Method for phased garbage collection with state indicators

1. A method of operating a nonvolatile memory, comprising:

allocating a first memory block of the nonvolatile memory comprising a first logical group and a first buffer portion;

receiving a memory write command and writing data of the memory write command to a second buffer portion of a second memory block of the nonvolatile memory;

performing at least a portion of a garbage collection of a second logical group;

opening an update block for the first logical group;

performing a phased garbage collection of the first logical group;

indicating that the buffer portion is available using a first intact state;

indicating that the memory block is full using a second intact state; and

indicating that a first phase of the phased garbage collection is completed using a half full state.

2. The method of claim 1 , further comprising converting the memory block to an intact block after performing the phased garbage collection.

3. The method of claim 1 , further comprising compacting the memory block if the memory block comprises invalid data.

4. The method of claim 1 , further comprising allocating a reserve buffer portion of the memory block to store another memory write received before the second memory write command.

5. A method of operating a nonvolatile memory, comprising:

allocating a memory block of the nonvolatile memory comprising a logical group and a buffer portion and indicating that the memory block is in a sequential update state;

performing a first phase of garbage collection and indicating that the memory block is in a half full state;

performing a second phase of garbage collection and indicating that the memory block is in a first state; and

writing a memory write of a memory write command to the buffer portion and indicating that the memory blocks is in a second intact state.

6. The method of claim 5 , further comprising:

asserting a first timeout period before the performing the first phase of garbage collection; and

asserting a second timeout period before the performing the second phase of garbage collection.

7. The method of claim 6 ,

wherein the asserting the first timeout period is in response to receiving another memory write command; and

wherein the asserting the second timeout period is in response to receiving the memory write command.

8. The method of claim 5 , wherein the indicating that the memory block is in a first intact state comprises indicating that the buffer portion may be written to.

9. The method of claim 5 , wherein the indicating that the memory block is in a second intact comprises indicating that no more data may be written to the memory block.

10. The method of claim 5 , further comprising:

receiving another memory write updating the memory block when the memory block is in the sequential update state; and

indicating that the memory block is in a chaotic update state.

11. The method of claim 10 , further comprising:

compacting the memory block; and

indicating that the memory block is in the sequential update state.

12. A method of operating a nonvolatile memory comprising:

allocating a memory block of the nonvolatile memory comprising a logical group and a buffer portion;

receiving a first memory write command including a first memory write to update an original block and copying the memory write to the memory block;

asserting a first timeout period in response to the receiving the first memory write and asserting a busy signal to notify a memory host of the first timeout period;

performing a first phase of a garbage collection of the memory block;

receiving a second memory write command including a second memory write to update the memory block;

asserting a second timeout period in response to the receiving the second memory write and asserting the busy signal to notify a memory host of the second timeout period;

performing a second phase of the garbage collection of the memory block; and

writing the second memory write to the buffer portion;

indicating that the memory block is in a sequential update state in response to the receiving the first memory write;

indicating that the memory block is in a half full state in response to the performing the first phase of the garbage collection;

indicating that the memory block is in a first intact state in response to the performing the second phase of the garbage collection; and

indicating that the memory block is in a second intact state in response to the writing the second memory write.

13. The method of claim 12 , wherein the indicating that the memory block is in a first intact state comprises indicating that the buffer portion may be written to.

14. The method of claim 12 , wherein the indicating that the memory block is in a second intact state comprises indicating that no more data may be written to the memory block.

15. The method of claim 12 , further comprising compacting the memory block after receiving the first memory write command if the memory block has invalid data.