molecules to said substrate via a nitrile group.

5. The method of claim 1 , comprising applying said top contact by vapor deposition of a gold layer.

6. The method of claim 5 , comprising cooling said substrate during said vapor deposition.

7. The method of claim 5 , comprising carrying out said vapor deposition in vacuo.

8. The method of claim 1 , wherein said top contact is a carbon nanotube coated with titanium or palladium.

9. The method of claim 1 , comprising drying said substrate after growing said self-assembled monolayer on said substrate.