Method of fabricating a diaphragm of a capacitive microphone device
View Patent ↗A method of fabricating a diaphragm of a capacitive microphone device. First, a substrate is provided, and a dielectric layer on a first surface of the substrate is formed. Than, a plurality of silicon spacers are formed on a surface of the dielectric layer, and a diaphragm layer is formed on a surface of the silicon spacers and the surface of the dielectric layer. Subsequently, a planarization layer is formed on the diaphragm layer, and a second surface of the substrate is etched to form a plurality of openings corresponding to the diaphragm layer disposed on the surface of the dielectric layer. Thereafter, the dielectric layer exposed through the openings is removed, and planarization layer is removed.
1. A method of fabricating a diaphragm of a capacitive microphone device, comprising:
providing a substrate, and forming a dielectric layer on a first surface of the substrate;
forming a plurality of silicon spacers on a surface of the dielectric layer;
forming a diaphragm layer on a surface of the silicon spacers and the surface of the dielectric layer;
forming a planarization layer on the diaphragm layer, and etching a second surface of the substrate to form a plurality of openings corresponding to the diaphragm layer disposed on the surface of the dielectric layer;
removing the dielectric layer exposed through the openings; and
removing the planarization layer.
2. The method of claim 1 , wherein the dielectric layer comprises a silicon oxide layer.
3. The method of claim 1 , wherein forming the silicon spacers comprises:
depositing a silicon layer on the surface of the dielectric layer; and
etching a portion of the silicon layer and stopping etching at the dielectric layer to form the silicon spacers;
wherein each of the silicon spacers has a vertical sidewall.
4. The method of claim 3 , wherein the silicon layer comprises a polycrystalline silicon layer, an amorphous crystalline silicon layer, or a single crystalline silicon layer.
5. The method of claim 1 , wherein the diaphragm layer comprises a polycrystalline silicon layer, an amorphous crystalline silicon layer, or a single crystalline silicon layer.
6. The method of claim 1 , further comprising forming a plurality of vents in the diaphragm layer subsequent to forming the diaphragm layer.
7. The method of claim 1 , further comprising performing a thinning process on the second surface of the substrate prior to forming the openings.
8. The method of claim 1 , further comprising forming a metal layer on the surface of the diaphragm layer subsequent to removing the dielectric layer exposed through the openings.
9. The method of claim 8 , further comprising segmenting the substrate to form a plurality of diaphragm structures subsequent to forming the metal layer.