Image sensor with a reflective waveguide
View Patent ↗An image sensor having shield structures and methods of forming the same are provided. Generally, the image sensor includes: (i) substrate having at least one photosensitive element formed therein; (ii) a dielectric layer overlying the substrate and the photosensitive element; and (iii) an annular reflective waveguide disposed in the dielectric layer above the photosensitive element to reduce cross-talk between adjacent elements of the sensor while increasing sensitivity of the sensor. In certain embodiments, the sensor further includes a photoshield disposed in the dielectric above the photosensitive element and about the waveguide to further reduce the possibility of cross-talk. Other embodiments are also disclosed.
1. An image sensor comprising:
a substrate having a surface with a plurality of pixels, the plurality of pixels comprising a pitch between each of the plurality of pixels parallel to the surface of the substrate selected to match a wavelength of light incident on the image sensor;
a dielectric layer formed on the surface of the substrate; and
a plurality of annular reflective waveguides each overlying one of the plurality of pixels and extending perpendicularly from the surface of the substrate through the dielectric layer to a top surface thereof, wherein each of the plurality of annular reflective waveguides comprise a cross-sectional dimension parallel to the surface of the substrate selected to match the wavelength of light incident on the image sensor.
2. An image sensor according to claim 1 , wherein each of the plurality of pixels comprise a dimension parallel to the surface of the substrate selected to match the wavelength of light incident on the image sensor.
3. An image sensor according to claim 1 , wherein each of the plurality of annular reflective waveguides comprises a plurality of individual intersecting walls.
4. An image sensor according to claim 3 , wherein the plurality of individual intersecting walls of each of the plurality of annular reflective waveguides are formed in trenches disposed about a center of one of the plurality of pixels.
5. An image sensor according to claim 1 , further comprising a photoshield disposed on the top surface of the dielectric layer above and about at least one of the plurality of pixels.
6. An image sensor according to claim 5 , wherein the photoshield extends from the at least one of the plurality of pixels to an adjacent pixel.
7. An image sensor according to claim 5 , wherein the photoshield and the plurality of annular reflective waveguides comprise one or more materials selected from the group consisting of Titanium (Ti), Titanium-Nitride (TiN), Tungsten (W) and Tungsten-Nitride (WN).
8. An image sensor comprising:
a substrate having a surface with at least one photosensitive element formed therein;
a dielectric layer formed on the surface of substrate;
an annular reflective waveguide overlying the at least one photosensitive element, the annular reflective waveguide extending perpendicularly from the surface of the substrate through the dielectric layer to a top surface thereof; and
wherein the reflective waveguide comprises a cross-sectional dimension parallel to the surface of the substrate selected to match a wavelength of light incident on the image sensor.
9. An image sensor according to claim 8 , wherein the cross-sectional dimension of the reflective waveguide is substantially uniform from the surface of the substrate through the dielectric layer to the top surface thereof.
10. An image sensor according to claim 8 , wherein the reflective waveguide extends perpendicularly from the surface of the substrate through the dielectric layer to the top surface thereof.
11. An image sensor according to claim 8 , wherein the reflective waveguide comprises a plurality of individual intersecting walls.
12. An image sensor according to claim 11 , wherein each of the plurality of individual intersecting walls are formed in trenches disposed about a center of the at least one photosensitive element.
13. An image sensor according to claim 8 , further comprising a photoshield disposed on the top surface of the dielectric layer above and about the at least one photosensitive element.
14. An image sensor according to claim 8 , wherein the reflective waveguide comprises one or more materials selected from the group consisting of Titanium (Ti), Titanium-Nitride (TiN), Tungsten (W) and Tungsten-Nitride (WN).
15. An image sensor comprising:
a substrate having a surface with a plurality of pixels formed therein, each of the plurality of pixels comprising a dimension parallel to the surface of the substrate selected to match a wavelength of light incident on the image sensor;
a dielectric layer formed on the surface of substrate; and
a plurality of reflective waveguides extending from the surface of the substrate through the dielectric layer to a top surface thereof, each of the plurality of reflective waveguides overlying and in alignment with one of the plurality of pixels and each comprising a cross-sectional dimension parallel to the surface of the substrate selected to match the wavelength of light incident on the image sensor.
16. An image sensor according to claim 15 , wherein the plurality of pixels comprise a pitch parallel to the surface of the substrate between each of the plurality of pixels selected to match the wavelength of light incident on the image sensor.
17. An image sensor according to claim 15 , wherein the cross-sectional dimension of each of the plurality of reflective waveguides is substantially uniform from the surface of the substrate through the dielectric layer to the top surface of the dielectric layer.
18. An image sensor according to claim 17 , wherein each of the plurality of reflective waveguides comprises a plurality of individual intersecting walls.
19. An image sensor according to claim 18 , wherein the plurality of individual intersecting walls of each of the plurality of annular reflective waveguides are formed in trenches disposed about a center of one of the plurality of pixels.
20. An image sensor according to claim 15 , further comprising a photoshield disposed on the top surface of the dielectric layer above and about the at least one of the plurality of pixels.