Optical semiconductor device and method of manufacturing the same
View Patent ↗An optical semiconductor device of which the moisture resistance and the like are improved and the manufacturing method thereof are provided. An optical semiconductor device of the embodiment is configured to include an optical semiconductor element on a surface of which a circuit portion including a light-receiving or light-emitting element is formed; a terminal portion which is provided on a back of the optical semiconductor element and electrically connected with the circuit portion; a covering layer which covers the surface of the optical semiconductor element and is made of a transparent material; and sealing resin which covers side faces of the covering layer and of the optical semiconductor element. The circuit portion and the terminal portion may be connected by a rewiring pattern.
1. A semiconductor device, comprising:
a semiconductor element;
a first conductive electrode, wherein the first conductive electrode is electrically connected to a circuit on a front surface of the semiconductor element;
a penetrating region extending from the front surface to a back surface of the semiconductor element in a manner substantially perpendicular to the front and back surfaces of the semiconductor element, wherein the penetrating region is over the first conductive electrode;
a second conductive electrode inside the penetrating region and electrically connected to the first conductive electrode;
a transparent cover on the front surface of the semiconductor element, wherein a side surface of the transparent cover and a side surface of the semiconductor element are on the same plane; and
a sealing resin, wherein the resin covers and is in direct contact with the side surface of the semiconductor element and the side surface of the transparent cover and a thickness of the sealing resin in direct contact with the side surface of the semiconductor element is greater than a thickness of the sealing resin in direct contact with the side surface of the transparent cover.
2. The device of claim 1 wherein the second conductive electrode is connected to a terminal portion on the back surface of the semiconductor element.
3. The device of claim 1 further comprising adhesive resin between the semiconductor element and the cover.
4. The device of claim 1 wherein the second conductive electrode comprises a conductive material.
5. A semiconductor device, comprising:
a semiconductor element;
a circuit on a front surface of the semiconductor element, wherein the circuit includes at least one of a light receiving element and a light emitting element;
a first conductive electrode on the front surface of the semiconductor element and electrically connected to the circuit;
a penetrating region extending from the front surface to a back surface of the semiconductor element in a manner substantially perpendicular to the front and back surfaces of the semiconductor element, wherein the penetrating region is over the first conductive electrode;
a second conductive electrode inside the penetrating region and electrically connected to the first conductive electrode;
a transparent cover on the front surface of the semiconductor element, wherein a side surface of the transparent cover and a side surface of the semiconductor element are on the same plane; and
a sealing resin, wherein the resin covers and is in direct contact with the side surface of the semiconductor element and the side surface of the transparent cover and a thickness of the sealing resin in direct contact with the side surface of the semiconductor element is greater than a thickness of the sealing resin in direct contact with the side surface of the transparent cover.
6. The device of claim 5 wherein the second conductive electrode is connected to a terminal portion on the back surface of the semiconductor element.
7. The device of claim 5 further comprising adhesive resin between the semiconductor element and the cover.
8. The device of claim 5 wherein the second conductive electrode comprises a conductive material.
9. The device of claim 1 wherein a front surface of the transparent cover and a front surface of the sealing resin are in the same plane.
10. The device of claim 5 wherein a front surface of the transparent cover and a front surface of the sealing resin are in the same plane.
11. The device of claim 1 further comprising an insulating layer between and in contact with both the sealing resin and the back surface of the semiconductor element.
12. The device of claim 5 further comprising an insulating layer between and in contact with both the sealing resin and the back surface of the semiconductor element.
13. The device of claim 1 wherein the sealing resin covers the back surface of the semiconductor element.
14. The device of claim 1 wherein the sealing resin is in direct contact with the side surface of the semiconductor element and the side surface of the transparent cover.
15. The device of claim 5 wherein the sealing resin covers the back surface of the semiconductor element.
16. The device of claim 5 wherein the sealing resin is in direct contact with the side surface of the semiconductor element and the side surface of the transparent cover.
17. The device of claim 11 further comprising a terminal portion electrically connected to the second conductive electrode, the terminal portion extending from the back surface of the semiconductor element through the insulating layer and the sealing resin.
18. The device of claim 12 further comprising a terminal portion electrically connected to the second conductive electrode, the terminal portion extending from the back surface of the semiconductor element through the insulating layer and the sealing resin.