Structure combining an IC integrated substrate and a carrier, and method of manufacturing such structure
The present invention provides a structure combining an IC integrated substrate and a carrier, which comprises a carrier and an IC integrated substrate formed on the carrier. The interface between the IC integrated substrate and the carrier has a specific area at which the interface adhesion is different from that at the remaining area of the interface. The present invention also provides a method of manufacturing the above structure and a method of manufacturing electronic devices using the above structure.
1. A structure combining an IC integrated substrate and a carrier, comprising: a carrier; and an IC integrated substrate formed on the carrier, wherein an interface between the carrier and the IC integrated substrate has a specific area at which the interface adhesion is different from that at remaining area of the interface, and wherein the IC integrated substrate comprises a multi-layer interconnection structure arranged corresponding to the remaining area of the interface.
2. The structure as described in claim 1 , wherein the interface adhesion at the specific area is stronger than that at the remaining area.
3. The structure as described in claim 1 , wherein the specific area is a peripheral region of the carrier.
4. The structure as described in claim 1 , wherein the specific area is in a form of spots.
5. The structure as described in claim 1 , wherein the specific area is in a form of grids.
6. A structure combining an IC integrated substrate and a carrier, comprising: a carrier; and an IC integrated substrate formed on the carrier, wherein an interface between the carrier and the IC integrated substrate has a specific area at which the interface adhesion is different from that at remaining area of the interface, and wherein the IC integrated substrate comprises at least one semiconductor device arranged corresponding to the remaining area of the interface.
7. The structure as described in claim 6 , wherein the interface adhesion at the specific area is stronger than that at the remaining area.
8. The structure as described in claim 6 , wherein the specific area is a peripheral region of the carrier.
9. The structure as described in claim 6 , wherein the specific area is in a form of spots.
10. The structure as described in claim 6 , wherein the specific area is in a form of grids.
11. The structure as described in claim 6 , wherein the semiconductor device is disposed inside the IC integrated substrate.