IP Library Granted Patent US 7,567,343
Granted Patent B2
US 7,567,343 · App. 11/500,421 · Granted Jul 28, 2009

Method and apparatus for detecting defects on a wafer

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Quick Facts
Patent No.
US 7,567,343
App. No.
11/500,421
Granted
Jul 28, 2009
Kind
B2
Abstract

As circuit patterns become finer in recent years, improvement in detection sensitivity of defects is required. To answer this, sensitivity is being enhanced using a laser with a wavelength of the UV band as the laser for irradiation. A pulse oscillation laser is often used as the UV laser. However, a peak (maximum output) of the pulse oscillation laser becomes very large to an average output power required. For example, in the case of a laser of average output power 2 W, pulse interval 10 ns, and pulse width 10 ps, the peak (maximum output) becomes as high as 2 kW, and there is the possibility of causing a damage to a sample. Therefore, it is necessary to reduce the peak (maximum output) with the average output power being maintained, so that it may not cause a damage to the sample. In this invention, the device is configured in such a way that pulsed light is optically divided into several pulses and these pulses are given respective paths whose lengths are set different from one another, whereby the peak (maximum output) is reduced while the average output value are maintained.

Claims (26)

1. An apparatus for detecting defects, comprising:

a laser-beam light source which emits an ultraviolet pulsed laser beam;

an irradiation optical unit which expands a diameter of the ultraviolet pulsed laser beam with a beam expander, converts a shape of the ultraviolet pulsed laser beam to be converged in one direction and collimated in another direction with a cylindrical lens and obliquely irradiates a linear area of a specimen;

a detection optical unit that forms an optical image by a light reflected from the linear area of the specimen irradiated by the irradiation optical unit and picks up the formed optical image with an image sensor; and

a signal processing unit which processes the optical image obtained with the image sensor to detect defects of the specimen, including defects having sizes less than 0.1 μm;

wherein the irradiation optical unit divides the ultraviolet pulsed laser beam emitted from the laser beam light source into a plurality of pulses and converts the shape of the plurality of pulses, using the cylindrical lens, to irradiate the linear area on the specimen.

2. The apparatus for detecting defects according to claim 1 , wherein

the irradiation optical unit divides each pulse of the ultraviolet pulsed laser beam emitted from the laser-beam light source and passed through the beam expander into a plurality of pulses, transforms the plurality of pulses divided from the ultraviolet pulsed laser beam into a plurality of beams of linearly polarized light, converts the shape of the plurality of linearly-polarized ultraviolet pulsed laser beams by a cylindrical lens and obliquely irradiates the linear area on the specimen.

3. The apparatus for detecting defects according to claim 1 , wherein

the detection optical unit has a spatial filter for shading scattered light from a pattern formed on the specimen irradiated with the plurality of pulses divided from the ultraviolet pulsed laser beam.

4. The apparatus for detecting defects according to claim 1 , wherein

the irradiation optical unit divides each pulse of the ultraviolet pulsed laser beam emitted from the laser-beam light source into a plurality of pulses whose peak levels are almost equal.

5. A method for detecting defects, comprising the steps of:

emitting an ultraviolet pulsed laser beam from a laser beam light source;

expanding the diameter of the ultraviolet pulsed laser beam with a beam expander;

obliquely illuminating a specimen with the ultraviolet pulsed laser beam emitted from the pulsed laser beam light source

detecting light reflected light from the specimen with an image sensor; and

detecting defects of the sample, including defects having sizes less than 0.1 μm, by processing a signal obtained by detecting the light reflected light from the specimen;

wherein each pulse of the ultraviolet pulsed laser beam emitted from the laser beam light source is divided into a plurality of pulses, and the plurality of pulses divided from the ultraviolet pulsed laser beam are converted in shape to be converged in one direction and collimated in another direction by using a cylindrical lens to illuminate a linear area on the specimen.

6. The method for detecting defects according to claim 5 , wherein

the specimen is illuminated while being rotated.

7. The method for detecting defects according to claim 5 , wherein

during the step of detecting light, the light reflected from a pattern formed on the sample among reflected light from the sample irradiated obliquely with the pulsed laser beam is shaded with shading means, and

the reflected light from the sample that has not been shaded with the shading means is detected.

8. The method for detecting defects according to claim 5 , wherein during the step of obliquely illuminating,

each pulse of the pulsed laser beam emitted from the laser beam light source is divided into a plurality of pulses whose peak levels are almost equal.

Assignments (3)
CHANGE OF NAME AND ADDRESS Recorded Mar 30, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052259/0227 →
RE-RECORD TO CORRECT THE ADDRESS OF THE ASSIGNEE, PREVIOUSLY RECORDED ON REEL 018172 FRAME 0631. Recorded Aug 13, 2009
From: OHSHIMA, YOSHIMASA; UTO, SACHIO; SHIBATA, YUKIHIRO
To: HITACHI HIGH-TECHNOLOGIES CORPORATION
Reel/Frame 023086/0040 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 8, 2006
From: OHSHIMA, YOSHIMASA; UTO, SACHIO; SHIBATA, YUKIHIRO
To: HITACHI HIGH-TECHNOLOGIES CORPORATION
Reel/Frame 018172/0631 →