MOSFET package
View Patent ↗A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.
1. A semiconductor device comprising:
a semiconductor substrate with a MOSFET;
a first electrode of said MOSFET formed on a first principal plane of said semiconductor substrate;
a second electrode of said MOSFET formed on a second principal plane of said semiconductor substrate, said second principal plane being opposite to said first principal plane;
a first conductive member positioned under said first electrode, said first conductive member being electrically connected with said first electrode;
a second conductive member positioned over said second electrode, said second conductive member being electrically connected with said second electrode; and
a resin body covering said semiconductor substrate, said first and second electrodes and parts of said first and second conductive members,
wherein said second conductive member has a first part and a second part, said second part being contiguous to said first part,
said first part is positioned above said second principal plane of said semiconductor substrate,
said second part extends downwards from said first part,
a top surface of said first part of said second conductive member is exposed from said resin body, the exposed said top surface contains a portion positioned right above said semiconductor substrate, and
a bottom surface of said first conductive member is exposed from said resin body, the exposed said bottom surface contains a portion positioned right below said semiconductor substrate.
2. The semiconductor device according to claim 1 , wherein said semiconductor device is a surface mounted device.
3. The semiconductor device according to claim 1 , wherein said second part of said second conductive member is arranged to be opposite to a side face of said semiconductor substrate.
4. The semiconductor device according to claim 1 , wherein said first and second conductive members are made of lead frames.
5. The semiconductor device according to claim 1 , wherein said first and second electrodes are a drain electrode and a source electrode of said MOSFET, respectively.
6. The semiconductor device according to claim 5 , wherein a gate electrode of said MOSFET is formed on said second principal plane of said semiconductor substrate.
7. The semiconductor device according to claim 6 , where a bottom surface of said second part of said second conductive member and said bottom surface of said first conductive member are at a same level.
8. The semiconductor device according to claim 1 , where a bottom surface of said second part of said second conductive member and said bottom surface of said first conductive member are at a same level.