IP Library Granted Patent US 7,355,468
Granted Patent B2
US 7,355,468 · App. 11/473,519 · Granted Apr 8, 2008

Voltage generator circuit, method for providing an output voltage and electronic memory device

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,355,468
App. No.
11/473,519
Granted
Apr 8, 2008
Kind
B2
Abstract

A voltage generator circuit provides an output voltage that is higher than an input voltage. The voltage generator circuit includes an input terminal receiving the input voltage, and an output terminal providing the output voltage. A pre-charge element is coupled between the input terminal and the output terminal, and a capacitance circuit is coupled to the input terminal and to the output terminal.

Claims (67)

1. A voltage generator circuit providing an output voltage that is higher than an input voltage, the voltage generator circuit comprising:

an input terminal receiving the input voltage;

an output terminal providing the output voltage;

a pre-charge element coupled between the input terminal and the output terminal; and

a capacitance circuit coupled to the input terminal and to the output terminal, the capacitance circuit comprising:

a first capacitance;

a first capacitance current pass element coupled between the output terminal and a first node of the first capacitance;

a second capacitance;

a second capacitance current pass element being connected between the output terminal and a first node of the second capacitance;

a third capacitance, a first node of which being coupled to the output terminal; and

a current pass and pre-charge element controller provided such that in a pre-charge phase, the current pass elements and the pre-charge element are closed, and in a voltage shifting phase, the pre-charge element is opened,

wherein the capacitance current pass elements are controlled such that they are sequentially opened such that charge on the capacitances is transferred to a predetermined capacitance of the capacitance circuit, which then provides the output voltage, wherein, before a capacitance current pass element is opened, a respective capacitance, the first node of which is coupled to the capacitance current pass element to be opened, is provided with a boost voltage at its second node.

2. The voltage generator circuit of claim 1 , wherein the capacitance circuit further comprises:

at least a fourth capacitance; and

at least a third capacitance current pass element coupled between the output terminal and a first node of the fourth capacitance.

3. The voltage generator circuit of claim 1 , wherein the first, second, and third capacitances have substantially the same capacitance value.

4. The voltage generator circuit of claim 1 , wherein the first, second, and third capacitances do not all have the same capacitance values.

5. The voltage generator circuit of claim 1 , wherein the pre-charge element comprises a pre-charge switching element.

6. The voltage generator circuit of claim 1 , wherein the pre-charge element comprises at least one transistor.

7. The voltage generator circuit of claim 1 , wherein the pre-charge element comprises at least one of a field effect transistor, a transmission gate, or a diode.

8. The voltage generator circuit of claim 1 , wherein the pre-charge element comprises at least one metal oxide semiconductor field effect transistor.

9. The voltage generator circuit of claim 1 , wherein the pre-charge element comprises at least one p-channel metal oxide semiconductor field effect transistor.

10. The voltage generator circuit of claim 1 , wherein at least one of the capacitance current pass elements comprises a capacitance switching element.

11. The voltage generator circuit of claim 1 , at least one of the capacitance current pass elements comprises at least one of a transistor, a transmission gate, or a diode.

12. The voltage generator circuit of claim 1 , wherein at least one of the capacitance current pass elements comprises at least one field effect transistor.

13. The voltage generator circuit of claim 1 , wherein at least one of the capacitance current pass elements comprises at least one metal oxide semiconductor field effect transistor.

14. The voltage generator circuit of claim 1 , wherein at least one of the capacitance current pass elements comprises at least one p-channel metal oxide semiconductor field effect transistor.

15. The voltage generator circuit of claim 1 , further comprising:

a first level shifter circuit coupled between the current pass and pre-charge element controller and the first capacitance current pass element.

16. The voltage generator circuit of claim 1 , further comprising:

a second level shifter circuit coupled between the current pass and pre-charge element controller and the second capacitance current pass element.

17. The voltage generator of claim 1 , wherein the voltage generator is one component of an electronic memory device.

18. The voltage generator device of claim 17 , wherein the electronic memory device comprises a non-volatile memory device.

19. The voltage generator of claim 18 , wherein the electronic memory device comprises a non-volatile memory device being selected from the group of:

a flash non-volatile memory device;

a ferroelectric random access memory non-volatile memory device;

a magnetic random access memory non-volatile memory device;

a phase change memory non-volatile memory device;

a conductive bridging random access memory non-volatile memory device; and

an organic random access memory non-volatile memory device.

20. The voltage generator of claim 17 , wherein the electronic memory device comprises a floating gate flash non-volatile memory device or a charge-trapping layer flash non-volatile memory device.

21. The voltage generator of claim 20 , wherein the electronic memory device comprises a nitride read only memory flash non-volatile memory device.

22. A voltage generator circuit providing an output voltage that is higher than an input voltage, the voltage generator circuit comprising:

an input terminal receiving the input voltage;

an output terminal providing the output voltage;

a pre-charge switching element coupled between the input terminal and the output terminal; and

a capacitance circuit coupled to the input terminal and to the output terminal, the capacitance circuit comprising:

a first capacitance;

a first capacitance switching element coupled between the output terminal and a first node of the first capacitance;

a second capacitance;

a second capacitance switching element coupled between the output terminal and a first node of the second capacitance;

a third capacitance, a first node of which is coupled to the output terminal; and

a switching element controller provided such that in a pre-charge phase, the switching elements are closed, and in a voltage shifting phase, the pre-charge switching element is opened,

wherein the capacitance switching elements are controlled such that they are sequentially opened such that charge on the capacitances is transferred to a predetermined capacitance of the capacitance circuit, which then provides the output voltage, wherein, before a capacitance switching element is opened, a respective capacitance, the first node of which is coupled to the capacitance switching element to be opened, is provided with a boost voltage at its second node.

23. A method of providing an output voltage that is higher than a received input voltage, the method comprising:

providing a voltage generator circuit, the voltage generator circuit comprising:

an input terminal receiving the input voltage;

an output terminal providing the output voltage;

a pre-charge element coupled between the input terminal and the output terminal;

a capacitance circuit coupled to the input terminal and to the output terminal, comprising:

a first capacitance;

a first capacitance current pass element coupled between the output terminal and a first node of the first capacitance;

a second capacitance;

a second capacitance current pass element coupled between the output terminal and a first node of the second capacitance;

a third capacitance, a first node of which is coupled to the output terminal, closing each of the current pass elements and the pre-charge element, thereby pre-charging the capacitances with the input voltage;

opening the pre-charge element; and

sequentially opening the capacitance current pass elements such that charge on the capacitances is transferred to a predetermined capacitance of the capacitance circuit, which then provides the output voltage, wherein, before a capacitance current pass element is opened, a respective capacitance, the first node of which is coupled to the capacitance current pass element to be opened, is provided with a boost voltage at its second node.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 28, 2015
From: INFINEON TECHNOLOGIES AG
To: POLARIS INNOVATIONS LIMITED
Reel/Frame 036701/0926 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 8, 2015
From: QIMONDA AG
To: INFINEON TECHNOLOGIES AG
Reel/Frame 035623/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 14, 2010
From: INFINEON TECHNOLOGIES FLASH GMBH & CO. KG
To: QIMONDA AG
Reel/Frame 023806/0393 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 19, 2006
From: DE AMBROGGI, LUCA; CURATOLO, GIACOMO
To: INFINEON TECHNOLOGIES FLASH GMBH & CO. KG
Reel/Frame 018270/0675 →