Integrated circuit system with carbon and non-carbon silicon
View Patent ↗An integrated circuit system includes a substrate, a carbon-containing silicon region over the substrate, a non-carbon-containing silicon region over the substrate, and a silicon-carbon region, including the non-carbon-containing silicon region and the carbon-containing silicon region.
1. A method for manufacturing an integrated circuit system comprising:
providing a substrate;
applying an even number of carbon-containing silicon layers over the substrate;
applying an odd number of non-carbon-containing silicon layers over the substrate; and
forming a silicon-carbon region, including the carbon-containing silicon regions on bottom and top of each of the non-carbon-containing silicon layers with substantially no disruptions on the top carbon-containing silicon region; and layer, the top carbon-containing silicon layer including a top surface of the integrated circuit system.
2. The method as claimed in claim 1 wherein forming the silicon-carbon region includes fanning the non-carbon-containing silicon layers in thin layers.
3. The method as claimed in claim 1 wherein applying the carbon-containing silicon layers includes applying a silicon source and a carbon source.
4. The method as claimed in claim 1 wherein applying the non-carbon-containing silicones layers includes stopping a carbon source.
5. The method as claimed in claim 1 wherein forming the silicon-carbon region includes applying hydrogen chloride to clean the silicon-carbon region.
6. A method for manufacturing an integrated circuit system comprising:
providing a substrate for integrated circuits;
depositing an even number of carbon-containing silicon layers for an epitaxial layer on the substrate;
depositing an odd number of non-carbon-containing silicon layers for the epitaxial layer on the substrate; and
forming a silicon-carbon region, including the carbon-containing silicon layers on bottom and top of each of the non-carbon-containing silicon layers with substantially no disruptions on the top carbon-containing silicon region; and layer, the top carbon-containing silicon layer including a top surface of the integrated circuit system.
7. The method as claimed in claim 6 wherein forming the silicon-carbon region includes forming the carbon-containing silicon layers substantially contiguous with the non-carbon-containing silicon layers.
8. The method as claimed in claim 6 wherein forming the silicon-carbon region includes forming the silicon-carbon region with over twenty-two hundredths of a percent carbon.
9. The method as claimed in claim 6 wherein depositing the carbon-containing silicon layers includes applying carbon and silicon.
10. The method as claimed in claim 6 wherein forming the silicon-carbon region includes forming a single epitaxial film.
11. An integrated circuit system comprising:
a substrate;
an even number of carbon-containing silicon layers over the substrate;
an odd number of non-carbon-containing silicon layers over the substrate;
a silicon-carbon region, including the carbon-containing silicon layers on bottom and top of each of the non-carbon-containing silicon layers with substantially no disruptions on the top carbon-containing silicon layer and the top carbon-containing silicon layer including a top surface of the integrated circuit system.
12. The system as claimed in claim 11 wherein the silicon-carbon region includes the non-carbon-containing silicon layers in thin layers.
13. The system as claimed in claim 11 wherein the carbon-containing silicon layers include only silicon and carbon.
14. The system as claimed in claim 11 wherein the non-carbon-containing silicon layers include only silicon and substantially no carbon.
15. The system as claimed in claim 11 wherein the silicon-carbon region is substantially clean.
16. The system as claimed in claim 11 wherein:
the substrate is for integrated circuits;
the carbon-containing silicon layers are formed as an epitaxial layer on the substrate; and
the non-carbon-containing silicon layers are formed as an epitaxial layer.
17. The system as claimed in claim 16 wherein the carbon-containing silicon layers are substantially contiguous with the non-carbon-containing silicon layers.
18. The system as claimed in claim 16 wherein the silicon-carbon region includes the silicon-carbon region with over twenty-two hundredths of a percent carbon.
19. The system as claimed in claim 16 wherein the carbon-containing silicon layers include only carbon and silicon.
20. The system as claimed in claim 16 wherein the silicon-carbon region is formed into a single epitaxial film.