Focused ion beam processing method
View Patent ↗There is provided a focused ion beam processing method in which damage to a workpiece is minimized when the surface of the workpiece is irradiated and processed with an ion beam. The method comprises the steps of: generating an acceleration voltage between an ion source and a workpiece; focusing an ion beam emitted from the ion source; and applying the ion beam to a predetermined process position to process the surface of the workpiece. In this process, the energy level of the ion beam produced by the acceleration voltage is set within a range from at least 1 keV to less than 20 keV.
1. A focused ion beam processing method comprising the steps of:
generating an acceleration voltage between an ion source and a workpiece;
focusing an ion beam emitted from the ion source and
applying the ion beam to a predetermined portion to be processed on the surface of the workpiece,
wherein the workpiece is a reflective mask that includes a reflective layer, an interference layer on the reflective layer and an absorption layer patterned on the interference layer, and reflects and transfers irradiation light applied to portions other than the portions on which the absorption layer is patterned, and the absorption layer is repaired.
2. The focused ion beam processing method according to claim 1 , wherein while the ion beam is applied to the predetermined portion, an assist gas is sprayed thereto.
3. The focused ion beam processing method according to claim 1 , wherein the method further comprises the step of, after the predetermined portion is irradiated with the ion beam, washing a damaged portion of the workpiece into which ions of the ion beam has penetrated.
4. The focused ion beam processing method according to claim 1 , wherein the workpiece is a transmissive photomask that includes a transmissive layer and a light-blocking layer patterned on the transmissive layer, and transmits and transfers irradiation light applied to portions other than the portions on which the light-blocking layer is patterned, and the light-blocking layer is repaired.
5. The focused ion beam processing method according to claim 4 , wherein the wavelength of the irradiation light with which the workpiece is irradiated and transferred is from at least 13.5 nm to less than 248 nm.
6. A focused ion beam processing method comprising the steps of:
generating an acceleration voltage between an ion source and a workpiece;
focusing an ion beam emitted from the ion source and
applying the ion beam to a predetermined portion to be processed on the surface of the workpiece,
wherein the energy level of the ion beam produced by the acceleration voltage is set within a range from at least 1 keV to less than 20 keV, and
wherein the workpiece is a reflective mask that includes a reflective layer, an interference layer on the reflective layer and an absorption layer patterned on the interference layer, and reflects and transfers irradiation light applied to portions other than the portions on which the absorption layer is patterned, and the absorption layer is repaired.
7. The focused ion beam processing method according to claim 6 , wherein while the ion beam is applied to the predetermined portion, an assist gas is sprayed thereto.
8. The focused ion beam processing method according to claim 6 , wherein the method further comprises the step of, after the predetermined portion is irradiated with the ion beam, washing a damaged portion of the workpiece into which ions of the ion beam has penetrated.
9. The focused ion beam processing method according to claim 6 , wherein the workpiece is a transmissive photomask that includes a transmissive layer and a light-blocking layer patterned on the transmissive layer, and transmits and transfers irradiation light applied to portions other than the portions on which the light-blocking layer is patterned, and the light-blocking layer is repaired.
10. The focused ion beam processing method according to claim 9 , wherein the wavelength of the irradiation light with which the workpiece is irradiated and transferred is from at least 13.5 nm to less than 248 nm.