Semiconductor package structure having enhanced thermal dissipation characteristics
View Patent ↗In an exemplary embodiment, a packaged device having enhanced thermal dissipation characteristics includes a semiconductor chip having a major current carrying or heat generating electrode. The semiconductor chip is oriented so that the major current carrying electrode faces the top of the package or away from the next level of assembly. The packaged device further includes a conductive clip for coupling the major current carrying electrode to a next level of assembly, and a heat spreader device formed on or integral with the conductive clip. A portion of the heat spreader device may be optionally exposed.
1. A semiconductor package having enhanced thermal dissipation comprising:
a lead frame including a terminal portion;
a first semiconductor device having a first electrode on a surface;
a conductive clip having first and second opposed major surfaces, wherein the first major surface is coupled to the first electrode, and wherein the conductive clip is further coupled to the terminal portion;
a second semiconductor device coupled to the second major surface of the conductive clip and overlying at least a portion of the first semiconductor device;
a thermally conductive device coupled to the second major surface of the conductive clip and having a portion that spans to overlie at least a portion of the second semiconductor device; and
an encapsulating layer covering the semiconductor package including at least a portion of the thermally conductive device.
2. The package of claim 1 , wherein the first semiconductor device comprises a MOSFET.
3. The package of claim 1 , wherein the second semiconductor device comprises a Schottky device.
4. The package of claim 1 , wherein the encapsulating layer comprises a material having a thermal conductivity greater than or equal to about 3.0 Watts/mK.
5. The package of claim 1 , wherein the package is configured as a leadless package.