Current comparison based voltage bias generator for electronic data storage devices
View Patent ↗An electronic data storage system uses current comparison to generate a voltage bias. In at least one embodiment, a voltage bias generator, that includes a current differential amplifier, generates a current that charges a load to a predetermined voltage bias level. The current comparison results in the comparison between two currents, I ref and I saref . The current I saref can be generated using components that match components in the load and memory circuits in the system. In one embodiment, multiple sense amplifiers represent the load. By using matched components, as physical characteristics of the load and memory circuits change, the current I saref also changes. Thus, the voltage bias changes to match the changing characteristics of the load and memory circuits. The voltage bias generator can include a current booster that decreases the initial charging time of a reactive load.
1. A system comprising:
a voltage bias generator to generate a voltage bias for a load from a comparison between a first current and a second current, wherein the voltage bias generator further comprises:
a feedback path to receive a feedback signal to alter the first current based on a value of the feedback signal; and
a current booster to supply boost current to the load to decrease an amount of time for the load to reach a predetermined voltage bias level.
2. The system of claim 1 wherein the load comprises a plurality of sense amplifiers coupled to the voltage bias generator, the system further comprising:
a plurality of memory cells coupled to the sense amplifiers.
3. The system of claim 1 wherein the load comprises sense amplifier components and the voltage bias generator further comprises:
a current differential amplifier to compare the first current to the second current and to generate a difference current, wherein the difference current comprises a reference current minus a sense amplifier reference current, wherein during operation of the system the sense amplifier reference current varies in accordance with changes in components that model the sense amplifier components of the load.
4. The system of claim 2 wherein the voltage bias generator further comprises:
a sense amplifier model circuit to generate a current component of the first current, wherein components of the sense amplifier model circuit track one or more change in electrical properties of the sense amplifiers due to environmental changes.
5. The system of claim 1 wherein the load includes a reactive impedance.
6. The system of claim 5 further comprising:
one or more switches coupled to the current booster to stop and start the supply of the boost current to the load.
7. The system of claim 1 wherein the feedback signal comprises the voltage bias.
8. The system of claim 2 wherein the memory cells comprise flash memory cells.
9. An electronic data storage system comprising:
a load;
a first current generator to generate a first current;
a second current generator to generate a second current;
a current differential amplifier, coupled to the load and the first and second current generators, to compare the first current and the second current and to generate an output current to charge the load to a predetermined voltage reference bias;
a feedback path coupled to the first current generator to supply a feedback signal to the first current generator to alter the first current based on a value of the feedback signal;
a current boost source; and
a switch coupled between the current boost source and the second current generator.
10. The electronic data storage system of claim 9 wherein the feedback signal comprises the voltage reference bias.
11. The electronic data storage system of claim 9 wherein the first current generator comprises a sense amplifier model circuit, wherein components of the sense amplifier model circuit track one or more changes in electrical properties of sense amplifiers in the load due to environmental changes.
12. The electronic data storage system of claim 9 wherein the load comprises a plurality of sense amplifiers, the electronic data storage system further comprising:
a plurality of memory cells, each coupled to a respective one of the sense amplifiers.
13. The electronic data storage system of claim 12 wherein the memory cells comprise flash memory cells.
14. A method of generating a voltage reference bias in an electronic data storage system, the method comprising:
generating a first current reference signal;
generating a second current reference signal;
charging a load to a predetermined level of the voltage reference bias using a difference between the first current reference signal and the second current reference signal; and
boosting the second current reference signal by a factor of N, wherein N is a real number greater than one (1).
15. The method of claim 14 wherein the load includes a plurality of sense amplifiers, wherein generating the first current reference signal comprises:
generating a sense amplifier reference current that varies in accordance with changes in modeled sense amplifier components.
16. The method of claim 15 further comprising:
responding to changes in the sense amplifier reference current to maintain the predetermined voltage reference level.
17. The method of claim 14 wherein boosting the second current reference signal by a factor of N further comprises:
during initialization of the electronic data storage system, boosting the second current reference signal by the factor of N, wherein N is a real number greater than one (1).
18. The method of claim 14 wherein the charging a load to a predetermined voltage reference level further comprises:
charging a plurality of input terminals of respective sense amplifiers to the predetermined voltage reference level.
19. The method of claim 14 further comprising:
receiving a feedback signal to alter the first current reference signal based on a value of the feedback signal.
20. An electronic data storage system comprising:
a voltage bias generator to generate a voltage bias for a load from a comparison between a first current and a second current, wherein the voltage bias generator further comprises a feedback path to receive a feedback signal to alter the first current based on a value of the feedback signal and the second current is generated by a constant current source during operation of the electronic data storage system wherein the load includes a reactive impedance and the voltage bias generator further comprises a current booster to supply boost current to the load to decrease an amount of time for the load to reach a predetermined voltage bias level.
21. The electronic data storage system of claim 20 wherein the load comprises a plurality of sense amplifiers coupled to the voltage bias generator, the electronic data storage system further comprising:
a plurality of memory cells coupled to the sense amplifiers.
22. The electronic data storage system of claim 21 wherein the voltage bias generator further comprises:
a sense amplifier model circuit to generate a current component of the first current, wherein components of the sense amplifier model circuit track one or more changes in electrical properties of the sense amplifiers due to environmental changes.
23. The electronic data storage system of claim 21 wherein the memory cells comprise flash memory cells.
24. The electronic data storage system of claim 20 wherein the load comprises sense amplifier components and the voltage bias generator further comprises:
a current differential amplifier to compare the first current to the second current and to generate a difference current, wherein the difference current comprises a reference current minus a sense amplifier reference current, wherein during operation of the electronic data storage system the sense amplifier reference current varies in accordance with changes in components that model the sense amplifier components of the load.
25. The electronic data storage system of claim 20 further comprising:
one or more switches coupled to the current booster to stop and start the supply of the boost current to the load.
26. An electronic data storage system comprising:
a voltage bias generator to generate a voltage bias for a load from a comparison between a first current and a second current, wherein:
the voltage bias generator further comprises a feedback path to receive a feedback signal to alter the first current based on a value of the feedback signal and the second current is generated by a constant current source during operation of the electronic data storage system;
the load comprises a plurality of sense amplifiers coupled to the voltage bias generator; and
the voltage bias generator further comprises a sense amplifier model circuit to generate a current component of the first current, wherein components of the sense amplifier model circuit track one or more changes in electrical properties of the sense amplifiers due to environmental changes; and
a plurality of memory cells coupled to the sense amplifiers.
27. An electronic data storage system comprising:
a voltage bias generator to generate a voltage bias for a load from a comparison between a first current and a second current, wherein:
the voltage bias generator further comprises a feedback path to receive a feedback signal to alter the first current based on a value of the feedback signal and the second current is generated by a constant current source during operation of the electronic data storage system;
the load comprises sense amplifier components; and
the voltage bias generator further comprises a current differential amplifier to compare the first current to the second current and to generate a difference current, wherein the difference current comprises a reference current minus a sense amplifier reference current, wherein during operation of the electronic data storage system the sense amplifier reference current varies in accordance with changes in components that model the sense amplifier components of the load.